基于小波方法的复杂锥筒振动信号降噪处理

介绍了小波变换在振动试验中的应用现状,并运用小波方法对复杂锥筒振动试验的信号进行了降噪分析,从复杂锥筒振动测试信号中分离出真实的振动信号,提出了适合此类振动信号降噪的可行性分析方法,并通过试验数据验证了该方法的正确性和有效性.     

ZnO薄膜的制备和结构性能分析

ZnO作为一种宽带隙半导体材料,近几年来已经成为国际上紫外半导体光电子材料和器件领域的研究热点.激光分子束外延(L-MBE)系统是获得器件级ZnO外延薄膜的先进技术之一.高质量精密ZnO陶瓷靶材对于该工艺的实施是十分关键的,本文中采用高纯原料,在洁净条件下制备了大面积、薄片型、尺寸可控的符合理想化学配比的高纯ZnO陶瓷靶材.采用所制备的靶材,利用L-MBE技术在(0001)蓝宝石基片上进行了ZnO薄膜的外延生长,在280 ℃～300 ℃低温条件下所生长的薄膜样品具有(0001)取向的纤锌矿晶体结构,薄膜光学性能良好,论文中对ZnO薄膜的低温L-MBE生长机理进行了探讨.     

Photoreflectance Spectroscopy for Study of Si/SiGe/Si Heterostructure

UHVCVD-grown Si/Si1- xGex/Si heterostructure was investigated by Photoreflectance spectroscopy (PR). The principle of PR used in semiconductor film was thoroughly described. According to the E1 transition energy in the Si1- xGex alloy, the Ge content in SiGe film with constant composition can be accurately characterized. In this study, determine the composition uniformity of larger diameter SiGe epiwafer by PR mapping technique was determined. These results show PR is very promising for Si1- xGex epilayer characterization with constant Ge content and can provide film measurements for production-worthy line monitor.     

Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate

Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.     

Direct synthesis of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-modified Li(Ni<Subscript>0.5</Subscript>Co<Subscript>0.2</Subscript>Mn<Subscript>0.3</Subscript>)O<Subscript>2</Subscript> cathode materials for lithium ion batteries

To improve the cyclic stability at high temperature and thermal stability, the spherical Al₂O₃-modified Li(Ni_0.5Co_0.2Mn_0.3)O₂ was synthesized by a modified co-precipitation method, and the physical and electrochemical properties were studied. The TEM images showed that Li(Ni_0.5Co_0.2Mn_0.3)O₂ was modified successfully with nano-Al₂O₃. The discharge capacity retention of Al₂O₃-modified Li(Ni_0.5Co_0.2Mn_0.3)O₂ maintained about 99% after 200 cycles at high temperature (55 °C), while that of the bare one was only 86%. Also, unlike bare Li(Ni_0.5Co_0.2Mn_0.3)O₂, the Al₂O₃-modified material cathode exhibited good thermal stability.     

一种基于PCC的立体车库设计

针对城市中日益增长的车辆停放问题,介绍了一种巷道式的立体车库的结构和工作原理以及PCC（可编程计算机控制器）在本立体车库中的应用.详细阐述了这种基于PCC控制的立体车库机械部分和控制系统的设计过程,并对实体车库模型的运行做了分析模拟.     

用计算机由平衡相浓度绘制相图

本文是依据理想溶液的热力学,应用计算机绘制形成完全固溶体(NiO—MgO)的相图。对于这种体系,只要已知形成相图组元的熔点及标准摩尔熔化焓,即可采用本文提出的程序,应用计算机绘制相图。     

一种轴对称结构强度可靠性分析算法

本文提出了一种适合于结构功能函数为非线性,且载荷离差较大,节点载荷之间存在着相关性时,计算轴对称结构可靠度的分析算法.这个算法能充分利用确定性有限元的分析成果,在工程中具有一定的推广价值.     

Design of a 2.5～14.5GHz distributed power amplifier

The operation principle of distributed amplifiers and the impedance characteristic of artificial transmission lines (ATLs) are analyzed, and a distributed power amplifier consisting of three gain cells is designed and fabricated by 0.18μm complementary metal oxide semiconductor (CMOS) technology. The peaking inductor is used to enhance the gain and the reverse isolation of the amplifier in high frequency. The termination loads of ATLs are increased and the values of on-chip inductors are optimized to provide good impedance matching, while improving the output power and efficiency. Measured results show that the amplifier has a 3dB bandwidth of 12GHz (2.5～14.5GHz) and provides an average forward gain of 9.8dB from 3 to 14GHz with a gain flatness of ±1dB. In the desired band, the output power at 1dB gain compression point (P_1dB) is from 4.3 to 10.3dBm while the power added efficiency (PAE) is from 1.7％ to 6.9％.     

Decentralised adaptive control for a class of stochastic switched interconnected nonlinear systems

In this paper, we focus on the problem of adaptive stabilisation for a class of interconnected uncertain switched stochastic nonlinear systems. Classical adaptive and backstepping technique are employed for control synthesis. Instead of estimating the switching parameters directly, we design the adaptive controller based on the estimations of bounds on switching time-varying parameters. A smooth function is introduced to deal with the difficulties caused by unknown interactions and tuning function approach is used to circumvent the overparameter problem. It is shown that under the action of the proposed controller all the signals of the overall closed-loop systems are globally uniformly bounded in probability under arbitrary switching. Simulation results are presented to illustrate the effectiveness of the proposed approach.