Design of quasi-elliptic function filters with a dual-passband response

Compact miniaturized hairpin resonators are used to design cross-coupled filters with a dual-passband response of elliptic function type. The hairpin resonators are treated as a stepped impedance resonator (SIR) in analysis. In a filter, two different hairpin resonators are used to establish proper couplings required for the two design frequencies. Two filters are fabricated and measured. The results show a good agreement with the simulation.     

基于AMBE-1000与nRF401的无线语音传输系统的实现

介绍了Digital Voice System. Inc公司的AMBE-1000芯片与挪威Nordic 公司的nRF401芯片的特点与工作原理,给出了一种基于AMBE-1000和nRF401的无线语音传输系统的实现.系统采用AMBE-1000 结合TCM320AC36C进行语音信号的处理;同时,采用nRF401传输数字化后的语音信号;在整体上,采用AT89C52 处理器负责接口之间的数据处理.提出了系统的硬件设计、软件流程.此系统具有无需许可证、功耗低、使用方便等特点,可广泛应用于无线语音传输系统的产品设计中.     

Techniques for flexible image/video resolution conversion with heterogeneous terminals

Multimedia capturing and display devices of different resolutions and aspect ratios can be easily connected by networks and, thus, there is a great need to develop techniques that facilitate flexible image/video format conversion and content adaptation among these heterogeneous terminals. Quality degradation due to downsampling, up-sampling, coding/decoding, and some content adaptation mechanism (say, image mosaicking) in the transmission process is inevitable. It is desirable that multimedia contents can be easily captured, displayed, and seamlessly composed. Challenges and techniques to achieve this goal are reviewed first. Then, two specific topics, i.e., image/video mosaicking and super resolution (SR) conversion, are highlighted. As compared with previous work developed for these problems, the challenge under the current context is to strike a balance between low computational complexity and high quality of resultant image/video. Several new developments along this line are discussed     

Nitride-Based High-Power Flip-Chip LED With Double-Side Patterned Sapphire Substrate

A nitride-based high-power flip-chip (FC) light-emitting diode (LED) with a double-side patterned sapphire substrate (PSS) was proposed and realized. Under 350-mA current injection, it was found that forward voltages were 3.24, 3.26, and 3.25 V for the conventional FC LED, FC LED prepared on PSS, and FC LED with double-side PSS, respectively. It was found that the 350-mA LED output powers were 79.3, 98.1, and 121.5 mW for the conventional FC LED, FC LED prepared on PSS, and FC LED with double-side PSS, respectively. In other words, we can enhance the electroluminescence intensity by 53% without increasing operation voltage of the fabricated LED     

The preparation of PLZT ceramics from a sol-gel process

Sol-gel process is employed to prepare PLZT ceramic with the composition 9/56/44 (La/Zr/Ti). Complete crystallization of the sol-gel derived powders is achieved after 600°, 1 hr. calcination. The sintered density of the PLZT pellet decreases as the sintering time increases. A ninety-nine percent theoretical density is obtained for samples sintered at 1250° for one hour. The dielectric properties and optical transmission of the sol-gel derived samples are measured and compared with those of the hot-pressed PLZT ceramics reported in the literature. Sol-gel derived powders, when properly sintered, possess sufficient optical transparency for optoelectrical device applications.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Novel H.264/AVC entropy coding mode decision

In this work, we propose a novel entropy coding mode decision algorithm to balance the tradeoff between the rate-distortion (R-D) performance and the entropy decoding complexity for the H.264/AVC video coding standard. Context-based adaptive binary arithmetic coding (CABAC), context-based adaptive variable length coding (CAVLC), and universal variable length coding (UVLC) are three entropy coding tools adopted by H.264/AVC. CABAC can be used to encode the texture and the header data while CAVLC and UVLC are employed to encode the texture and the header data, respectively. Although CABAC can provide better R-D performance than CAVLC/UVLC, its decoding complexity is higher. Thus, by taking the entropy decoding complexity into account, CABAC may not be the best tool, which motivates us to examine the entropy coding mode decision problem in depth. It will be shown experimentally that the proposed mode decision algorithm can help the encoder generate the bit streams that can be decoded at much lower complexity with little R-D performance loss.     

Electrochemical synthesis of a double‐layer film of ZnO nanosheets/nanoparticles and its application for dye‐sensitized solar cells

A double‐layer film, consisting of an upper layer of ZnO nanosheets and a lower layer of ZnO nanoparticles (designated as ZnONS/NP), was synthesized for the photoanode of a dye‐sensitized solar cell (DSSC) by a one‐step potentiostatic electrodeposition on a conducting fluorine‐doped tin oxide substrate at 70 °C in a solution containing zinc nitrate and sodium acetate, followed by the pyrolysis of the film at 300 °C. The growth mechanism of the double‐layer nanostructure was studied by monitoring the morphological changes at various periods of electrodeposition. The effects of the concentration of acetate anion on the morphology of the double‐layer structure were also studied. The double‐layer film of ZnONS/NP showed a better self‐established light scattering property, compared with that of a thin film of ZnO nanoparticles, prepared without acetate anion. The concentration of an acetate anion in the electrolyte for the electrodeposition of the double‐layer film, the electrodeposition period, and the period for dye adsorption were optimized for obtaining the best performance for a DSSC with a photoanode consisting of the double layer. A metal‐free dye, coded as D149, was used in this research. A conversion efficiency of 4.65% was achieved for a DSSC (0.2376 cm²) with the photoanode, consisting of the double‐layer film, under 100 mW/cm² illumination in the wavelength range of 400–800 nm. X‐ray diffraction patterns, thermo gravimetric curves, elemental analysis, scanning electron microscopic images, transmission electron microscopic image, transmission spectra, and electrochemical impedance spectra were used to explain observations. Copyright © 2012 John Wiley & Sons, Ltd.     

Run-by-Run Process Control of Metal Sputter Deposition: Combining Time Series and Extended Kalman Filter

By the time series model, this paper constructed the disturbance model for the aluminum sputter deposition process and derived the extending Kalman filter (EKF) controller based on this new disturbance model. Experimental results reveal that ARI(3,1) model appropriately characterizes the dynamic behavior of the disturbance for the processes. The EKF controller which includes information of process noise and measurement noise is able to regulate the model coefficients automatically as the target is replaced or degrades. In this paper, the d-EWMA controller, time-varying d-EWMA controller, age-based d-EWMA controller, and EKF controller have been applied to aluminum sputter deposition processes for predicting deposition rates and comparing their performances. The application of the EKF controller here is proven to improve the estimating accuracy of the aluminum sputter deposition process significantly, regardless of whether the deposition rates are measured at each run or not.     

型号研制与批产交叉状态下的质量管理与控制

由于当前形势的紧迫性和必要性,型号的研制与生产的进度往往加快,出现两者高度交叉的现象.分析了这种交叉状态的显著特点,提出如何在这种交叉的状态下实施质量管理的内容要点.并且论述了实施型号产品的质量管理的方法与策略,保证了型号的质量一致性水平,使交付的产品最终满足用户的要求.