Soft error susceptibility mapping of DRAMs using a high-energy nuclear microprobe

Soft errors in 16 Mbit dynamic random access memories (DRAMs) have been investigated using proton microprobes at 400 keV with a spot size of 1 × 1 μm². The newly developed susceptibility mapping can reveal the correlation between the particle hit-position position and the susceptibility to soft errors in a DRAM. The cell-mode soft-errors were found to take place by the incidence of ions within 6 μm around a monitored cell. These errors would be induced by minority carrier diffusion in a lateral direction. This result manifests the possibility of multiple-bit errors by the incidence of an energetic particle.     

Experimental demonstration of soliton data transmission over unlimited distances with soliton control in time and frequency domains

A 2/sup 9/-1 pseudorandom-binary-sequence soliton signal has been transmitted experimentally over one million km for the first time with no degradation in the bit error rates. The synchronous modulator was driven by a timing clock signal extracted from the transmitting data signal. These results mean that it is possible to send soliton data signals over unlimited distances through the use of soliton control in the time and frequency domains.<>     

10 Gbit/s, 1200 km error-free soliton data transmission using erbium-doped fibre amplifiers

Soliton data signals at 10 Gbit/s have been successfully transmitted for the first time through a 1200 km dispersion-shifted fibre by using 24 erbium-doped fibre amplifiers. A bit error rate below 10/sup -13/ was obtained with 2/sup 20/-1 pseudorandom patterns.<>     

EXOS-D (AKEBONO) very low frequency plasma wave instruments (VLF)

The Akebono (EXOS-D) satellite has been successfully observing the Earth's magnetosphere since it was launched on February 21, 1989. The objectives of VLF instruments on board the satellite were to investigate the behavior of plasma waves associated with accelerated auroral particles, wave-particle interaction mechanisms, and propagation characteristics of whistler-mode waves in the magnetosphere. The instruments measured not only the dynamic spectra of VLF waves up to 15 kHz by a wideband receiver, but also their absolute field intensities, wave normal vectors, and Poynting vectors. Two electric and three magnetic components with a bandwidth of about 50 Hz up to 12.5 kHz are sent to measure the wave normal vectors and Poynting vectors. The antenna impedance is measured to determine the correct absolute electric field intensities. The instruments have successfully measured the wave spectra, the wave normal vectors. Poynting vectors, the precise wave intensities, the antenna impedance, etc. The present paper describes the unique features of the instruments, especially the Poynting flux analyzers in more detail. Obtained scientific results are also reviewed     

A low-resistance self-aligned T-shaped gate for high-performancesub-0.1-μm CMOS

This paper describes the high performance of T-shaped-gate CMOS devices with effective channel lengths in the sub-0.1-μm region. These devices were fabricated by using selective W growth, which allows low-resistance gates smaller than 0.1 μm to be made without requiring fine lithography alignment. We used counter-doping to scale down the threshold voltage while still maintaining acceptable short-channel effects. This approach allowed us to make ring oscillators with a gate-delay time as short as 21 ps at 2 V with a gate length of 0.15 μm. Furthermore, we experimentally show that the high circuit speed of a sub-0.1-μm gate length CMOS device is mainly due to the PMOS device performance, especially in terms of its drivability     

Analysis of availability improvement in LMSS by means of satellitediversity based on three-state propagation channel model

Aiming at future multimedia land mobile-satellite services (LMSS) consisting of a large number of nongeostationary Earth-orbit satellites, we present an LMSS propagation channel model for assessing the effect of a satellite diversity scheme so that high service availability and high signal quality are assured. We classify general fading environments for LMSS into three states. By taking the occurrence probability of each state into account, a new fading channel model is developed. The validity of the model is identified by comparing its predicted values in terms of the cumulative distribution function (CDF) with measured data available so far. Then, based on this model, we calculate the satellite diversity effect assuming that the area is illuminated simultaneously by at least two satellites moving in low Earth orbits (LEO) over urban and suburban environments. In addition, state transition characteristics based on a Markov model are presented     

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

The tunnel injection transit time (TUNNETT) diodes with p⁺p⁺n⁺n⁻n⁺ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p⁺n⁺) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of −60 dBc/Hz at 1 kHz bandwidth.     

Development of coincidence transmission electron microscope. III. Incorporation with gamma-type imaging energy filter

We have developed a new analytical transmission electron microscope (TEM), called coincidence TEM, which, in principle, enables observation of elemental mapping images at a high signal-to-noise ratio. We have previously reported the successful observation of an elemental mapping image of a specimen, but over a very long period of time (168 h). To solve this inefficiency, we installed a gamma-type imaging energy filter in the coincidence TEM to remove the no-loss electrons, which are mainly transmitted electrons. This has enabled the intensity of the background signals in the coincidence measurement to be markedly reduced. The coincidence TEM with a gamma-type imaging energy filter allows the coincidence image to be observed in 3 h, thus, the measurement time is shortened by two orders of magnitude. Moreover, the use of a silicon drift detector (SDD) will shorten the measurement time.     

Improved selective growth of InP around dry-etched mesas by metalorganic chemical vapor deposition at low growth temperature

A comparative study has been carried out regarding selective embedding growth of InP by metalorganic chemical vapor deposition (MOCVD) around dry-etched mesas, using two types of reactors: a conventional horizontal type and a highspeed rotating-susceptor type. In the case of the conventional horizontal-type MOCVD, overgrowth on the mask was observed when the growth temperature was low (600°C). On the other hand, an almost planar grown surface without such overgrowth was achieved by using the high-speed rotating-susceptor MOCVD for a wide range of growth temperatures, especially even at a low growth temperature of 580°C. Regarding the high-speed rotating-susceptor MOCVD, we have also investigated the effects of dopants on the growth behaviors and have found a remarkable difference between n-type S-doped and p-type Zn-doped InP in the growth behaviors. The mechanism for suppressing overgrowth in case of the high-speed rotating-susceptor MOCVD, as well as the cause for the different effects between the dopants, are discussed.     

A linear CMOS transconductance element of an adaptively biased source-coupled differential pair using a quadritail cell

A novel circuit design technique for realizing a linear CMOS transconductance element, consisting of an adaptively biased source-coupled differential pair using a quadritail cell, is proposed. In the circuitry, the quadritail cell, which provides an output current proportional to the square of a differential input voltage, cancels a nonlinear term of the source-coupled differential pair. The circuit have a superior linearity and a wide linear input voltage range compared with the conventional linear CMOS transconductance elements because the transconductance characteristic is theoretically linear over wide input voltage range when all the MOS field-effect transistors (MOSFETs) are operating in the saturation region and the MOSFETs' behaviors are according to the relation based on the square-law characteristic. The proposed adaptively biased source-coupled differential pair was verified by using transistor-arrays and discrete components on a breadboard.