Fast‐scale bifurcation in power‐factor‐correction buck‐boost converters and effects of incompatible periodicities

In this paper, we derive the discrete‐time model for the power‐factor‐correction (PFC) buck‐boost converter in terms of a stroboscopic switching map. Fast‐scale instability is analysed through a fold diagram, which exposes the periodicity of the operation as well as the locations of the critical phase angles of the line voltage at which instability begins to occur along a half‐line cycle. The asymmetrical locations of the critical phase angles along a half‐line cycle is explained in terms of ‘under‐developed’ bifurcation. Border collision bifurcations are observed and analysed in detail. Copyright © 2006 John Wiley & Sons, Ltd.     

New compact wideband bandpass filter using three parallel-coupledlines

A new miniature bandpass filter, comprising three-conductor short-circuited spurline resonators of approximately a quarter-wavelength long, with a very wide bandwidth approaching multioctaves is reported for the first time. The chain matrix of the filter resonator is derived. The new filter has been developed using microstrip line with less than 1 dB insertion loss over a passband from 2 to 8 GHz. Reasonably good agreement between the measured and calculated results is observed     

Structure and Magnetic Properties of LaCo_(13-X)M_X Intermetallic Compounds

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短毫米波和亚毫米波接收机的发展现状

本文概述了短毫米和亚毫米波接收机的发展现状，介绍了接收机的重要组成部件：混频器、振荡器和放大器的发展水平以及毫米波单片集成电路的现状，给出了接收机的最新性能指标。     

CALCULATION ON TWO-PHASE FLOW TRANSIENTS AND THEIR EXPERIMENTAL RESEARCH

From basic equations of gas-liquid, solid-liquid, solid-gas two-phase flow, the calculating method on flow transients of two-phase flow is developed by means of characteristic method. As one example, a gas-liquid flow transient is calculated and it agrees well with the experimental result. It is shown that the method is satisfactory for engineering demand.     

A quadruple well, quadruple polysilicon BiCMOS process for fast 16Mb SRAM's

An advanced, high-performance, quadruple well, quadruple polysilicon BiCMOS technology has been developed for fast 16 Mb SRAM's. A split word-line bitcell architecture, using four levels of polysilicon and two self-aligned contacts, achieves a cell area of 8.61 μm² with conventional I-line lithography and 7.32 μm² with I-line plus phase-shift or with deep UV lithography. The process features PELOX isolation to provide a 1.0 μm active pitch, MOSFET transistors designed for a 0.80 μm gate poly pitch, a double polysilicon bipolar transistor with aggressively scaled parasitics, and a thin-film polysilicon transistor to enhance bitcell stability. A quadruple-well structure improves soft error rate (SER) and allows simultaneous optimization of MOSFET and bipolar performance     

Parasitic bipolar gain in fully depleted n-channel SOI MOSFET's

Fully depleted SOI MOSFET's include an inherent parasitic lateral bipolar structure with a floating base. We present here the first complete physically based explanation of the bipolar gain mechanism, and its dependence on bias and technological parameters. A simple, one-dimensional physical model, with no fitting parameters, is constructed, and is shown to agree well with simulations and measurements performed on a new type of SOI MOSFET structure. It is shown that parameters which affect the gain, such as SOI layer thickness, body doping concentration and gate and drain voltages, do so primarily by affecting the concentration of holes in the body region. Thus, current gain falls dramatically with increasing drain voltage due to the associated impact ionization driven increase in the hole concentration. Gummel plots of this parasitic bipolar indicate an apparent ideality factor of 0.5 for the hole current, due to the body hole concentration's dependence on drain voltage     

Fabrication of low-loss IR-transmitting Ge30As10Se30Te30 glass fibers

Improved purification and processing techniques have been utilized to fabricate Ge₃₀As₁₀Se₃₀Te₃₀ glass fibers with a minimum loss of O.11 dB/m at 6.6 μm. This is the lowest loss reported for any telluride glass fiber in the infrared region. Furthermore, the fibers exhibit less than 1 dB/m loss between 5.25 and 9.5 μm     

新型处理药剂（EP-110）处理各种重金属离子的实验研究

各行各业生产过程中会产生大量废水,重金属离子污染物是其中的重要控制指标,传统的处理方法不能完全解 决这类污染。本文通过大量的实验数据,对新型的处理药剂(EP-110)处理各种重金属离子的性能做了全面的测试、分析,并 提出了使用方法。