国外尾矿坝安全与环境研究综述

安全与环境一直是国外尾矿坝研究的重点。笔者综述了自1990年以来国外涉及尾矿坝安全与环境方面有代表性的文献 ,内容包括尾矿坝溃坝、溃坝理论研究、安全管理、环境污染、污染监测、污染治理、污染理论研究及生态复垦 ,这些对提高我国尾矿坝管理、工程技术水平都有较好的参考价值     

Developing Cost Response Models for Company-Level Cost Flow Forecasting of Project-Based Corporations

The difficulty in applying the standard curve (S-curve) and cost-schedule integration (CSI) techniques for company-level cost flow forecasting in a project-based industry is the prerequisite of forecasting future unknown individual projects and contract classifications. By analyzing cost flows at the company level through a pool of macroeconomic and internal financial data, this paper proposes an innovative approach to firm-specific model estimation. First, a series of data transformations introduce linear relationships between cost, macroeconomic, and internal financial variables. Second, multivariate regression analysis is employed for initial model building. Third, for the purposes of model restructuring, a subsequent application of Yule–Walker estimates and incomplete principal component analysis is used. This paper uses a sample of four project-based construction firms to demonstrate model performance. Using this methodology, mean absolute percentage error (MAPE) values of the forecasting models range from 0.27 to 0.60%. As such, the transformed cost, macroeconomic, internal financial data could strongly predict company-level cost flow forecasting. While converting the predicted cumulative cost data to periodic cost flows, the MAPE values were augmented, ranging from 7.04 to 17.55%, thus, requiring future research.     

井冈山水厂设计体会

阐述水厂设计中对水厂规模、水源地、净水厂位置及净水工艺的确定过程，根据原水的特点，通过分析对无阀滤池进行改良。     

煤气吹扫时惰性气体抑爆用量的优选

运用惰性气体消防抑爆理论，采用数学积分法计算出吹扫煤气设施时抑爆所需最少惰性气体需要量．     

机械合金化过程中Fe70B30粉末晶粒尺寸和微观应变的研究

用Ｘ射线和电镜研究了Ｆｅ＿（７０）Ｂ＿（３０）粉末经不同时间高能球磨后晶粒尺寸和微观应力的变化。在机械合金化过程中，粉末的Ｘ射线衍射谱的宽度随球磨时间的增加逐渐加宽，这是晶粒细化和内部微观应力共同作用的结果。Ｘ射线衍射结果表明：随着机械合金化的进行，粉末的晶粒尺寸逐渐减小，球磨初期晶粒尺寸下降较快，经１５ｈ球磨，晶粒尺寸为２５ｎｍ，机械合金化进行到一定时间后晶粒尺寸下降缓慢，８０ｈ球磨后晶粒尺寸可达５ｎｍ。在机械合金化过程中球磨所造成的微观应变不大，球磨初期粉末的内应力随球磨时间增加而增加，当粉末粒子尺寸很小时，随球磨的进行粉末中的微观应变显著下降。     

A MULTIAXIAL FATIGUE DAMAGE MODEL FOR ORTHOTROPIC MATERIALS UNDER PROPORTIONAL LOADING

A new multiaxial fatigue damage model for orthotropic materials is proposed based on the strain vector. Six material constants are included in the model. These material constants represent the dependence of fatigue resistance on material orientation, and they can be obtained by conducting strain-controlled uniaxial fatigue tests along the three principal orthotropic directions of an orthotropic material. The model can also be transformed in new coordinate systems to predict the fatigue lives of new material orientations. Biaxial low-cycle fatigue tests are conducted to verify the model. The prediction of the model agrees with the experimental results reasonably well.     

Enhanced electron emission from phosphorus-doped diamond-cladsilicon field emitter arrays

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities     

Multiple negative-differential-resistance (MNDR) phenomena of ametal-insulator-semiconductor-insulator-metal (MISIM)-like structurewith step-compositioned InxGa1-xAs quantum wells

In this paper, a new multiple negative-differential-resistance (MNDR) device based on a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositional In_xGa_1-x As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviours and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristic are observed at -105°C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has good potential in multiple-valued logic applications     

Inductively coupled plasma etching of InGaP, AllnP, and AlGaP in Cl2 and BCl3 chemistries

Dry etching of InGaP, AlInP, and AlGaP in inductively coupled plasmas (ICP) is reported as a function of plasma chemistry (BCl₃ or Cl₂, with additives of Ar, N₂, or H₂), source power, radio frequency chuck power, and pressure. Smooth anisotropic pattern transfer at peak etch rates of 1000–2000Å·min^?1 is obtained at low DC self-biases (?100V dc) and pressures (2 mTorr). The etch mechanism is characterized by a trade-off between supplying sufficient active chloride species to the surface to produce a strong chemical enhancement of the etch rate, and the efficient removal of the chlorinated etch products before a thick selvedge layer is formed. Cl₂ produces smooth surfaces over a wider range of conditions than does BCl₃.