Junction Stability in Ion-Implanted Mercury Cadmium Telluride

Ion implantation into HgCdTe results in the production of Hg interstitials, which can be subsequently driven into the HgCdTe by an annealing process. This diffusive drive-in of the Hg interstitials fills vacancies and kicks out group I impurities and results in the formation of an n–p junction. In this work we report on the production of interstitials during baking subsequent to the ion implantation process. Various concentrations of metal vacancies were first introduced into mid-wavelength infrared (MWIR, 3 μm to 5 μm) HgCdTe by annealing under tellurium-saturated conditions at various temperatures. Baking subsequent to planar implantation of boron produced n–p junctions whose depths were measured by defect etching. The results were modeled using a simple diffusion limited model from a fixed surface concentration. The surface concentration was allowed to decrease exponentially to zero after a time, found to be of the order of ∼80 h to 150 h. Exhaustion of the interstitials sources produced by the implantation was nearly complete after ∼400 h. The total number of mercury interstitials produced was approximately 50% of the implant dosage.     

Thermoelectric Properties of Two-Phase PbTe with Indium Inclusions

The thermoelectric figure of merit (zT) can be increased by introduction of additional interfaces in the bulk to reduce the thermal conductivity. In this work, PbTe with a dispersed indium (In) phase was synthesized by a matrix encapsulation technique for different In concentrations. x-Ray diffraction analysis showed single-phase PbTe with In secondary phase. Rietveld analysis did not show In substitution at either the Pb or Te site, and this was further confirmed by room-temperature Raman data. Low-magnification (~1500×) scanning electron microscopy images showed micrometer-sized In dispersed throughout the PbTe matrix, while at high magnification (150,000×) an agglomeration of PbTe particles in the hot-pressed samples could be seen. The electrical resistivity (ρ) and Seebeck coefficient (S) were measured from 300 K to 723 K. Negative Seebeck values showed all the samples to be n-type. A systematic increase in resistivity and higher Seebeck coefficient values with increasing In content indicated the role of PbTe-In interfaces in the scattering of electrons. This was further confirmed by the thermal conductivity (κ), measured from 423 K to 723 K, where a greater reduction in the electronic as compared with the lattice contribution was found for In-added samples. It was found that, despite the high lattice mismatch at the PbTe-In interface, phonons were not scattered as effectively as electrons. The highest zT obtained was 0.78 at 723 K for the sample with the lowest In content.     

First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys

Semiconductors - Compositional variations in GaAs based ternary alloys have exhibited wide range alterations in electronic properties. In the present paper, first-principles study of...     

Analysis of Test Application Time for Test Data Compression Methods Based on Compression Codes

We present an analysis of test application time for test data compression techniques that are used for reducing test data volume and testing time in system-on-a-chip (SOC) designs. These techniques are based on data compression codes and on-chip decompression. The compression/decompression scheme decreases test data volume and the amount of data that has to be transported from the tester to the SOC. We show via analysis as well as through experiments that the proposed scheme reduces testing time and allows the use of a slower tester. Results on test application time for the ISCAS'89 circuits are obtained using an ATE testbench developed in VHDL to emulate ATE functionality.     

A novel technique for RTP annealing of compound semiconductors

We introduce for the first time a novel rapid thermal processing (RTP) unit called Zapper™, which has recently been developed by MHI Inc. and the University of Florida, for high temperature thermal processing of semiconductors. This Zapper™ unit is capable of reaching much highertemperatures (>1500°C) than conventional tungsten–halogen lamp RTP equipment and achievinghigh ramp-up and ramp-down rates. We have conducted implant activation annealing studies ofSi⁺-implanted GaN thin films (with and without an AlN encapsulation layer) using the Zapper™ unit at temperatures up to 1500°C. The electrical property measurements of such annealed samples have led to the conclusion that high annealing temperatures and AlN encapsulation are needed for the optimum activation efficiency of Si⁺ implants in GaN. It has clearly been demonstrated that the Zapper™ unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide band-gap (WBG) compound semiconductors that require very high processing temperatures.     

Solar drying vs. open sun drying: A framework for financial evaluation

Initiatives towards large-scale dissemination of solar dryers for drying of agri-produce face severe competition from the largely prevalent practice of open sun drying in most of the developing countries. Therefore, solar drying systems must offer exceptionally attractive financial gains to enhance their acceptance among the potential users. A modest attempt to develop a simple framework to facilitate a comparison of the financial feasibility of solar drying as against open sun drying has been made in the present work. Results of some exemplifying calculations are presented and briefly discussed.     

Freezing-induced splashing during impact of molten metal droplets with high Weber numbers

The impact of molten tin droplets (0.6 mm diameter) on solid surfaces was observed for a range of impact velocities (10–30 m/s), substrate temperatures (25–200 °C) and substrate materials (stainless steel, aluminum and glass). The substrate was mounted on the rim of a rotating flywheel and the collision of single droplets with the moving substrate was photographed. Droplet impact Reynolds number ranged from 2.2 × 10⁴ to 6.5 × 10⁴ and Weber number from 8.0 × 10² to 7.2 × 10³. On a hot surface there was no splashing and droplets spread to form disk-like splats with smooth edges. Solidification around the edges of droplets spreading on cold surfaces created a solid rim that obstructed flow and triggered splashing. An analytical model was developed to predict the transition temperature at which splashing disappeared by assuming that the thickness of the solid layer had to equal that of the splat in the time the droplet spread to its maximum extent in order to obstruct liquid flow. The model predicted the transition temperature for aluminum and stainless steel surfaces, assuming that thermal contact resistance between the droplet and substrate varied between 10⁻⁶ and 10⁻⁷ m² K/W. The model also predicted that tin droplets would not splash on glass surfaces maintained at or above room temperature, and this was confirmed by experiments.     

4D Printing of Shape Memory Materials for Textiles: Mechanism,Mathematical Modeling,and Challenges

Shape memory materials (SMMs) in 3D printing (3DP) technology garnered much attention due to their ability to respond to external stimuli, which direct this technology toward an emerging area of research, “4D printing (4DP) technology.” In contrast to classical 3D printed objects, the fourth dimension, time, allows printed objects to undergo significant changes in shape, size, or color when subjected to external stimuli. Highly precise and calibrated 4D materials, which can perform together to achieve robust 4D objects, are in great demand in various fields such as military applications, space suits, robotic systems, apparel, healthcare, sports, etc. This review, for the first time, to the best of the authors’ knowledge, focuses on recent advances in SMMs (e.g., polymers, metals, etc.) based wearable smart textiles and fashion goods. This review integrates the basic overview of 3DP technology, fabrication methods, the transition of 3DP to 4DP, the chemistry behind the fundamental working principles of 4D printed objects, materials selection for smart textiles and fashion goods. The central part summarizes the effect of major external stimuli on 4D textile materials followed by the major applications. Lastly, prospects and challenges are discussed, so that future researchers can continue the progress of this technology.     

Pad effects on material-removal rate in chemical-mechanical planarization

The role of a porous pad in controlling material-removal rate (MRR) during the chemical-mechanical planarization (CMP) process has been studied numerically. The numerical results are used to develop a phenomenological model that correlates the forces on each individual abrasive particle to the applied nominal pressure. The model provides a physical explanation for the experimentally observed domains of pressure-dependent MRR, where the pad deformation controls the load sharing between active-abrasive particles and direct pad-wafer contact. The predicted correlations between MRR and slurry characteristics, i.e., particle size and concentration, are in agreement with experimentally measured trends reported by Ouma¹ and Izumitani.²