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81.
Defect engineering represents a significant approach for atomically thick 2D semiconductor material development to explore the unique material properties and functions. Doping-induced conversion of conductive polarity is particularly beneficial for optimizing the integration of layered electronics. Here, controllable doping behavior in palladium diselenide (PdSe2) transistor is demonstrated by manipulating its adatom-vacancy groups. The underlying mechanisms, which originate from reversible adsorption/desorption of oxygen clusters near selenide vacancy defects, are investigated systematically via their dynamic charge transfer characteristics and scanning tunneling microscope analysis. The modulated doping effect allows the PdSe2 transistor to emulate the essential characteristics of photo nociceptor on a device level, including firing signal threshold and sensitization. Interestingly, electrostatic gating, acting as a neuromodulator, can regulate the adaptive modes in nociceptor to improve its adaptability and perceptibility to handle different danger levels. An integrated artificial nociceptor array is also designed to execute unique image processing functions, which suggests a new perspective for extension of the promise of defect engineered 2D electronics in simplified sensory systems toward use in advanced humanoid robots and artificial visual sensors.  相似文献   
82.
A method for analyzing and designing the slot antenna array excited by a coplanar waveguide (CPW) is presented. The slots are etched on the conducting plane of the CPW and placed in the direction perpendicular to the transmission line. Moment-method analysis and matrix-pencil approach are adopted to calculate the scattering parameters and hence the self-admittance of each slot. The mutual admittances between the slots are calculated from the formulas derived for the complementary strip dipoles based on the reciprocity theorem and via Booker's relation. Then the transmission line theory is used to calculate the input impedance of the array, and an iterative process is employed to obtain a matched design for a desired slot-voltage distribution. A four-element slot array is fabricated and measured using this design procedure. Calculated results are in good agreement with measurements  相似文献   
83.
This paper applies the repetition index scheme(RIS)to the channel identification of cyclic prefixed(CP)multiple-input multiple-output orthogonal frequency division multiplexing(MIMO-OFDM)systems with virtual carriers(VCs)in the environment of the number of receive antennas being no less than that of transmit antennas.The VCs will cause a rank deficiency problem in computing the subspace information.With the subcarrier mapping matrix,the received signal is simplified to remove the rank deficiency.We use the RIS scheme to generate many times of equivalent symbols so the channel identification can converge with few received OFDM blocks.The RIS scheme will convert the white noise into non-white noise.With the Cholesky factorization,a noise whitening technique is developed to turn the non-white noise back to white noise.We further analyze the necessary conditions of identifiability of channel estimation.Simulations are performed to show the superiority of the proposed method.  相似文献   
84.
A low power digital signed array multiplier based on a 2-dimensional (2-D) bypassing technique is proposed in this work. When the horizontally (row) or the vertically (column) operand is zero, the corresponding bypassing cells skip redundant signal transitions to avoid unnecessary calculation to reduce power dissipation. An 8×8 signed multiplier using the 2-D bypassing technique is implemented on silicon using a standard 0.18 μm CMOS process to verify power reduction performance. The power-delay product of the proposed 8×8 signed array multiplier is measured to be 31.74 pJ at 166 MHz, which is significantly reduced in comparison with prior works.  相似文献   
85.
The design and preparation of isotropic silver nanowire‐polystyrene composites is described, in which the nanowires have finite L/D (< 35) and narrow L/D distribution. These model composites allow the L/D dependence of the electrical percolation threshold, ?c, to be isolated for finite‐L/D particles. Experimental ?c values decrease with increasing L/D, as predicted qualitatively by analytical percolation models. However, quantitative agreement between experimental data and both soft‐core and core–shell analytical models is not achieved, because both models are strictly accurate only in the infinite‐L/D limit. To address this analytical limitation, a soft‐core simulation method to calculate ?c and network conductivity for cylinders with finite L/D are developed. Our simulated ?c results agree strongly with our experimental data, suggesting i) that the infinite‐aspect‐ratio assumption cannot safely be made for experimental networks of particles with L/D < 35 and ii) in predicting ?c, the soft‐core model makes a less significant assumption than the infinite‐L/D models do. The demonstrated capability of the simulations to predict ?c in the finite‐L/D regime will allow researchers to optimize the electrical properties of polymer nanocomposites of finite‐L/D particles.  相似文献   
86.
87.
Smartphones have become more popular in our lives. We will no longer need to use our hands to control phones to do such things as take pictures, switch music, or make phone calls in the future; we will use our brains: all that can be controlled with the use of brainwaves instead. In this study, we implement a novel system that contains the most commonly used functions of a smartphone, including camera use and music play, with an app that uses brainwave controls. In addition, we also provide an essential daily-use function which can remind us to concentrate when we drive, study, or do something important. Under the proposed system, when the wireless brainwave instrument is worn, brainwave signals transfer to the smartphone via Bluetooth automatically and execute the aforementioned functions. Experimental results indicate that the present system is effective and suitable for such applications in our lives. In the future, some more related applications will be developed with brainwave control for practical daily-life uses.  相似文献   
88.
In the present paper, two major analyses are achieved. In the first, experimental procedures were accomplished to measure tensile mechanical properties of copper (Cu) wire (= 1 mil) before/after electric flame-off (EFO). Characteristics of free air ball (FAB), heat affected zone (HAZ) and thermal stable zone (TSZ) in as-drawn wire have been carefully investigated by microhardness, self-design pull test fixture, nanoindentation and atomic force microscopy (AFM). A 2nd EFO real-time technique has been conducted to reduce the strength of Cu wire and increase the bonding region. Secondary, with the obtained experimental material data, a comprehensive finite element wirebonding model based on explicit time integration software ANSYS/LS-DYNA is developed to predict the overall strain/stress distributions on the aluminum (Al) bond pad. Finite element analysis (FEA) results demonstrate that plastic deformation on Al bond pad around smashed FAB can be reduced by increasing the surface roughness on FAB. A series of comprehensive parametric studies were conducted in this research.  相似文献   
89.
A nitrogen-implanted polysilicon thin film resistor has been proposed to improve the electrical characteristics of resistors in high-voltage CMOS technologies. The SIMS profile shows the proposed nitrogen-implanted polysilicon resistor can raise 100 times of the concentration of nitrogen. Thereby, the temperature coefficient of resistance (TCR), voltage coefficient of resistance (VCR), and mismatch are improved 20.4%, 35.9%, and 23.5% in average, respectively. The improvements are attributed to the suppression of both hydrogen intrusion by the presence of high-nitrogen concentration in polysilicon  相似文献   
90.
A circular slot antenna fed by a coplanar waveguide (CPW) is proposed for dual-band operations. Dual frequency bands that cover the 2.4 GHz (2400-2484 MHz) and 5 GHz (5150-5825 MHz) bands were obtained by embedding a pair of slits in the circular back-patch that is printed on the backside of the substrate and concentric with the circular slot. This design resulted in broadside far-field patterns with low cross-polarisation levels in both frequency bands and a small antenna size of 40/spl times/40 mm with the ground plane regarded as part of the antenna structure.  相似文献   
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