Dose control circuit for digital electrostatic electron-beam array lithography

This paper demonstrates a technique for controlling the electron emission of an array of field emitting vertically aligned carbon nanofibers (VACNFs). An array of carbon nanofibers (CNF) is to be used as the source of electron beams for lithography purposes. This tool is intended to replace the mask in the conventional photolithography process by controlling their charge emission using the “Dose Control Circuitry” (DCC). The large variation in the charge emitted between CNFs grown in identical conditions forced the controller design to be based on fixed dose rather than on fixed time. Compact digital control logic has been designed for controlling the operation of DCC. This system has been implemented in a 0.5 μm CMOS process. Chandra Sekhar A. Durisety received his B.E. (Hons.) Instrumentation from Birla Institute of Technology and Sciences, Pilani, India in 1997 and his M.S in Electrical Engineering from University of Tennessee, Knoxville in 2002. Since 2003, he has been working towards his Ph.D degree also in Electrical Engineering at Integrated Circuits and Systems Lab (ICASL), University of Tennessee, Knoxville. He joined Wipro Infotech Ltd, Global R & D, Bangalore, India in 1997, where he designed FPGA based IPs for network routers. Since 1999, he was involved in the PCI bridge implementation at CMOS chips Inc, Santa Clara, CA, and the test bench development for Sony’s MP3 player, while at Toshiba America Electronic Components Inc., San Jose, CA. His research interests include multi-stage amplifiers, data converters, circuits in SOI and Floating Gate Devices. Rajagopal Vijayaraghavan received the B.E degree in electronics and communication engineering from Madras University in 1998 and the M.S degree in electrical engineering from the University of Texas, Dallas in 2001.He is currently working towards the Ph.D degree in electrical engineering at the University of Tennessee. His research interest is in the area of CMOS Analog and RF IC design. His current research focuses on LNAs and VCOs using SOI based MESFET devices. Lakshmipriya Seshan was born in Trivandrum, India on April 30, 1979. She received her B.tech in Electronincs & Communication Engg from Kerala University, India in June 2000 and M.S in Electrical Engg from University of Tennessee in 2004. In 2004, she joined Intel Corporation as an Analog Engineer, where she is engaged in the design of low power, high speed analog circuits for various I/O interface topologies. Syed K. Islam received his B.Sc. in Electrical and Electronic Engineering from Bangladesh University of Engineering and Technology (BUET) and M.S. and Ph.D. in Electrical and Systems Engineering from the University of Connecticut. He is presently an Associate Professor in the Department of Electrical and Computer Engineering at the University of Tennessee, Knoxville. Dr. Islam is leading the research efforts of the Analog VLSI and Devices Laboratory at the University of Tennessee. His research interests are design, modeling and fabrication of microelectronic/optoelectronic devices, molecular scale electronics and nanotechnology, biomicroelectronics and monolithic sensors. Dr. Islam has numerous publications in technical journals and conference proceedings in the areas of semiconductors devices and circuits. Benjamin J. Blalock received his B.S. degree in electrical engineering from The University of Tennessee, Knoxville, in 1991 and the M.S. and Ph.D. degrees, also in electrical engineering, from the Georgia Institute of Technology, Atlanta, in 1993 and 1996 respectively. He is currently an Assistant Professor in the Department of Electrical and Computer Engineering at The University of Tennessee where he directs the Integrated Circuits and Systems Laboratory (ICASL). His research focus there includes analog IC design for extreme environments (both wide temperature and radiation immune), multi-gate transistors and circuits on SOI, body-driven circuit techniques for ultra low-voltage analog, mixed-signal/mixed-voltage circuit design for systems-on-a-chip, and bio-microelectronics. Dr. Blalock has co-authored over 60 published refereed papers. He has also worked as an analog IC design consultant for Cypress Semiconductor Corp. and Concorde Microsystems Inc.     

A time optimal wavelength rerouting algorithm for dynamic trafficin WDM networks

In this paper, we consider wavelength rerouting in wavelength routed wavelength division multiplexed (WDM) networks with circuit switching, wherein lightpaths between source-destination pairs are dynamically established and released in response to a random pattern of arriving connection requests and connection holding times. The wavelength continuity constraint imposed by WDM networks leads to poor blocking performance. Wavelength rerouting is a viable and cost effective mechanism that ran improve the blocking performance by rearranging certain existing lightpaths to accommodate a new request. Recently, a rerouting scheme called “parallel move-to-vacant wavelength retuning (MTV-WR)” with many attractive features such as shorter disruption period and simple switching control, and a polynomial time rerouting algorithm, for this scheme, to minimize the weighted number of rerouted lightpaths have been proposed. This paper presents a time optimal rerouting algorithm for wavelength-routed WDM networks with parallel MTV-WR rerouting scheme. The algorithm requires only O(N²W) time units to minimize the weighted number of existing lightpaths to be rerouted, where N is the number of nodes in the network and W is the number of wavelength channels available on a fiber link. Our algorithm is an improvement over the earlier algorithm proposed in that it requires O(N³W+N²W²) time units, which is not time optimal. The simulation results show that our algorithm improves the blocking performance considerably and only very few lightpaths are required to be rerouted per rerouting. It is also established through simulation that our algorithm is faster than the earlier rerouting algorithm by measuring the time required for processing connection requests for different networks     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

Classification of sport videos using edge-based features and autoassociative neural network models

In this paper, we propose a method for classification of sport videos using edge-based features, namely edge direction histogram and edge intensity histogram. We demonstrate that these features provide discriminative information useful for classification of sport videos, by considering five sports categories, namely, cricket, football, tennis, basketball and volleyball. The ability of autoassociative neural network (AANN) models to capture the distribution of feature vectors is exploited, to develop class-specific models using edge-based features. We show that combining evidence from complementary edge features results in improved classification performance. Also, combination of evidence from different classifiers like AANN, hidden Markov model (HMM) and support vector machine (SVM) helps improve the classification performance. Finally, the performance of the classification system is examined for test videos which do not belong to any of the above five categories. A low rate of misclassification error for these test videos validates the effectiveness of edge-based features and AANN models for video classification.     

Ball Mill Synthesis of Bulk Quaternary Cu<Subscript>2</Subscript>ZnSnSe<Subscript>4</Subscript> and Thermoelectric Studies

In this work, quaternary chalcogenide Cu₂ZnSnSe₄ (CZTSe) was synthesized using a mechanochemical ball milling process and its thermoelectric properties were studied by electrical resistivity, Seebeck coefficient, and thermal conductivity measurements. The synthesis process comprises three steps viz., wet ball milling of the elemental precursors, vacuum annealing, and densification by hot pressing. The purpose of this is to evaluate the feasibility of introducing wet milling in place of vacuum melting in solid state synthesis for the reaction of starting elements. We report the structural characterization and thermoelectric studies conducted on samples that were milled at 300 rpm and 500 rpm. X-ray diffraction (XRD) analysis showed the existence of multiple phases in the as-milled samples, indicating the requirement for heat treatment. Therefore, the ball milled powders were cold pressed and vacuum annealed to eliminate the secondary phases. Annealed samples were hot pressed and made into dense pellets for further investigations. In addition to XRD, energy dispersive spectroscopy (EDS) studies were performed on hot pressed samples to study the composition. XRD and EDS studies confirm CZTSe phase formation along with ZnSe secondary phase. Electrical resistivity and Seebeck coefficient measurements were done on the hot pressed samples in the temperature range 340–670 K to understand the thermoelectric behaviour. Thermal conductivity was calculated from the specific heat capacity and thermal diffusivity values. The thermoelectric figure of merit zT values for samples milled at 300 rpm and 500 rpm are ～0.15 and ～0.16, respectively, at 630 K, which is in good agreement with the values reported for solid state synthesized compounds.     

Bandwidth extension in CMOS with optimized on-chip inductors

We present a technique for enhancing the bandwidth of gigahertz broad-band circuitry by using optimized on-chip spiral inductors as shunt-peaking elements. The series resistance of the on-chip inductor is incorporated as part of the load resistance to permit a large inductance to be realized with minimum area and capacitance. Simple, accurate inductance expressions are used in a lumped circuit inductor model to allow the passive and active components in the circuit to be simultaneously optimized. A quick and efficient global optimization method, based on geometric programming, is discussed. The bandwidth extension technique is applied in the implementation of a 2.125-Gbaud preamplifier that employs a common-gate input stage followed by a cascoded common-source stage. On-chip shunt peaking is introduced at the dominant pole to improve the overall system performance, including a 40% increase in the transimpedance. This implementation achieves a 1.6-kΩ transimpedance and a 0.6-μA input-referred current noise, while operating with a photodiode capacitance of 0.6 pF. A fully differential topology ensures good substrate and supply noise immunity. The amplifier, implemented in a triple-metal, single-poly, 14-GHz f_Tmax, 0.5-μm CMOS process, dissipates 225 mW, of which 110 mW is consumed by the 50-Ω output driver stage. The optimized on-chip inductors consume only 15% of the total area of 0.6 mm²      

SEP calculations for coherent M‐ary FSK in different fading channels with MRC diversity

In this paper, the authors derive symbol error probability (SEP) expressions for coherent M‐ary frequency shift keying (MFSK) modulation schemes in multipath fading channels. The multipath or small‐scale fading process is assumed to be slow and frequency non‐selective. In addition, the channel is also subjected to the usual degradation caused by the additive white Gaussian noise (AWGN). Different small‐scale fading statistics such as Rayleigh, Rician (Nakagami‐n), Hoyt (Nakagami‐q), and Nakagami‐m have been considered to portray diverse wireless environments. Further, to mitigate fading effects through space diversity, the receiver front‐end is assumed to be equipped with multiple antennas. Independent and identically distributed (IID) as well as uncorrelated signal replicas received through all these antennas are combined with a linear combiner before successive demodulation. As the detection is coherent in nature and thus involves phase estimation, optimum phase‐coherent combining algorithms, such as predetection maximal ratio combining (MRC), may be used without any added complexity to the receiver. In the current text, utilizing the alternate expressions for integer powers (1≤n≤4) of Gaussian Q function, SEP values of coherent MFSK are obtained through moment generating function (MGF) approach for all the fading models (with or without MRC diversity) described above. The derived end expressions are composed of finite range integrals, which can be numerically computed with ease, dispenses with the need of individual expressions for different M, and gives exact values up to M=5. When the constellation size becomes bigger (M≥6), the same SEP expressions provide a quite realistic approximation, much tighter than the bounds found in previous literatures. Error probabilities are graphically displayed for each fading model with different values of constellation size M, diversity order L, and for corresponding fading parameters (K, q, or m). To validate the proposed approximation method extensive Monte‐Carlo simulations were also performed, which show a close match with the analytical results deduced in the paper. Both these theoretical and simulation results offer valuable insight to assess the efficacy of relatively less studied coherent MFSK in the context of the optimum modulation choice in wireless communication. Copyright © 2010 John Wiley & Sons, Ltd.     

Arsenic-doped mid-wavelength infrared HgCdTe photodiodes

The recently developed Te-rich, liquid-phase-epitaxy growth technology for low arsenic-doped mid-wavelength infrared (MWIR) HgCdTe with p-type doping concentrations <10¹⁵ cm⁻³ has enabled the fabrication of n⁺/p photodiodes using the damage associated with a boron ion implantation. The diode properties are presented and compared to similar diodes fabricated in p-HgCdTe doped with Group IBs. The attraction of the arsenic-doped diode technology is associated with the fact that the arsenic resides on the Te sublattice and is immune to the Hg interstitial fluxes that are present in the diode-formation process. This leads to minimal diode spread, limited primarily to the n⁺ region and, hence, a potential for use in really high-density infrared focal planes. At the same time, the Hg interstitials generated in the diode-formation process should purge the photodiode volume of fast diffusing species, resulting in a high-quality, diode-depletion region devoid of many Shockley-Read recombination centers. These aspects of diode formation in this material are discussed.     

Unified BER and optimum threshold analysis of binary modulations in simple and cascaded Rayleigh fading channels with switched combining

Following a unified analytical framework, the bit error rate (BER) of several coherent and non‐coherent binary modulation schemes is derived for a switched diversity system. The two variants of switched combining that have been investigated are switch and stay combining and switch and examine combining. For channel modelling, at first a simple slow flat fading channel is assumed, where the amplitude attenuation obeys the Rayleigh distribution. Later the BER calculations are repeated for cascaded Rayleigh fading channel case. Rayleigh fading is the most popular model for electromagnetic signal propagation in wireless media when both or either of the transmitter/receiver is fixed. On the other hand, when both the transmitter and the receiver are mobile, a cascaded (or double) Rayleigh fading model is better suited. The applicability of these two models, namely simple and cascaded Rayleigh model, has been indicated by several theoretical studies and their suitability is established by various field measurements. In our paper, simple closed‐form BER expressions as a function of switching threshold have been found and optimum switching thresholds have been computed for both these models as well as for both types of diversity combining described earlier. The results presented in this paper can be very useful for communication system designers to analyze link quality of switched diversity assisted systems in various wireless environments. Copyright © 2010 John Wiley & Sons, Ltd.     

Control and management in next-generation networks: challenges andopportunities

This article discusses the challenges and opportunities associated with a fundamental transformation of current networks toward a multiservice ubiquitous infrastructure with a unified control and management architecture. After articulating the major driving forces for network evolution, we outline the fundamental reasons why neither the control infrastructure of the PSTN nor that of the present-day Internet is adequate to support the myriad of new services in next-generation networks. Although NGN will inherit heavily from both the Internet and the PSTN, its control and management architecture is likely to be radically different from both, and will be anchored on a clean separation between a QoS-enabled transport/network domain and an object-oriented service/application domain, with a distributed processing environment that glues things together and universally addresses issues of distribution, redundancy, and concurrency control for all applications. Finally, we allude to the transition issues and show how voice-over-packet services are emerging as the bootstrap application for marshaling in the NGN architecture