Micro-prober for wafer-level low-noise measurements in MOS devices

Low-frequency noise measurements represent an interesting investigation technique for the characterization of the quality and reliability of microelectronic materials and devices. Performing meaningful noise measurements at low and very low (f<1 Hz) frequencies, however, may be quite challenging, particularly because of the many sources of interference that superimpose on the noise signal. For this reason, packaged samples are preferred because they allow accurate shielding from the external environment, and because keeping the sample in close proximity to the low-noise biasing system and amplifier reduces microphonic and electromagnetic disturbances. Notwithstanding this, the possibility of performing low-frequency noise measurements at wafer level would be quite interesting, both because of the ease of obtaining wafer-level samples from industries with respect to packaged samples, and because this would avoid possible packaging-process induced device degradation. The purpose of this work is to demonstrate that it is, in fact, possible to design and build a dedicated probe system for performing high-sensitivity, low-frequency noise measurements on metal-oxide-semiconductor devices at wafer level.     

Effect of film thickness on hydrogen content in a-Si : H

The hydrogen content, its depth distribution, and its bonding configuration have been studied in hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapor deposition with hydrogen-diluted silane. Nuclear reaction analysis and infrared spectroscopy were used to determine the total amount of hydrogen and its bonded component, respectively. It has been established that the total concentration of hydrogen does not depend on the film thickness, and has a uniform depth profile. The concentration of bonded hydrogen changes with the film thickness within the measurement accuracy. The data obtained suggest the presence of molecular (non-bonded) hydrogen, uniformly distributed in concentration across the film thickness.     

Lateral ion implant straggle and mask proximity effect

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.     

A New Hand-Held Microsystem Architecture for Biological Analysis

This paper presents a hand-held microsystem based on new fully integrated magnetoresistive biochips for biomolecular recognition (DNA hybridization, antibody antigen interaction, etc.). Magnetoresistive chip surfaces are chemically treated, enabling the immobilization of probe biomolecules such as DNA or antibodies. Fluid handling is also integrated in the biochip. The proposed microsystem not only integrates the biochip, which is an array of 16times16 magnetoresistive sensors, but it also provides all the electronic circuitry for addressing and reading out each transducer. The proposed architecture and circuits were specifically designed for achieving a compact, programmable and portable microsystem. The microsystem also integrates a hand-held analyzer connected through a wireless channel. A prototype of the system was already developed and detection of magnetic nanoparticles was obtained. This indicates that the system may be used for magnetic label based bioassays     

A power-driven multiplication instruction-set design method for ASIPs

This paper presents a novel power-driven multiplication instruction-set design method for application-specific instruction-set processors (ASIPs). Based on a dual-and-configurable-multiplier structure, our proposed method devises a multiplication instruction set for low-power ASIPs. Our method exploits the execution sequences of multiplication instructions and effective bit widths of variables to reduce power consumed by redundant multiplication bits while minimizing the multiplication execution time. Experimental results on a set of DSP programs demonstrate that our proposed method achieves significant power reduction (up to 18.53%) and execution time improvement (up to 10.43%) with 18% area overhead.     

A New Comb Circular Polarizer Suitable for Millimeter‐Band Application

This letter presents a new polarizer which has a simple comb structure inside a circular waveguide. The electrical performance of the proposed comb polarizer is optimized by a circular waveguide radius and by the physical parameters of the comb plates. This polarizer is suitable for providing good performance in millimeter‐band application because of its simple structure and low fabrication cost. In our experiments the dual‐band comb polarizer designed in band 1(K) and band 2(Ka) showed good electrical performance without any tuning elements.     

Performance of thermostatic and electronic valves controlling the compressor capacity

The performance of the energy consumption of an electronic valve and a classical thermostatic valve has been compared when these expansion valves are adopted in a vapour compression plant subjected to a cold store. The main aim is to verify experimentally which type of expansion valve would be preferable from energy point of view when a classical thermostat or a fuzzy logic algorithm are used as the control system for the refrigeration capacity. The fuzzy logic‐based control is able to modulate continuously the compressor speed through an inverter. The results show that with a fuzzy algorithm, the thermostatic expansion valve allows an energy saving of about 8% in comparison with the electronic valve. When on–off control is used, the electric energy consumption obtained both with the electronic valve and with the thermostatic valve is comparable. Copyright © 2006 John Wiley & Sons, Ltd.     

Quasi-static stress fields for a crack inclined to the property gradation in functionally graded materials

Summary.  Quasi-static stress fields for a crack inclined to the direction of property gradation in functionally graded materials (FGMs) are obtained through an asymptotic analysis coupled with Westergaard's stress function approach. The elastic modulus of the FGM is assumed to vary exponentially along the gradation direction. The mode mixity due to the inclination of the property gradient is accommodated in the analysis through superposition of opening and shear modes. The first four terms in the expansion of the stress field are derived to explicitly bring out the influence of nonhomogeneity on the structure of the stress field. Using these stress field contours of constant maximum shear stress, constant maximum principal stress, constant first stress invariant and constant out of plane displacement are generated, and the effect of inclination of the property gradation direction on these contours is discussed. Received September 22, 2002 Published online: May 20, 2003 The financial support of National Science Foundation (NSF) under grant no. CMS 99000138 is gratefully acknowledged.