On the reliability of computer predictions of the geomechanical behaviour of rock-salt

Geomechanical aspects of the storage of radioactive waste in salt formations have been studied extensively using finite element methods over the last 20 years. In consequence a range of computer programs and associated modelling techniques have been assembled. The paper is based on a benchmark exercise to compare the predictive abilities of a number of these programs and highlights the difficulties of making reliable a-priori estimates of long term behaviour.     

Wear in check valves due to flow induced motion

Experiments showing the frequency and amplitude of the flow induced motion of the gate for a 2- and a 4-in. swing check valve have been performed. The gate motion is due to turbulence in approach flow. We have found the dominant turbulent frequency of the approach flow is about half the natural frequency of the valves. The valves appear to be almost critically damped. Because of this, the valves respond almost as they would to a static force of the magnitude characteristic of the turbulent fluctuation in the flow. Both the dimensionless exciting force and the damping ratio have been found to be independent of valve size so the above statements are true for larger valves also. The recommended valve oscillation amplitudes and frequencies are used to calculate the wear at the shaft and at the stop. For an unpegged check valve, such as one of the 10-in. valves which was used at the San Onofre Nuclear Generation Station, it was found that shaft bearing wear would amount to 0.27 in.³/year and stop wear to 0.03 in.³/year.     

A systematic techno-economic assessment of a WEC system installation for low-cost electrification of a habitable dwelling

This paper deals with the technical feasibility and economic viability of a grid connected wind-energy conversion system (WECS) used to cover the energy demand of an average habitable dwelling. The various parts of the wind-energy system are described and the useful electrical energy production is determined using a simulation program based on the Monte Carlo method. An economic analysis of the WEC system is performed using a computerized assessment tool. Important financial indices are calculated and financial scenarios investigated.     

Changes in Lake Ontario Total Phosphorus Concentrations 1976–1978

An apparent decrease in total phosphorus concentrations of approximately 4.l μgP/L has been reported recently for the spring values of 1977 and 1978 in Lake Ontario. Investigation of the loading reduction for this period independent of sedimentation factors can account for only 10% of the change. The results indicate that changes in the sedimentation rate of total phosphorus during this period offer an explanation for the majority of the change in concentration.     

Fast algorithms for estimating the correlation functions of large signals

A fast algorithm is proposed for estimating the auto- and cross-correlation functions of a large signal. The algorithm is based on the sectioning method by the fast Fourier transform. We determine the optimal length of the portion of data read from external memory into RAM which achieves T_min—a minimum processing time. An estimate of T_min is obtained.Translated from Kibernetika, No. 3, pp. 78–81, May–June, 1991.     

Performance engineering and topological design of metro WDM opticalnetworks using computer simulation

This paper demonstrates the use of computer simulation for topological design and performance engineering of transparent wavelength-division multiplexing metropolitan-area networks. Engineering of these networks involves the study of various transport-layer impairments such as amplifier noise, component ripple, chirp/dispersion, optical crosstalk, waveform distortion due to filter concatenation, fiber nonlinearities, and polarization effects. A computer simulation methodology composed of three main simulation steps is derived and implemented. This methodology obtains performance estimations by applying efficient wavelength-domain simulations on the entire network topology, followed by time-/frequency-domain simulations on selected paths of the network and finally Q-budgeting on an identified worst case path. The above technique provides an efficient tool for topological design and network performance engineering. Accurate simulation models are presented for each of the performance impairments, and the computer simulation methodology is used for the design and engineering of a number of actual metro network architectures     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.