Direct synthesis of epitaxial zinc sulphide layers on zinc single-crystal substrates

Epitaxial thin zinc sulphide layers have been grown by direct synthesis on the basal face of zinc single crystals. Sulphur vapour reacted on the surface of the crystals, which were grown in sealed glass ampoules evacuated to 10^?6 torr. The thicknesses of the layers investigated varied from several hundred to 1000–1500 Å. The morphology, structure and epitaxy of the films were examined by electron microscope, electron and X-ray diffraction techniques. It was found that the film lattice had a sphalerite-type cubic structure, the perfection of the layer structure increasing with rise in both the substrate temperature and the sulphur vapour pressure. The layers were produced at substrate temperatures of 250°–400°C: polycrystalline ZnS films were obtained in the range 250°–300°C; at higher temperatures a definite texture gradually appeared and above 370°C, with a sulphur vapour pressure of 0.2–10 torr, the films became epitaxial. The following epitaxial relation was established:

$\text{{111} ZnS ∥ {0001} Zn}$

with

$\text{<110 > ZnS ∥ <11}\text{20}\text{> Zn}$

The zinc sulphide films reproduced the surface structure of the supporting zinc single crystals very well and could conveniently be used as electron microscope replicas.     

Hypertension and left ventricular mass index (L.VMI) in patients on regular hemodialysis (RDT)

Background:  Because of high incidence of acquired renal cyst and renal malignancy, it is suggested that spontaneous renal rupture more frequently occurs in patients receiving long‐term hemodialysis than in the general population. This study was performed to evaluate the clinical characteristics of spontaneous renal rupture in hemodialysis patients. Methods:  This retrospective study enrolled 12 hemodialysis patients who developed spontaneous renal rupture. We investigated primary renal disease, duration of dialysis, clinical symptoms and signs, radiologic findings, treatment modalities, and histologic findings. Result:  The mean age of the patients was 54 ± 10 years old and the number of male was 9. Primary renal disease consisted of autosomal dominant polycystic kidney disease (PCKD)(n = 5), chronic glomerulonephritis (n = 2), diabetic nephropathy (n = 1), hypertensive nephropathy (n = 1), unknown cause (n = 3). Presenting symptoms and signs were sudden onset of flank pain in 9 patients and gross hematuria with mild flank pain in 3 patients. Mean duration from initiation of hemodialysis to development of spontaneous renal rupture was 53 ± 36 months. Abdominal computed tomography showed subcapsular or perinephric hematoma in all patients. Of the 7 non‐PCKD patients, 6 patients had multiple acquired renal cysts. Surgical exploration was undertaken in 9 patients. Pathologic examination demonstrated small sized renal cell carcinoma in 2 of 9 patients. Three patients were only treated with conservative management including blood transfusion. All 12 patients recovered without recurrence. Conclusion:  This study demonstrated that genetic or acquired renal cyst was an important cause of spontaneous renal rupture in hemodialysis patients and presenting manifestations were sudden onset of flank pain and gross hematuria.     

On the SO2 problem of solid fuel combustion

Many companies use two-phase absorbents (CaCO₃ suspension) for waste gases purification from SO₂. A qualitative theoretical analysis of the absorption kinetics in the cases of two-phase absorbent, using the convection-diffusion type of model, is presented. It is shown that the low CaCO₃ concentration lead to very small chemical reaction rate and as a result the absorption rate is limited by the physical absorption of SO₂ in water, i.e. the process efficiency is very small. An average concentration model for quantitative analysis of the absorption process and an iterative numerical algorithm for the model equations solution is proposed.     

Investigation and simulation of a cross-flow air classifier

Extensive experimental tests and a computational study of the performance in a cross-flow air classifier have been carried out. A computational fluid dynamics (CFD) package—Fluent—is used to first understand and explain why the cuts or the sharpness of cut of this classifier are not as sharp as they ought to be, and then to optimize the geometry and operational conditions.

Flow fields of the classifier under various set-up conditions and geometry were measured by using laser Doppler anemometry (LDA). Using sieve analyses and the HELOS-laser method, the patterns of behaviour of separation parameters such as cut size and sharpness of cut have been investigated at different boundary conditions.

Using the Fluent package, a two-dimensional computational fluid dynamics model has been developed. The model is based on the Euler–Lagrangian approach. Different turbulence models have been tested. Both Fluent 4.5, with a structured grid, and Fluent 5.1, with structured and unstructured grids, have been used.

Discussions and analyses of the experimental, as well as the computational results, are presented. The simulation with a structured grid shows good agreement with experimental data, except for the sharpness of cut. The reasons of poor performance of the classifier have been found. The geometry is optimized and other conditions were also improved. The performance of the classifier is improved. The experimental observations together with the computed results should increase the depth of understanding of the underlying mechanisms.     

Direct silver bonding – an alternative for substrates in power semiconductor packaging

Bonding between silver and ceramics like Al₂O₃, ZrO₂, MgO, AlN, sapphire or quartz glass is obtained by a liquid phase bonding process based on the pseudo-binary eutectic between Ag and CuO (at 1 mol %). It melts 15 K below the melting point of pure Ag in air. Excellent wetting between the eutectic liquid and the ceramic surfaces gives mechanically strong, reliable bonds. The bonding mechanism is similar to the well known direct copper bonding (DCB)-process. Our new process is simple and works at 1219±2 K in plain air. It therefore has the potential of massive cost reductions compared to the more complicated DCB-process.