ESR Refining Potential for Titanium Alloys using a CaF2‐based Active Slag

Since the end of the Cold War and due to the needs to produce titanium more cost‐efficient and thus more attractive for its civilian use, the electroslag remelting (ESR) process has become an increasingly important topic of international research programmes, because titanium and titanium aluminides can be chemically refined by ESR in some degree. Using ESR, titanium turnings from machining steps and scrap from foundries can be remelted, refined and provided as secondary titanium for the market at relatively favourable prices. This article investigates the removability of the main impurities out of titanium and titanium‐aluminium alloys by electroslag remelting using the active slag system CaF₂‐Ca‐(CaO). Thermochemical and kinetic aspects of the ESR process are considered.     

Data mining of resilience indicators

In recent years, the Asia-Pacific region has experienced several financial setbacks, including speculative attacks in 1998 and the SARS outbreak in 2003. Financial stresses of this nature are unanticipated, and not all of the dangers can be predicted by the examination of market information and macroeconomic indicators. The Early Warning System (EWS) that has been adopted by the International Monetary Fund may not be able to predict future financial crises for all possible scenarios, because shocks come in many different forms. To supplement the EWS, this paper proposes a data mining framework to measure the resilience of an economy. The resilience framework does not predict a crisis, but rather assesses the current state of health of an economy and its ability to withstand a financial shock should one occur. The framework is based on a feedback system consisting of two stages. The first stage assigns a resilience score to each economy based on a fuzzy logic scoring scheme that is built on the ambiguous reasoning of experts. The second stage uses the classification tree approach to estimate thresholds for each economic indicator, and examines the quality of the fuzzy score. The result from the second stage is then passed back to the first stage as feedback. The final result is obtained when the feedback system reaches its equilibrium state. The proposed resilience framework is applied to the external-sector and the public-sector economies of several countries to illustrate its applicability.     

Novel one-step route for synthesizing sub-micrometer PSt hollow spheres via redox interfacial-initiated method in inversed emulsion

Interfacial-initiated polymerization of styrene (St) was carried out in inversed emulsion with cumene hydroperoxide (CHPO) and ferrous sulfate (FeSO₄)/disodium ethylenediaminetetraacetate (NaEDTA)/sodium formaldehyde sulfoxylate (SFS) as the redox initiation system. The water-soluble Fe²⁺-NaEDTA-SFS acted as the reducing component and the oil-soluble CHPO as the oxidant component of the redox initiation system. Therefore, the primary radicals were produced mainly at the oil/water interface to initiate the polymerization of St. Thus, sub-micrometer hollow polystyrene (PSt) spheres were obtained by one-stage polymerization, which was supported by the techniques of transmission electron microscopy (TEM) and field emission scanning electron microscopy (FESEM).     

N-Type Field-Effect Transistors Using Multiple Mg-Doped ZnO Nanorods

Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO₂ gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10^-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold