首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   206207篇
  免费   15373篇
  国内免费   7807篇
电工技术   11244篇
技术理论   14篇
综合类   11215篇
化学工业   35697篇
金属工艺   10538篇
机械仪表   11998篇
建筑科学   16408篇
矿业工程   4942篇
能源动力   5849篇
轻工业   12682篇
水利工程   3211篇
石油天然气   11073篇
武器工业   1345篇
无线电   25484篇
一般工业技术   26716篇
冶金工业   11407篇
原子能技术   2114篇
自动化技术   27450篇
  2024年   881篇
  2023年   3262篇
  2022年   5827篇
  2021年   7927篇
  2020年   5796篇
  2019年   5014篇
  2018年   5414篇
  2017年   6200篇
  2016年   5693篇
  2015年   7290篇
  2014年   9519篇
  2013年   12270篇
  2012年   12224篇
  2011年   13870篇
  2010年   11610篇
  2009年   11460篇
  2008年   10872篇
  2007年   10467篇
  2006年   10857篇
  2005年   9629篇
  2004年   6563篇
  2003年   5777篇
  2002年   5253篇
  2001年   4723篇
  2000年   4868篇
  1999年   5651篇
  1998年   5425篇
  1997年   4432篇
  1996年   4030篇
  1995年   3339篇
  1994年   2793篇
  1993年   2217篇
  1992年   1704篇
  1991年   1281篇
  1990年   1024篇
  1989年   881篇
  1988年   688篇
  1987年   501篇
  1986年   397篇
  1985年   340篇
  1984年   212篇
  1983年   199篇
  1982年   166篇
  1981年   147篇
  1980年   136篇
  1979年   97篇
  1978年   63篇
  1977年   75篇
  1976年   93篇
  1975年   38篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
51.
研究了稳定ZrO_2和部份稳定ZrO_2对β″-Al_2O_3陶瓷的强化和韧化作用,观察了不同种类、不同含量的ZrO_2对β″-Al_2O_3陶瓷的显微结构、力学性能和电导率的影响,探讨了β″-Al_2O_3的韧化机理。  相似文献   
52.
Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities  相似文献   
53.
Polyvinylpyrrolidone (PVP) in aqueous solution was used as a binding agent in a fluidized-bed system to agglomerate acetaminophen powder into directly compressible granules. It was found that a minimal amount of 5% w/w PVP in a concentration of 7.5% w/v or less was needed to produce granules with an acceptable flow and the corresponding tablets having enough hardness without capping. There was a strong correlation between the time for 80% dissolved (T80) and the logarithm of granule volume-surface mean diameter. A directly compressible acetaminophen composition to manufacture tablets having a T80 value less than 30 min can be prepared simply by adding an appropriate amount of disintegrant (crospovidone, sodium starch glycolate, or pregelatinized starch) to the agglomerated granules.  相似文献   
54.
WC对Cu/WC_P复合材料性能及组织的影响   总被引:8,自引:0,他引:8  
通过WC含量对WC/Cu复合材料性能的影响,确定了冷压-烧结法制备Cu/WC材料的适宜WC含量为10vol%左右。并就WC对该材料组织和再结晶行为的影响进行了有益的探讨。  相似文献   
55.
利用挤压铸造制备氧化铝/锌合金复合材料,在扫描电镜(SEM)上观察复合材料的界面。结果表明,在复合材料中纤维与基体间存在致密界面层,合金元素通过适当的化学反应可改善纤维与基体间的结合;在凝固过程中,纤维/基体界面上的硅在共晶体的共生生长过程中起了领先相作用,导致复合材料的共晶转变是由铝硅共晶转变和锌铝共晶转变两者组成。  相似文献   
56.
A unidirectional three-phase switch-mode rectifier that delivers sinusoidal input currents in phase with the corresponding input phase voltages is proposed and analyzed in this paper. In the proposed topology, three AC switches are placed before the bridge rectifier and, respectively, across two power lines. A simple control scheme combing space-vector modulation and hysteresis current control is presented. Sinusoidal input line currents are observed in experimental results  相似文献   
57.
An analytical model for the grain-barrier height of the intrinsic poly-Si thin-film transistors (TFTs) is developed, in which the grain-barrier height for the applied gate voltage smaller than the threshold voltage is obtained by solving the charge neutrality equation and the grain-barrier height for the applied gate voltage larger than the threshold voltage is obtained by using the quasi-two-dimensional (2-D) method. Good agreements between experimental and simulation results are obtained for a wide gate voltage range  相似文献   
58.
A technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO2 film with a lower P-etch rate shows a dense structure. LPD SiO2 also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO 2 as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)  相似文献   
59.
Z. Jiang  Q. Chen  A. Moser 《Indoor air》1992,2(3):168-179
In order to cumpare the peformance of different supply diffuers of ventilation air, the airflow passern, temperature stratifiation and contaminant dispersion in a furnitured office ventilated by three kinds of air diffuer were numerically investigated. The air diffuers studied in this paper are a quarter-cylinder displacement diffuer on the floor and mixing diffuers (linear and vortex diffuers) on the ceiling. The heat sources in the of-fice are considered to be 50% convective and 50% radiative. The k-? two-equatwn model of turbulence is employed to predict the turbulent diffusion. The results show that the displacement diffuser provides a rather uniform flow field with low velocify in most areas, and the vertical temperature difference from floor to ceiling is as high as 6 K. With the linear diffuser, the air velociry is high, and the temperature is uniform both horizontally and vertically. The air velocity generated by the vortex diffuser is moderate. The distributions of the temperature and the contaminant are rather uniform.  相似文献   
60.
基数排序由于其效率高而被广泛应用。通常,基数排序所用的基数是10,然而,如果求得一个基数r_(best),并且用r_(best)为基数进行基数排序使排序时间达到最小,则这将具有非常重要的意义。本文给出了求r_(best)的方法,分析了以r_(best)为基数进行基数排序的时间复杂度,提出了进一步提高效率的措施,并将以r_(best)为基数的基数排序速度与以10为基数的基数排序进行了比较。  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号