Adaptive random access and resource allocation scheme based on traffic load in HiperLAN type2 system

The MAC protocol of HiperLAN type2 is based on TDMA/TDD and provides access control and resource allocation schemes. We propose a scheme that provides adaptive random access and efficient resource allocation according to the traffic load for HiperLAN type2, by using access probability. The analysis and simulation results show that the proposed scheme performs better than the conventional scheme and supports priority services easily.     

Performance Analysis on Coexistence of EDCA and Legacy DCF Stations in IEEE 802.11 Wireless LANs

The distributed coordination function (DCF) scheme of IEEE 802.11 MAC protocol does not support any concepts of quality of service (QoS) but the enhanced distributed channel access (EDCA) scheme in IEEE 802.11e standard provides QoS according to access categories using different access parameters. However, the legacy DCF stations may be used together with EDCA stations. In this letter, we investigate and analyze the performance discrimination when EDCA and DCF stations operate simultaneously     

Excellent Switching Uniformity of Cu-Doped $hbox{MoO}_{x}/hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

We have investigated a Cu-doped MoO_x/GdO_x bilayer film for nonvolatile memory applications. By adopting an ultrathin GdO_x layer, we obtained excellent device characteristics such as resistance ratio of three orders of magnitude, uniform distribution of set and reset voltages, switching endurance up to 10⁴ cycles, and ten years of data retention at 85degC. By adopting bilayer films of Cu-doped MoO_x/GdO_x, a local filament was formed by a two-step process. Improved memory characteristics can be explained by the formation of nanoscale local filament in the ultrathin GdO_x layer.     

Photocurable propyl-cinnamate-functionalized polyhedral oligomeric silsesquioxane as a gate dielectric for organic thin film transistors

A polyhedral oligomeric silsesquioxane (POSS)-based insulating material with photocurable propyl-cinnamate groups (POSS-CYNNAM) was designed and synthesized through simple single step reaction for use as a gate dielectric in organic thin-film transistors (OTFT). POSS-CYNNAM was soluble in common organic solvents and formed a smooth thin film after spin-casting. A thin film of POSS-CYNNAM was cross-linked and completely solidified under UV irradiation without the use of additives such as photoacid generators or photoradical initiators. ITO/insulator/Au devices were fabricated and characterized to measure the dielectric properties of POSS-CYNNAM thin films, such as leakage current and capacitance. A pentacene-based OTFT using the synthesized insulator as the gate dielectric layer was fabricated on the transparent indium tin oxide (ITO) electrode, and its performance was compared to OTFTs using thermally cross-linked poly(vinyl phenol) (PVP) as the insulator. The fabricated POSS-CYNNAM OTFT showed a comparable performance to devices based on the PVP insulator with 0.1 cm²/Vs of the field effect mobility and 4.2 × 10⁵ of an on/off ratio.     

Statistical Characterization of Open Failures in the Fine-Pitch COG Interconnection

Chip-on-glass (COG) interconnection using anisotropic conductive film (ACF) is susceptible to open failures. Open failures can be induced by the absence of conductive particles or an insufficient contact. Experimental results as well as statistical approaches were used to understand the conditions for open failures in COG bonding. The binomial distribution was used to predict the probability of the open failure due to the deficiency of conductive particles. The probability of an open failure decreased with increasing bump area and decreasing particle size. The bump height variation was also an important factor that affected the probability of the open failure together with the bump-to-electrode gap and the particle size. The variation in bump height should be minimized to avoid open failures in fine-pitch applications where a smaller particle size is required.     

A new MMIC broadside coupler using an array of air-bridges for directivity enhancement

A new quadrature broadside coupler is proposed, which employs an array of air-bridges to enhance directivity via its phase-equalization effect on the c-mode and /spl pi/-modes. The realization of air-bridges follows a standard MMIC fabrication process. An experimental chip fabricated on the 75-/spl mu/m GaAs substrate verifies the air-bridge effect and shows wideband characteristics of the coupling of 3.2/spl plusmn/0.4 dB, the insertion loss of 3.9/spl plusmn/0.4 dB, the output phase deviation from quadrature less than 6/spl deg/, and the isolation greater than 18 dB from 20 to 40 GHz.     

Achieving Narrow FWHM and High EQE Over 38% in Blue OLEDs Using Rigid Heteroatom-Based Deep Blue TADF Sensitized Host

Simultaneously obtaining high efficiency and deep blue emission in organic light emitting diodes (OLEDs) remains a challenge. To overcome the demands associated with deep blue thermally activated delayed fluorescence (TADF) emitters, two deep blue TADF materials namely, DBA–BFICz and DBA–BTICz, are designed and synthesized by incorporating oxygen-bridged boron (DBA) acceptor with heteroatoms, oxygen and sulphur-based donors, BFICz and BTICz, respectively. Both TADF materials show deep blue photoluminescence emissions below 450 nm by enhancing the optical band gap over 2.8 eV through deeper highest occupied molecular orbital (HOMO) level of heteroatom based donor moieties. At the same time, the photoluminescence quantum yields (PLQYs) of both TADF materials remain over 94%. The TADF device with DBA–BFICz as an emitter exhibits a good external quantum efficiency (EQE) of 33.2%. Since both new TADF materials show deep blue emissions and high efficiencies, hyperfluorescence (HF) OLED devices are fabricated using ν-DABNA as a fluorescence dopant. DBA–BFICz as a TADF sensitized host in HF–OLED reveals an outstanding EQE of 38.8% along with narrow full width at half maximum of 19 nm in the bottom emission pure blue OLEDs. This study provides an approach to develop deep blue TADF emitters for highly efficient OLEDs.     

DFR: an efficient directional flooding‐based routing protocol in underwater sensor networks

Unlike terrestrial sensor networks, underwater sensor networks (UWSNs) have salient features such as a long propagation delay, narrow bandwidth, and high packet loss over links. Hence, path setup‐based routing protocols proposed for terrestrial sensor networks are not applicable because a large latency of the path establishment is observed, and packet delivery is not reliable in UWSNs. Even though routing protocols such as VBF (vector based forwarding) and HHVBF (hop‐by‐hop VBF) were introduced for UWSNs, their performance in terms of reliability deteriorates at high packet loss. In this paper, we therefore propose a directional flooding‐based routing protocol, called DFR, in order to achieve reliable packet delivery. DFR performs a so‐called controlled flooding, where DFR changes the number of nodes which participate in forwarding a packet according to their link quality. When a forwarding node has poor link quality to its neighbor nodes geographically advancing toward the sink, DFR allows more nodes to participate in forwarding the packet. Otherwise, a few nodes are enough to forward the packet reliably. In addition, we identify two types of void problems which can occur during the controlled flooding and introduce their corresponding solutions. Our simulation study using ns‐2 simulator proves that DFR is more suitable for UWSNs, especially when links are prone to packet loss. Copyright © 2011 John Wiley & Sons, Ltd.     

An investigation of surface state capture cross-sections for metal–oxide–semiconductor field-effect transistors using HfO2 gate dielectrics

MOSFETs and MOSCs incorporating HfO₂ gate dielectrics were fabricated. The I_DS–V_DS, I_DS–V_GS, gated-diode and C–V characteristics were investigated. The subthreshold swing and the interface trap density were obtained. The surface recombination velocity and the minority carrier lifetime in the field-induced depletion region measured from the gated diodes were about 2.73 × 10³ cm/s and 1.63 × 10⁻⁶ s, respectively. The effective capture cross section of surface state was determined to be 1.6 × 10⁻¹⁵ cm² using the gated-diode technique in comparison with the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO₂ gate oxide was also made.     

Co‐tier downlink interference management in dense femtocell networks

With the adoption of long‐term evolution standard for 4G mobile communications, the deployment of femtocell base stations (FBSs) to cope with the surging traffic in mobile wireless communication is becoming increasingly popular. However, with the random installation of FBSs, the problem of interference among FBSs is still a challenge. In this paper, assuming the presence of a femtocell management system that can control and coordinate the densely deployed FBSs, a novel power backoff scheme is proposed that determines the appropriate transmit power of each FBS so that the interference is reduced. Simulation results for randomly deployed FBSs in an environment with shadowing using MATLAB are provided, showing that our proposed methods can effectively mitigate the co‐tier downlink interference while improving the system capacity in a densely deployed femtocell network with shared spectrum use. Quantitatively, the average interference is reduced by roughly 90% to 100% of dBm, and the average capacity is increased by more than 80%. These results attest to the effectiveness of the proposed scheme.