闪光灯泵浦Nd3+:GGG激光特性研究

用闪光灯泵浦掺钕钆镓石榴石(Nd^3 ：GGG)激光晶体，研究了脉冲宽度0．5ms、1ms、1．5ms和2ms的放电泵浦下激光输出，实验获得了1．92J的最大激光能量．     

超声波清洗在贵/廉金属复合材料生产过程的应用研究

本文结合“ODS清洗剂消费淘汰项目”的实施，并对新型超声波清洗机及新型ODS清洗液进行了工艺试验，阐述了超声波清洗技术是贵／廉金属复合材料生产过程中无可替代的清洗技术。     

珠光体球化的分形研究

珠光体球化反映到金相上，是一种不规则图像的变化，并且具有分形的特征，可望用分形几何的方法来进行描述。以Cr-Mo钢的珠光体球化为例，用分形维数来描述珠光体球化程度；用小岛法对15CrMo钢的珠光体球化图谱进行了测量。实验表明，珠光体球化从1级到6级，其相应的分形维数范围为1.3156-1.9282。从电厂运行了10^5h的15CrMo钢管上取样，实测了该试样的珠光体球化等级，结果表明，以分形维数表示的球化程度与按图谱评定的球化等级完全吻合。     

一种基于H.235协议的关守消息认证机制

首先对基于用户秘密散列签名的关守消息认证机制做了简单介绍,然后针对该机制的不足之处提出了一种基于H.235协议的改进方法,具有安全性高,速度快,管理方便等优点.     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

三相分离器的油水界面和压力的计算机解耦控制

本文应用解耦理论对原油脱水用的三相分离器进行的计算机控制的设计、仿真和实时控制进行了探讨。经现场调试运行,取得了较好的控制质量。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Evaluating the impact of CASE: an empirical comparison of retrospective and cross-sectional survey approaches

The purpose of this paper is to evaluate two methods of assessing the productivity and quality impact of Computer Aided Software Engineering (CASE) and Fourth Generation Language (4GL) technologies: (1) by the retrospective method; and (2) the cross-sectional method. Both methods involve the use of questionnaire surveys. Developers' perceptions depend on the context in which they are expressed and this includes expectations about the effectiveness of a given software product. Consequently, it is generally not reliable to base inferences about the relative merits of CASE and 4GLs on a cross-sectional comparison of two separate samples of users. The retrospective method that requires each respondent to directly compare different products is shown to be more reliable. However, there may be scope to employ cross-sectional comparisons of the findings from different samples where both sets of respondents use the same reference point for their judgements, and where numerical rather than verbal rating scales are used to measure perceptions.