Criteria for evaluation of the hardening factor of machine parts

V. Ya. Chubar' Zaporozhe Machine Building Institute. Translated from Problemy Prochnosti, No. 3, pp. 62–65, March, 1989.     

The solution of the inverse problem of gravitational potential using a set of measurements of different field elements

A numerical solution of the inverse problem of the gravitational field at a single point is obtained using six field elements for a point, a spherical cap, a differential spherical sector and a vertical segment. In the system of six equations obtained, the unknowns are the mass of the body, the depth of its center, and the second, third, and fourth degree moments. The accuracy of the solution of this system is ten times higher than when using three field elements. __________ Translated from Izmeritel’naya Tekhnika, No. 5, pp. 3–8, May, 2007.     

Vibrating Wire Thermometry in Superfluid 3He

We report systematic measurements of the response of a Vibrating Wire Resonator (VWR) in normal and superfluid liquid ³He. Special attention has been paid to the hydrodynamic regime of the superfluid B-phase, where the response parameters of the VWR do not follow a simple law. We show that a simple interpolation between the region where first order slip-corrections can be applied and the ballistic regime is insufficient. Measuring an empirical effective viscosity, we propose a temperature calibration method which allows the use of VWRs as a secondary thermometer at intermediate and high pressures in the temperature range 0.2 T _c < T < 50 mK.     

Mechanochemical reactions between structural defects in magnetic fields

An influence of steady, pulse and microwave magnetic fields on mechanochemical reactions between structural defects in doped ionic crystals has been studied. The effects of dislocation depinning, dislocation mobility increase, macroplastic unhardening and magnetoresonant softening in magnetic fields have been revealed. It is shown that the magnetosensitive spin-dependent reactions between structural defects is the reason of magnetoplastic effects in nonmagnetic crystals. It means that the electron and nuclear spin states of the paramagnetic defects play an important role in the formation of mechanical properties of crystals in magnetic fields and without them.     

Fine Purification of Monoisotopic Silanes 28SiH4 , 29SiH4 , and 30SiH4 via Distillation

High-purity isotopically enriched (99.98% ²⁸Si, 99.57% ²⁹Si, and 99.83% ³⁰Si) silane samples are prepared for the first time. The total hydrocarbon content of the samples is no higher than 0.1–0.3 ppm. The concentration of electroactive impurities in the silicon prepared from the purified monoisotopic silane is below 10¹⁵ cm^–3.     

Preparation and Properties of Er- and Yb-Activated TeO2–WO3 Glasses

TeO₂–WO₃ glasses coactivated with Er³⁺ and Yb³⁺ are prepared. The effect of Yb content on the efficiency of Er photoluminescence (PL) in the visible and IR spectral regions is studied. The highest PL efficiency is achieved at an Er : Yb atomic ratio of 1 : 1. The PL lifetime for the Er^{3+ 4} I _13/2 level is determined to be 7–9 ms.     

High-strain-rate superplasticity of nanocrystalline aluminum alloy 1570

The structure and mechanical properties of nanocrystalline aluminum alloy 1570 obtained by means of severe plastic deformation have been studied. Being tested in a temperature range from 300 to 400°C, the alloy exhibits high-strain-rate superplasticity. At 400°C, the superplasticity is manifested in a very broad range of strain rates, extending from 5 × 10^?3 to 1 s^?1.     

Studying chaotic microwave oscillations in a TWO with depressed collector

Broadband chaotic oscillations were monitored in a depressed potential collector of a traveling-wave oscillator (TWO). This signal appears due to the oscillations of a virtual cathode, which is formed in the spent electron beam under the action of retarding fields existing in the multistage depressed collector.     

Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices

The optical properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices have been studied. It is demonstrated that, using such superlattices of various design and thickness and with additional InAs monolayer spacers, it is possible to control the wavelength of room-temperature emission from InGaAsN quantum wells within 1.3–1.6 μm without deteriorating the output radiation characteristics, which opens additional prospects for the development of lasers on GaAs substrates for telecommunication applications.