Performance of Efficient Signal Detection for LED-ID Systems

In this paper, effects of reader-to-reader interference are investigated for LED identification (LED-ID) system in a multi-reader environment. The LED-ID readers typically use different channels to avoid collision between readers. However, in-channel collision usually happens in terms of interrogation range. A reader-to-reader interference scenario is proposed, and nominal interrogation range of a desired reader is derived from this model. In order to evaluate the LED-ID reader-to-reader interference quantitatively, an efficient detection scheme is proposed and simulated by employing spreading sequence. The spreading sequence is inserted between each user’s frame formats. In the receiver, the desired signal is detected by using correlation among inserted spreading sequences. From simulation results, it is confirmed that the proposed scheme is very effective to enhance reliability of LED-ID communication systems.     

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.     

Design and Fabrication of ZnO-Based FBAR Microwave Devices for Mobile WiMAX Applications

In this letter, we present the design and fabrication of a novel ZnO-based film bulk acoustic wave resonator (FBAR) microwave devices. The novel FBAR devices employ a new-type of Bragg reflector with very thin chromium (Cr) layer formed between SiO₂ and W films. The Cr layer seems to enhance the adhesion between SiO₂ and W layers. The novel FBAR devices show good return losses (S₁₁) and high Q-factors at the frequency range of 2.7-3.0 GHz. This approach will be very helpful for mobile worldwide interoperability for microwave access applications.     

Improvement of the cell performance in the ZnS/Cu(In,Ga)Se2 solar cells by the sputter deposition of a bilayer ZnO : Al film

ZnS is a candidate to replace CdS as the buffer layer in Cu(In,Ga)Se₂ (CIGS) solar cells for Cd‐free commercial product. However, the resistance of ZnS is too large, and the photoconductivity is too small. Therefore, the thickness of the ZnS should be as thin as possible. However, a CIGS solar cell with a very thin ZnS buffer layer is vulnerable to the sputtering power of the ZnO : Al window layer deposition because of plasma damage. To improve the efficiency of CIGS solar cells with a chemical‐bath‐deposited ZnS buffer layer, the effect of the plasma damage by the sputter deposition of the ZnO : Al window layer should be understood. We have found that the efficiency of a CIGS solar cell consistently decreases with an increase in the sputtering power for the ZnO : Al window layer deposition onto the ZnS buffer layer because of plasma damage. To protect the ZnS/CIGS interface, a bilayer ZnO : Al film was developed. It consists of a 50‐nm‐thick ZnO : Al plasma protection layer deposited at a sputtering power of 50 W and a 100‐nm‐thick ZnO : Al conducting layer deposited at a sputtering power of 200 W. The introduction of a 50‐nm‐thick ZnO : Al layer deposited at 50 W prevented plasma damage by sputtering, resulting in a high open‐circuit voltage, a large fill factor, and shunt resistance. The ZnS/CIGS solar cell with the bilayer ZnO : Al film yielded a cell efficiency of 14.68%. Therefore, the application of bilayer ZnO : Al film to the window layer is suitable for CIGS solar cells with a ZnS buffer layer. Copyright © 2012 John Wiley & Sons, Ltd.     

Studies on the performance characteristics and improvements of the piezoelectrically-driven micro gas compressors

This study presents the main characteristics of a micro gas compressor produced by microfabrication techniques on silicon wafers. The compressor consists of a compression chamber, check valves and a silicon membrane where the piezoelectric bimorph actuator is installed. Compressor performance was investigated under various working conditions of input voltage and frequency to the actuator at several downstream back pressures. Volume stroke ratio is a critical parameter for gas compressors. However, micro actuators do not generally produce large displacement, so the volume stroke ratio of the micro compressor is expected to be significantly less than that of conventional mechanical compressors. Therefore, the possibility of using dual compression was also investigated in order to improve micro compressor performance. The performance of the micro compressor is evaluated in this study through experiments and simulation.     

Analysis of the hemispheric asymmetry using fractal dimension of a skeletonized cerebral surface

We investigated hemispheric asymmetry using the fractal dimension (FD) of the skeletonized cerebral surface. Sixty-two T1-weighted magnetic resonance imaging volumes from normal Korean adults were used. The skeletonization of binary volume data, which corresponded to the union of the gray matter and cerebrospinal flow classified by fuzzy clustering, was performed slice by slice in the sagittal direction, and then skeletonized slices were integrated into the three-dimensional (3-D) hemisphere. Finally, the FD of the 3-D skeletonized cerebral surface was calculated using the box-counting method. We measured the FD of the skeletonized cerebral surface and the volumes of intracranial gray matter and white matter for the whole hemispheres and obtained the hemispheric asymmetries of each measurement. The FD, the gray matter, and the white matter volumes for the whole hemispheres decreased in the old group. The asymmetry of the FD revealed a significant right-greater-than-left asymmetry showed rightward, but did not change according to age and gender. None of the intracranial gray matter or white matter volumes showed any significant asymmetric changes. It could be said that the FD of the skeletonized cerebral surface is a novel measure of cerebral asymmetry.     

Area-efficient correlated double sampling scheme with single sampling capacitor for CMOS image sensors

An area-efficient correlated double sampling (CDS) circuit is proposed. In conventional designs, most of the area of CDS circuits is occupied by two large on-chip sampling capacitors. A new CDS scheme is devised using only one sampling capacitor. The proposed CDS circuit has been successfully realised in a small two column pitch of 7.2 /spl mu/m in a test chip fabricated using 0.18 /spl mu/m CMOS process and has demonstrated fixed pattern noise less than 0.46%.     

Highly Customizable All Solution–Processed Polymer Light Emitting Diodes with Inkjet Printed Ag and Transfer Printed Conductive Polymer Electrodes

Inkjet and transfer printing processes are combined to easily form patterned poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) films as top anodes of all solution–processed inverted polymer light emitting diodes (PLEDs) on rigid glass and flexible plastic substrates. An adhesive PEDOT:PSS ink is formulated and fully customizable patterns are obtained using the inkjet printing process. In order to transfer the patterned PEDOT:PSS films, adhesion properties at interfaces during multistep transfer printing processes are carefully adjusted. The transferred PEDOT:PSS film on the plastic substrates shows not only a sheet resistance of 260.6 Ω/□ and a transmittance of 92.1% at 550 nm wavelength but also excellent mechanical flexibility. The PLEDs with spin‐coated functional layers sandwiched between the transferred PEDOT:PSS top anodes and inkjet‐printed Ag bottom cathodes are fabricated. The fabricated PLEDs on the plastic substrates show a high current efficiency of 10.4 cd A^?1 and high mechanical stability. It is noted that because both Ag and PEDOT:PSS electrodes can be patterned with a high degree of freedom via the inkjet printing process, highly customizable PLEDs with various pattern sizes and shapes are demonstrated on the glass and plastic substrates. Finally, with all solution process, a 5 × 7 passive matrix PLED array is demonstrated.     

Excellent Switching Uniformity of Cu-Doped $hbox{MoO}_{x}/hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

We have investigated a Cu-doped MoO_x/GdO_x bilayer film for nonvolatile memory applications. By adopting an ultrathin GdO_x layer, we obtained excellent device characteristics such as resistance ratio of three orders of magnitude, uniform distribution of set and reset voltages, switching endurance up to 10⁴ cycles, and ten years of data retention at 85degC. By adopting bilayer films of Cu-doped MoO_x/GdO_x, a local filament was formed by a two-step process. Improved memory characteristics can be explained by the formation of nanoscale local filament in the ultrathin GdO_x layer.