Patient thermal comfort requirement for hospital environments in Taiwan

This study examines the comfort criteria of ASHRAE Standard 55-2004 for their applicability in hospital environments. Through an extensive field survey conducted in a university hospital in Taiwan, 927 sets of data have been collected. Above half of the measured samples failed to meet the specifications of Standard 55 comfort zone due to improper humidity control. Acceptability votes by patients exceeded the Standard's 80% criterion, regardless of whether the physical conditions were in or out of the comfort zone. Thermal neutrality, preference and comfort range are compared with other studies conducted in office environments and Standard 55 criteria. Results of chi-square tests revealed that patients’ physical strength significantly effected their thermal requirements. The net effect of health yields a marked difference in thermal neutrality and preference, and also in the comfortable temperature range.     

Highly active lanthanum doped nickel anode for solid oxide fuel cells directly fuelled with methane

Lanthanum doped nickel and YSZ composite anode (LaNi–YSZ) exhibited a greatly reduced polarization resistance and high performance for electrochemical oxidation of hydrogen and methane, which resulted from a fine anode structure with a high dispersion of nickel catalyst and a high catalytic activity towards methane.     

Ni-Mo-O催化剂中协同作用对丙烷氧化脱氢的影响

在 Ni-Mo-O体系中 ,加入 Mo O3 能极大地提高丙烷氧化脱氢制丙烯的反应活性。选用固混法、沉淀法、柠檬酸法制备了 Mo O3 过量 1 5 % (摩尔分数 )的α -Ni Mo O4催化剂 ,其中用沉淀法制得催化剂在 5 0 0℃ ,V( C3 H8) /V ( O2 ) /V ( N2 ) =1 0 /1 0 /5 0 ,反应气流量为 70 m L/min的条件下丙烷转化率可达 38.7% ,丙烯选择性达 70 .1 4 %。经 XRD,XPS,TPR表征说明 ,在含有过量 Mo O3 的催化剂中 ,α -Ni Mo O4与 Mo O3 两种晶体之间可产生微小的相互吸引 ;从而发挥协同作用 ,是提高催化剂活性     

油田放射性作业人员外周血淋巴细胞染色体畸变的观察

本文调查了油田212例受γ射线和中子混合辐射照射的作业人员和30例正常人的外周血淋巴细胞染色体畸变。作业人员受γ射线照射的人均年受照剂量为1.28mGy。调查结果表明,放射性测井人员与正常人相比染色体畸变率有显著差异。     

CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY

Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.     

关于非线性浅水波理论中的孤立波解

本文在[1]的基础上,详尽地得到了Boussinesq方程和KdV方程的孤立波解,并对波高和波形进行了细致的分析。为了更好地比较,本文还给出了高阶摄动的孤立波解。     

圩区排涝模数计算方法研究

合理确定圩区排涝模数对于降低涝灾损失有重要意义。圩区内土地利用性质的不同,会导致产汇流机制和排涝标准的不同,但排涝模数的计算方法基本一致。本文根据圩区下垫面条件进行产汇流计算,入河流量扣除滞蓄量得到排涝模数,充分考虑到圩内河道的调蓄作用。以常熟市为例,对城镇圩区、农业圩区排涝模数进行计算,并分析了两种圩区不同的排涝要求对排涝模数计算方法的影响。     

我国有线电视事业的现状和发展

本文详细系统地介绍了我国有线是视发展历史和现状，及其经营和管理方法。重点介绍了北美的ＣＡＴＶ技术发展动向。最后，指出我国ＣＡＴＶ事业发展中的应用重视的问题。     

A Petri net based approach to modeling and scheduling for an FMSand a case study

In this paper, a timed-place Petri net (TPPN) model for flexible manufacturing systems (FMSs) is constructed, which contains two major submodels: the stationary transportation model; and the variable process flow model. For multiple automated guided vehicle (AGV) systems, the authors embed a simple rule and introduce a push-AGV strategy in a TPPN model to solve the collision and traffic jam problems of such vehicles. Since a firing sequence of the TPPN from the initial marking to the final marking can be seen as a schedule of the modeled FMS, by using an A^* based search algorithm, namely, the limited-expansion A algorithm, an effective schedule of the part processing can be obtained. To show the promising potential of the proposed work, a prototype FMS is used as a target system for implementation. The experiment results assert that the job-shop scheduling problem can always be satisfactorily solved     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate