首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   265198篇
  免费   4809篇
  国内免费   1586篇
电工技术   5037篇
技术理论   1篇
综合类   1099篇
化学工业   39553篇
金属工艺   8889篇
机械仪表   8103篇
建筑科学   7679篇
矿业工程   912篇
能源动力   7610篇
轻工业   29564篇
水利工程   2358篇
石油天然气   2520篇
武器工业   92篇
无线电   34828篇
一般工业技术   47919篇
冶金工业   47058篇
原子能技术   3520篇
自动化技术   24851篇
  2022年   1356篇
  2021年   2311篇
  2020年   1775篇
  2019年   2000篇
  2018年   2966篇
  2017年   3036篇
  2016年   3244篇
  2015年   2661篇
  2014年   4289篇
  2013年   12757篇
  2012年   7524篇
  2011年   10432篇
  2010年   8192篇
  2009年   9065篇
  2008年   9546篇
  2007年   9619篇
  2006年   8958篇
  2005年   8044篇
  2004年   7608篇
  2003年   7536篇
  2002年   7114篇
  2001年   7440篇
  2000年   6671篇
  1999年   7182篇
  1998年   16688篇
  1997年   11643篇
  1996年   8812篇
  1995年   6727篇
  1994年   5862篇
  1993年   5676篇
  1992年   4091篇
  1991年   3853篇
  1990年   3605篇
  1989年   3414篇
  1988年   3312篇
  1987年   2608篇
  1986年   2515篇
  1985年   3164篇
  1984年   2811篇
  1983年   2565篇
  1982年   2353篇
  1981年   2397篇
  1980年   2213篇
  1979年   2052篇
  1978年   1880篇
  1977年   2177篇
  1976年   2728篇
  1975年   1585篇
  1974年   1489篇
  1973年   1559篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
991.
The device degradation under ac and dc stress have been discussed and a relationship between the two has been established,. We have shown that the commonly used lifetime criteria of 10% linear current degradation for 10 years for a transistor under dc stress is overly conservative for representing the circuit operating lifetime. Using experimental and simulated data for inverter chains, we proposed that a meaningful equivalent lifetime based on 10% Idl degradation under dc stress is 1 year lifetime (for a 10 year circuit lifetime based on 54b degradation in ring oscillator frequency). We also compared this criteria to actual circuit degradation for microprocessors and a DRAM. For DSP microprocessors with 0.8 μm LDD transistors, the projected lifetime was more than 200 years at 5.5 V, with a corresponding 10% I dr lifetime of 20 years. For 1 Mb DRAMs with 1 pm LDD transistors, the 5% speed degradation lifetime at 5.5 V was more than 100 years, whereas the individual transistors had 10% Idl lifetime of 4 years. These circuit results support the 10% Idl transistor lifetime. We believe these criterion should be very safe and reasonable for digital IC chips currently in the field, as well as those in future design and development  相似文献   
992.
Convergence of iterated boolean sums of simultaneous approximants   总被引:3,自引:0,他引:3  
J. C. Sevy 《Calcolo》1993,30(1):41-68
Explicit error estimates are given for the iterated Boolean sum of a sequence of simultaneous approximants; the rate of convergence is shown to be improved for smooth functions. The general results are applied in the case of the Bernstein, Durrmeyer and Stancu operators.  相似文献   
993.
The SAMPEX (Solar, Anomalous, and Magnetospheric Particle Explorer) LEICA instrument is designed to measure ~0.5-5-MeV/nucleon solar and magnetospheric ions over the range from He-Ni. The instrument is a time-of-flight (TOF) mass spectrometer, which measures particle TOF over an ~0.5-m path and the residual energy deposited in an array of Si solid state detectors. Large-area microchannel plates are used, resulting in a large geometrical factor for the instrument (0.6 cm2 sr), which is essential for accurate compositional measurements in small solar flares and in studies of precipitating magnetospheric heavy ions  相似文献   
994.
The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.  相似文献   
995.
The analysis and design of an LCC resonant inverter for a 20 kHz AC distributed power system are presented. Several resonant converter topologies are assessed to determine their suitability for high efficiency power conversion, under resistive and reactive loads. Two LCC-resonant inverter designs were implemented. One with all switches operating with zero voltage switching (ZVS), and another with two switches operating with ZVS and two switches with zero current switching (ZCS). The experimental results are presented along with a performance comparison of the two versions  相似文献   
996.
The pyrolysis of tertiarybutylphosphine (TBP) has been studied in the low pressure conditions used for chemical beam epitaxy (CBE). The pyrolysis studies were carried out in low pressure reactors of two different configurations, one of which is a cracker cell designed for use in a CBE system. The reaction products were studied using a quadrupole mass spectrometer. The products observed are accounted for by a reaction mechanism involving homolysis of the parent TBP molecule to produce PH2 and C4H9 radicals. These undergo subsequent reactions to form the stable products C4H8, PH3 and H2, with smaller amounts of P and P2 being produced. The production of the sub-hydride PH2 using this cracker cell design indicates that the use of partially cracked TBP may be a promising technique for reducing the amount of carbon incorporated into the growing epitaxial layer.  相似文献   
997.
998.
Lightly p-doped (3×1017 cm-3) GaN grown on GaAs substrates by metal organic molecular beam epitaxy (MOMBE) shows deactivation of the residual acceptors on exposure to a microwave (2.45 GHz) hydrogen plasma at 250°C. Subsequent annealing to 350°C produces further dopant passivation, while higher temperatures (450°C) restore the initial conductivity. These results suggest that hydrogen carrier gases should be avoided during vapour phase growth of III-V nitrides  相似文献   
999.
Two layer frequency selective surfaces (FSS) comprised of aperture elements on a single dielectric substrate are used to produce extremely narrow and angularly stable passband transmission responses. Experimental results are compared with predictions to verify a computer model which is based on solving a pair of coupled aperture integral equations. Reductions in bandwidth of up to a factor of seven have been achieved  相似文献   
1000.
The disposition behavior of trientine, a selective copper-chelating drug for Wilson's disease, and its metabolites in normal patients with Wilson's disease and rats were studied. A high concentration of metabolites appeared in blood samples of patients and rats in the early stage after administration of trientine. Furthermore, large amount of trientine metabolites were excreted into the urine of patients. These results suggest that trientine is remarkably subjected to a first-pass effect. The drug concentration area under the curve (AUC) of the unchanged form and the metabolites of trientine in patients was not dependent on the administered dosage. It seems that the absorption process is an important factor for the disposition behavior of trientine, we have also investigated the uptake characteristics of trientine by rat intestinal brush-border membrane vesicles. The uptake characteristics of trientine were similar to the physiological polyamines, spermine and spermidine. The uptake rate of trientine was dose-dependently inhibited by spermine and spermidine. Moreover, spermine competitively inhibited the uptake of trientine with a Ki value of 18.6 muM. This value is very close to the Km value for spermine (30.4 muM). These data suggested that the uptake mechanism of trientine in rat small intestinal brush-border membrane vesicles was almost identical to that of spermine and spermidine, and that the physiological polyamines seem to have the ability to inhibit the absorption of trientine from the gastrointestinal tract.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号