直埋光缆接头盒浸水防治的措施

直埋光缆线路接头盒浸水问题是一直困扰光缆线路维护的一个难题,本文通过对凡士林规格及性能的分析,利用凡士林对光缆接头盒进行密封安装实验.实验表明凡士林防水性能良好,适合作预防光缆接头盒浸水材料.     

PCCC for the performance improvement of the wireless optical communication system

Opticalwireless,alsoknownasfree spaceoptics,isa cost effectiveandwidebandwidthaccesstechniqueandreceivesgrowingattentionwithrecentcommercialization success.Buttheperformanceofwirelessopticalcommu nicationwouldbeimpairedintheatmosphericchannelbyattenuation…     

Photomultiplication-Type Organic Photodetectors with High EQE-Bandwidth Product by Introducing a Perovskite Quantum Dot Interlayer

A photomultiplication (PM)-type organic photodetector (OPD) that exploits the ionic motion in CsPbI₃ perovskite quantum dots (QDs) is demonstrated. The device uses a QD monolayer as a PM-inducing interlayer and a donor–acceptor bulk heterojunction (BHJ) layer as a photoactive layer. When the device is illuminated, negative ions in the CsPbI₃ QD migrate and accumulate near the interface between the QDs and the electrode; these processes induce hole injection from the electrode and yield the PM phenomenon with an external quantum efficiency (EQE) >2000% at a 3 V applied bias. It is confirmed that the ionic motion of the CsPbI₃ QDs can induce a shift in the work function of the QD/electrode interface and that the dynamics of ionic motion determines the response speed of the device. The PM OPD showed a large EQE-bandwidth product >10⁶ Hz with a −3 dB frequency of 125 kHz at 3 V, which is one of the highest response speeds reported for a PM OPD. The PM-inducing strategy that exploits ionic motion of the interlayer is a potential approach to achieving high-efficiency PM OPDs.     

1.54 lm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays

A GaSb quantum-well (QW) laser diode grown monolithically on a 5deg miscut Si (001) substrate is presented. The III-Sb epi-structure is grown monolithically on the miscut Si substrate via a thin (50 nm) AlSb nucleation layer. The 13% lattice mismatch between AlSb and Si is accommodated by a self-assembled 2D array of interfacial misfit dislocations (IMF). The 5deg miscut geometry enables simultaneous IMF formation and anti-phase domain suppression. The 1 mm times 100 mum GaSb QW laser diode operates under pulsed conditions at 77 K with a threshold current density of 2 kA/cm² and a maximum peak power of ~20 mW. Furthermore, the device is characterised by a 9.1 Omega forward resistance and a leakage current density of 0.7 A/cm² at -5 V.     

融合地址簿系统关键技术研究

融合地址簿系统是对位于多种终端的多种用户地址进行综合管理的业务新技术,其显著优点是当任一联系人的信息改变时能够对所有本地地址簿进行及时更新,有效地解决地址数据的失效问题。本文研究了融合地址簿系统中数据同步更新和订阅的关键实现技术,给出了系统架构,并给出了系统的仿真测试。     

Significantly Enhanced Photoluminescence of Doped Polymer‐Metal Hybrid Nanotubes

We report on the significantly enhanced photoluminescence (PL) of hybrid double‐layered nanotubes (HDLNTs) consisting of poly(3‐methylthiophene) (P3MT) nanotubes with various doping levels enveloped by an inorganic, nickel (Ni) metal nanotube. From laser confocal microscopy PL experiments on a single strand of the doped‐P3MT nanotubes and of their HDLNTs, the PL peak intensity of the HDLNT systems increased remarkably up to ～350 times as the doping level of the P3MT nanotubes of the HDLNTs increased, which was confirmed by measurements of the quantum yield. In a comparison of the normalized ultraviolet and visible absorption spectra of the doped‐P3MT nanotubes and their HDLNTs, new absorption peaks corresponding to surface‐plasmon (SP) energy were created at 563 and 615 nm after the nanoscale Ni metal coating onto the P3MT nanotubes, and their intensity increased on increasing the doping level of the P3MT nanotube. The doping‐induced bipolaron peaks of the HDLNTs of doped‐P3MT/Ni were relatively reduced, compared with those of the doped‐P3MT nanotubes before the Ni coating, due to the charge‐transfer effect in the SP‐resonance (SPR) coupling. Both energy‐transfer and charge‐transfer effects due to SP resonance contributed to the very‐large enhancement of the PL efficiency of the doped‐P3MT‐based HDLNTs.     

宽带数字信道化接收机算法研究与硬件实现

对宽带数字信道化接收机进行了理论研究与硬件实现。该系统模型采用多相滤波结构,使用IFFT算法简化信道化多相滤波器结构与参数,并对各个信道进行下变频产生基带信号以便后续信号识别分析处理,信道化频带划分采用均匀且相邻信道50%交叠的方式。该系统硬件采用A/D转换芯片和FPGA芯片实现,A/D转换芯片完成宽带信号采集,FPGA芯片完成相关算法软件实现。该接收机结构具有设计灵活、实现简单、计算效率高、实时处理能力强、计算量低、FPGA硬件资源少等优点。     

Physicochemically Stable Polymer‐Coupled Oxide Dielectrics for Multipurpose Organic Electronic Applications

A chemically coupled polymer layer is introduced onto inorganic oxide dielectrics from a dilute chlorosilane‐terminated polystyrene (PS) solution. As a result of this surface modification, hydrophilic‐oxide dielectrics gain hydrophobic, physicochemically stable properties. On such PS‐coupled SiO₂ or AlO_x dielectrics, various vacuum‐ and solution‐processable organic semiconductors can develop highly ordered crystalline structures that provide higher field‐effect mobilities (μ_FETs) than other surface‐modified systems, and negligible hysteresis in organic field‐effect transistors (OFETs). In particular, the use of PS‐coupled AlO_x nanodielectrics enables a solution‐processable triethylsilylethynyl anthradithiophene OFET to operate with μ_FET ～ 1.26 cm² V^?1 s^?1 at a gate voltage below –1 V. In addition, a complementary metal‐oxide semiconductor‐like organic inverter with a high voltage gain of approximately 32 was successfully fabricated on a PS‐coupled SiO₂ dielectric.     

通信用VRLA蓄电池组的可靠性研究

VRLA蓄电池组是当前通信电源系统中主要的储能装置,它的可靠性对通信电源可靠性有着重要影响.文章主要从蓄电池组的接线方式上对蓄电池组的可靠性进行了计算分析,相比先串联后并联方式,先并联后串联方式可有效提高蓄电池组的可靠性.同时,文中还通过冗余设计、正确的使用维护措施来提高蓄电池组的可靠性.     

一种新的点目标无源极化校准方案

极化校准是极化散射矩阵正确获取的重要步骤之一,大口径雷达的极化校准一直是一个难点。为此,提出一种新的无源极化校准方案,该方案利用已校准的小口径雷达来校准大口径雷达。首先,通过外场实验用单个二面角校准小口径雷达;然后,小口径雷达发射信号照射卫星,大小口径两部雷达同时接收并进行信号处理,给出相应的校准算法,最后,通过专业电磁计算软件获得定标体以及卫星散射矩阵的理论值,仿真实验结果验证了提出的极化校准方案的有效性。