2,6‐Bis(amido)benzoic Acid with Internal Hydrogen Bond as Brønsted Acid Catalyst for Friedel–Crafts Reaction of Indoles

Benzoic acid catalysts bearing two amide groups that increase the Brønsted acidity of the carboxylic acid moiety by internal hydrogen‐bonding interactions were designed as a novel class of carboxylic acid catalysts for the Friedel–Crafts reaction of indoles with β‐nitrostyrenes and 3,3‐disubstituted 3H‐indoles to obtain the corresponding Friedel–Crafts adducts in high yields. The internal hydrogen‐bonding benzoic acid catalysts have a relatively high Brønsted acidity compared with benzoic acid based on the pK_a measurements in DMSO by UV spectrophotometric titration.

     

Positive bias temperature instabilities on sub-nanometer EOT FinFETs

PBTI degradation on FinFETs with HfO₂/TiN gate stack (EOT < 1 nm) is studied. Thinner TiN layer decreases interfacial oxide thickness, and reduces PBTI lifetime. This behavior is consistent with the results in planar devices. Corner rounding effect on PBTI is also analyzed. Finally, charge pumping measurements on devices with several fin widths devices apparently show a higher density of defects in the top-wall high-κ oxide than in the sidewall of the fin. This could explain more severe PBTI degradation.     

Correlation between int-2 oncogene amplification and increased tumor size in breast cancer]

Gloves should provide two-way protection from the transmission of microorganisms between worker and patient. Until recently, glove manufacturers paid little attention to barrier properties. Because the operating room is a high-risk area, surgical nurses must be especially careful about gloving practices.     

Inflammatory mediator and organ dysfunction syndrome

PURPOSE: To assess the role of serum folate in the risk for coronary heart disease in a national cohort of US adults. METHODS: Data from the First National Health and Nutrition Examination Survey Epidemiologic Follow-up Study (N = 1921) were used to determine whether a low serum folate concentration was associated with an increased risk for incident coronary heart disease (N = 284). The Cox proportional hazards model adjusted for age, sex, race, education, serum cholesterol, systolic blood pressure, body mass index, cigarette smoking, and alcohol consumption. RESULTS: The association between folate and risk for coronary heart disease differed by age group (p = 0.03). Among persons aged 35-55 years, the relative risk for heart disease was 2.4 (95% confidence interval (CI), 1.1-5.2) for persons in the lowest quartile (< or = 9.9 nmol/L) when compared with those in the highest quartile (> or = 21.8 nmol/L). However, among persons > or = 55 years the relative risk was 0.5 (95% CI, 0.3-0.8) for comparisons of the lowest versus highest quartiles. CONCLUSIONS: If the age differences in the risk for heart disease are confirmed, randomized clinical trials assessing the role of folic acid for the prevention of heart disease may need to include young adults in order to demonstrate benefits related to folate supplementation.     

Garenoxacin pharmacokinetics in patients undergoing maintenance hemodialysis

Introduction: Studies on the pharmacokinetics of the antibiotic garenoxacin (GRNX) in patients with renal insufficiency are lacking. In this study, we attempted to ascertain the appropriate dose of GRNX in patients undergoing maintenance hemodialysis (MH) based on pharmacokinetic parameters and clinical outcomes. Methods: Six male patients with infections who were undergoing MH received 200 mg GRNX once daily. Blood samples were taken before and at 1, 2, 4, 6, 12, and 24 hours after GRNX administration. Plasma GRNX concentrations were measured using high‐performance liquid chromatography. Findings: The mean maximum plasma concentration (C_max) was 3.00 ± 1.12 µg/mL, time to maximum plasma concentration (T_max) was 3.0 ± 2.0 hours, and area under the curve for 24 hours (AUC_0–24) was 40.7 ± 16.7 µg·h/mL. The half‐life (T_1/2) of GRNX could not be calculated because plasma concentrations remained high 24 hours after administration. C_max was strongly associated with the GRNX dose per kilogram body weight (r = 0.85, P = 0.03). Clinically, fever resolved within 3 days of GRNX administration and C‐reactive protein levels returned to normal 14 days after administration. One patient experienced temporary increases in serum transaminase levels. Discussion: MH patients receiving 200 mg GRNX once daily for infection showed a reduced C_max but similar AUC_0–24 compared with healthy individuals. While this study evaluated the effect of GRNX treatment, further research is needed to assess the accumulation of GRNX and the impact of continuous administration on its pharmacokinetics, as well as to prevent the development of resistant mutants.     

Synthesis,electrochemical characterization of tetra- and octa-substituted dodecyl-mercapto tin phthalocyanines in solution and as self-assembled monolayers

Non-peripherally (α) tetra- (9) and octa-(7) substituted dodecyl-mercapto tin(IV) phthalocyanines were synthesized and their electrochemical behavior studied. Cyclic voltammetry and spectroelectrochemistry show ring-based reductions for 7 and 9, the former shows two ring oxidations, while the latter shows only one ring-based oxidation. The adsorption kinetics of (7) and (9) on gold electrode were investigated by electrochemical impedance spectroscopy (EIS). The equilibrium constant (K) for the adsorption and the Gibbs free energy (ΔG_ads) of the SAMs were evaluated based on the Frumkin isotherm.     

Improvement of switching time in a thermocapillarity optical switch

The switching time of existing thermocapillarity optical switches is about two orders of magnitude larger than that of other optical switches, such as a thermooptics switch and a free-space switch using microelectromechanical system technology. This paper reports a thermocapillarity switch whose switching time is comparable to that of the thermooptics and free-space switches. The greatly improved switching time is achieved by lowering the absolute viscosity of the refractive-index matching liquid and improving the switch design     

(211)-Oriented Domain Formation During Growth of ZnTe on m-Plane Sapphire by MBE

ZnTe epilayers have been grown on 2°-tilted m-plane $\left( {10\overline{1} 0} \right)$ sapphire substrates by molecular beam epitaxy. Pole figure imaging was used to study the domain distribution within the layer, and the pole figures of 111, 220, 004, and 422 ZnTe and $30\overline{3} 0$ sapphire were measured. Computer simulation was used to analyze the symmetry of the diffraction patterns seen in the pole figure images. Stereographic projections were also compared with the pole figures of 422 and 211 ZnTe, confirming that single-domain (211)-oriented ZnTe epilayers had been grown on the 2°-tilted m-plane sapphire substrates. Although differences in crystal structure and lattice mismatch were severe in these heterostructures, precise control of the substrate surface’s lattice arrangement would result in the formation of high-quality epitaxial layers.     

Improving the quality of sub-1.5-nm-thick oxynitride gate dielectric for FETs with narrow channel and shallow-trench isolation using radical oxygen and nitrogen

We have demonstrated that oxynitridation using radical-oxygen (radical-O) and radical-nitrogen (radical-N) improves reverse narrow channel effects (RNCE) and reliability in sub-1.5-nm-thick gate-SiO/sub 2/ FETs with narrow channel and shallow-trench isolation (STI), suitable for high-density SRAM and logic devices. The STI formation followed by oxidation for the gate-dielectric causes various orientations of the Si surface, and thus, thermal oxidation forms the partial thin SiO/sub 2/ and causes RNCE and reliability degradation. Oxidation using radical-O forms uniform SiO/sub 2/ on Si[100] and Si[111] surfaces and suppresses RNCE in a sub-1.5 nm-thick gate-SiO/sub 2/ FET with STI. Nitrifying the SiO/sub 2/ using radical-N increases the physical thickness while maintaining the oxide equivalent thickness on both Si[111] and Si[100] surfaces, thus producing a low-leakage and highly reliable sub-1.5 nm-thick gate-SiON.