全文获取类型
收费全文 | 491886篇 |
免费 | 5541篇 |
国内免费 | 1357篇 |
专业分类
电工技术 | 8218篇 |
综合类 | 374篇 |
化学工业 | 76267篇 |
金属工艺 | 22989篇 |
机械仪表 | 17050篇 |
建筑科学 | 10888篇 |
矿业工程 | 4289篇 |
能源动力 | 10824篇 |
轻工业 | 36845篇 |
水利工程 | 6113篇 |
石油天然气 | 14837篇 |
武器工业 | 34篇 |
无线电 | 52578篇 |
一般工业技术 | 106728篇 |
冶金工业 | 77166篇 |
原子能技术 | 14274篇 |
自动化技术 | 39310篇 |
出版年
2021年 | 4555篇 |
2019年 | 4372篇 |
2018年 | 7954篇 |
2017年 | 8208篇 |
2016年 | 8836篇 |
2015年 | 5223篇 |
2014年 | 8896篇 |
2013年 | 21661篇 |
2012年 | 13859篇 |
2011年 | 18262篇 |
2010年 | 14516篇 |
2009年 | 16263篇 |
2008年 | 16756篇 |
2007年 | 16447篇 |
2006年 | 14273篇 |
2005年 | 12802篇 |
2004年 | 12425篇 |
2003年 | 12165篇 |
2002年 | 11474篇 |
2001年 | 11691篇 |
2000年 | 10976篇 |
1999年 | 10758篇 |
1998年 | 22864篇 |
1997年 | 16683篇 |
1996年 | 12652篇 |
1995年 | 9923篇 |
1994年 | 8882篇 |
1993年 | 8984篇 |
1992年 | 7057篇 |
1991年 | 6969篇 |
1990年 | 6894篇 |
1989年 | 6614篇 |
1988年 | 6424篇 |
1987年 | 5743篇 |
1986年 | 5575篇 |
1985年 | 6340篇 |
1984年 | 5933篇 |
1983年 | 5593篇 |
1982年 | 5219篇 |
1981年 | 5339篇 |
1980年 | 5191篇 |
1979年 | 5216篇 |
1978年 | 5300篇 |
1977年 | 5570篇 |
1976年 | 6584篇 |
1975年 | 4734篇 |
1974年 | 4735篇 |
1973年 | 4825篇 |
1972年 | 4099篇 |
1971年 | 3763篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
61.
The thermal expansion of tellurides of germanium, bismuth, and intermetallic compounds is investigated over the temperature range 293-973 K.Belarusian Agricultural Technical University, Minsk. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 66, No. 5, pp. 612–616, May 1994. 相似文献
62.
M.E.W. Eggenkamp V. A. Shvarts R. Blaauwgeers A. Storm R. Jochemsen G. Frossati 《Journal of Low Temperature Physics》1998,110(1-2):299-304
This paper focuses on the hydrodynamics of third sound on a superfluid
3
He film. We solve the hydrodynamical equations in the limit of thick films with weak interaction with the substrate. The surface tension at the free interface is shown to have a large effect on the third sound velocity and on the attenuation for frequencies larger than 1Hz. In the case of a diffusely scattering substrate a ripplon-like dispersion relation is found for this frequency range. 相似文献
63.
64.
65.
A method is described for experimentally determining the dose rate created in building bricks by incorporated natural radionuclides.
It was established using the thermoluminescence dosimetry method that the measured dose rate depends on the detector thickness,
the mass of the ceramic product investigated, and the irradiation geometry. The contributions to the measured dose of weakly
penetrating α and β radiation and hard ψ radiation are separated, the ratio between them depending on the experimental conditions.
Translated from Izmeritel'naya Tekhnika, No. 7, pp. 62–66, July, 1996. 相似文献
66.
C. Ebert presents his views on the state of software engineering as a field, its roots and inherent conflicts, its relationship to other engineering disciplines, where it is headed, and what we can do to influence that direction. T. Matsubara, T. Webb, M. Pezze, and O.W. Bertelsen offer a spectrum of further insights 相似文献
67.
E Messou SV Sangaré R Josseran C Le Corre J Guélain 《Canadian Metallurgical Quarterly》1997,90(1):44-47
BACKGROUND: Gastric sucrose permeability is a noninvasive marker that reliably increases in association with gastrointestinal injury due to use of nonsteroidal antiinflammatory drugs. Despite the effect of Helicobacter pylori infection on the gastric mucosa, in a previous study we were unable to demonstrate that H. pylori infection was associated with abnormal gastric sucrose permeability. Our goal in this study was to explore further whether H. pylori infection changed gastric permeability; therefore, we evaluated the effect of treatment of H. pylori infection on gastric permeability to sucrose and the relation of sucrose permeability to density of polymorphonuclear leukocytes. MATERIALS AND METHODS: Five hundred milliliters of a solution containing 100 gm of sucrose was ingested by the subject at bedtime. Overnight urine was collected and assayed for sucrose by high-performance liquid chromatography. Sucrose permeability was assessed both before and approximately 4 weeks after anti-H. pylori therapy. RESULTS: Seventeen asymptomatic H. pylori-infected volunteers participated; 8 were cured. Sucrose permeability was in the range commonly found in normal controls both before and after anti-H. pylori therapy (mean excretion, 76.3 mg; range, 13-171 mg). Gastric sucrose permeability correlated with the density of polymorphonulcear cell infiltration of the mucosa. Cure of the H. pylori infection was associated with a small but significant decrease in sucrose permeability (98.8 +/- 18 mg to 51.7 +/- 9.8 mg (p = .01). Sucrose permeability was greater in those with a high density of mucosal polymorphonuclear cells compared to those with lower scores (119.5 +/- 4 vs 71.4 +/- 13 for those with scores > or = 5 compared to scores < or = 4; p = .023). Failed therapy resulted in an increase in the mucosal density of polymorphonuclear infiltration and sucrose permeability (56.4 +/- 13 mg-99.7 +/- 19 mg pretreatment vs posttreatment, respectively; p = .031). CONCLUSION: H. pylori gastritis causes a small but measurable increase in gastric permeability to sucrose that may reflect epithelial transmigration of neutrophils. 相似文献
68.
69.
70.
Neviani A. Meneghesso G. Zanoni E. Hafizi M. Canali C. 《Electron Device Letters, IEEE》1997,18(12):619-621
Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient αn in In0.53Ga0.47As at medium-low electric fields are reported for the first time. The increase of αn with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In0.53Ga 0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In0.53Ga 0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current 相似文献