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81.
Haitao Zhang Zonghai Chen Yongji Wang Ming Li Ting Qin 《International Journal of Adaptive Control and Signal Processing》2006,20(2):53-76
Laguerre Functional Model has many advantages such as good approximation capability for the variances of system time‐delay, order and other structural parameters, low computational complexity, and the facility of online parameter identification, etc., so this model is suitable for complex industrial process control. A series of successful applications have been gained in linear and non‐linear predictive control fields by the control algorithm based on Laguerre Functional Model, however, former researchers have not systemically brought forward the theoretical analyses of the stability, robustness, and steady‐state performance of this algorithm, which are the keys to guarantee the feasibility of the control algorithm fundamentally. Aimed at this problem, we introduce the principles of the Incremental Mode Linear Laguerre Predictive Control (IMLLPC) algorithm, and then systemically propose the theoretical analyses and proofs of the stability and robustness of the algorithm, in addition, we also put forward the steady‐state performance analysis. At last, the control performances of this algorithm on two different physical industrial plants are presented in detail, and a number of experimental results validate the feasibility and superiority of IMLLPC algorithm. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
82.
STUDYONRESIDUESOF~(14)C-FENITROTHIONINMODELRICE-FISHECOSYSTEMANDFIELDRICE-FISHECOSYSTEMZhangZhongliang(张仲良);WangHuaxin(王化新);G?.. 相似文献
83.
Wang F.-Y. Gildea K. Jungnitz H. Chen D.D. 《Industrial Electronics, IEEE Transactions on》1994,41(6):641-653
The manufacturing message specification (MMS) is the ISO standard communication protocol specific to manufacturing. To analyze MMS design and performance, service unit automats are introduced to represent individual MMS services, while service connection Petri Nets (PNs) are constructed from these automats to describe MMS service connections and processes. This approach makes MMS protocol specification and analysis possible in terms of well-developed concepts and methods in PN theory. It leads to a distributed and hierarchical model of MMS software system by integrating service connection PNs. A generalized stochastic PN for MMS performance evaluation is obtained by incorporating service parameters and time factors into the model. A technique based on T-invariants is used to simplify the performance analysis 相似文献
84.
Ma Z.J. Chen J.C. Liu Z.H. Krick J.T. Cheng Y.C. Hu C. Ko P.K. 《Electron Device Letters, IEEE》1994,15(3):109-111
It has been reported that high-temperature (~1100°C) N2 O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N2O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO2 interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO2 interface is essential to effectively prevent boron diffusing into the underlying silicon substrate 相似文献
85.
Shye Lin Wu Chung Len Lee Tan Fu Lei Chen C.F. Chen L.J. Ho K.Z. Ling Y.C. 《Electron Device Letters, IEEE》1994,15(4):120-122
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device 相似文献
86.
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89.
Load-capacity interference and the bathtub curve 总被引:1,自引:0,他引:1
Load-capacity (stress-strength) interference theory is used to derive a heuristic failure rate for an item subjected to repetitive loading which is Poisson distributed in time. Numerical calculations are performed using Gaussian distributions in load and capacity. Infant mortality, constant failure rate (Poisson failures), and aging are shown to be associated with capacity variability, load variability, and capacity deterioration, respectively. Bathtub-shaped failure rate curves are obtained when all three failure types are present. Changes in load or capacity distribution parameters often strongly affect the quantitative behavior of the failure-rate curves, but they do not affect the qualitative behavior of the bathtub curve. Neither is it likely that the qualitative behavior will be affected by the use of nonGaussian distributions. The numerical results, however, indicate that infant mortality and wear-out failures interact strongly with load variability. Thus bathtub curves arising from this model cannot be represented as simple superpositions of independent contributions from the three failure types. Only if the three failure types arise from independent failure mechanisms or in different components is it legitimate simply to sum the failure rate contributions 相似文献
90.
Mingcho Wu Yung Jui Chen 《Lightwave Technology, Journal of》1994,12(11):1939-1942
Design issues of photonic integrated devices for WDM applications based on Rowland circle gratings have been studied. Effects of grating period, diffraction order, grating aperture (size), and Rowland circle size on device performance are discussed. The point spread function of a typical Rowland circle grating is evaluated numerically which yields an optical image (spot) size of several microns in diameter. Our study shows that there is a tradeoff between channel dispersion and feedback efficiency in choosing the grating period when a Rowland circle grating is used as the wavelength-selective element for a parallel-waveguide-type wavelength division multiplexing device 相似文献