化学束外延

本文介绍了化学束外延(CBE)的发明和发展,论述了CBE的原理和设备。文中还介绍了最近提出的一种生长机理。     

A high-current and high-temperature 6H-SiC thyristor

A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm² have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities     

The oxidative inducation test applied to medical PVC and other polymers

We have examined the applicability of this simple and effective test to polymer systems widely used in the medical industry. First, it was found that not every polymer examined exhibited a distinct onset of autocatalytic oxidation detectable by DSC. However, for cases where distinct onsets are found, powerful insights can be obtained. These included activation energy of the degradation, thermal oxidative shelf life prediction, and correlation, with product performances. Actual examples are presented to illustrate the utility of the test.     

特征X射线能谱法测定Fe^＋注入小麦种子的深度

用１１０ｋｅＶ Ｆｅ＾＋离子束垂直注入小麦种胚后，在扫描电子显微镜上沿种子纵沟剖面，在不同深度上测量Ｆｅ元素被激发出的特征Ｘ射线强度分布，结果表明分布呈指数衰减，与晶体中的热扩散分布相类似，并对此进行了讨论。     

HHD型核子秤电离室物理性能检测

HHD型核子秤电离室已成功地使用于HCS型核子秤.对它的各种物理性能指标进行了检测,各项性能指标都达到了设计要求。     

辐射制备缓释抗癌药阿糖胞苷的研究

报告了甲基丙烯酸酯类在室温下进行辐射聚合制备缓释抗癌药阿糖胞苷（Ａｒａ－Ｃ）的研究结果。结果表明，不仅亲水性单体，而且疏水性单体（包括ＭＭＡ、ＥＭＡ和ＢＭＡ等）都可用于辐射固化。加入到亲水性基质中的疏水性单体可以延缓药物的离体释放，其顺序是ＭＭＡ＜ＥＭＡ＜ＢＭＡ，央ＭＭＡ－ＨＥＭＡ共聚物中，Ａｒａ－Ｃ释放率随着基质中的ＭＭＡ含量增加而降低。药物的离体释放还受许多困素的控制，结果显示：药物释放量随着     

Comparisons of PWM and one-cycle control for power amplifier with multilevel converter

Based on the concepts of cascade multilevel converters and one-cycle technique, comparisons are conducted to characterize the distortion of the pulsewidth modulation (PWM) and one-cycle control methods that were applied to converters. Simulation results for the different control schemes are obtained in PSIM software initially to see the effect of one-cycle control different from that of PWM control. Through the comparisons, the advantages and disadvantages are identified for each method. The one-cycle scheme is better than PWM control in reducing undesirable harmonics and tracing dynamic waveforms. Simulation and experimental results are also provided to verify the conclusions.     

A truncated poisson regression model with applications to occurrence of adenomatous polyps

Adenomatous polyps are considered as the dominant precursor lesion of colorectal cancer. A phase III colorectal cancer prevention trial, conducted by the Arizona Cancer Center, concerns the ability of wheat bran fibre supplement to reduce the recurrence of adenomatous polyps. All participants in the study are to have had colorectal polyps detected and removed during a baseline (qualifying) colonoscopy within three months prior to enrolment. In this paper, our interest focuses on occurrence of adenomatous polyps at the baseline colonoscopy. We use a truncated Poisson model to fit these types of data. We develop a regression model to assess the effects of explanatory factors on the positive counting variable. We fit truncated Poisson parameters by a log-linear regression model and estimate regression parameters by the maximum likelihood procedure. Finally, we apply it to the baseline colonoscopy data from the Wheat Bran Fiber study.     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.