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111.
Rousseau F Hellier P Letteboer MM Niessen WJ Barillot C 《IEEE transactions on medical imaging》2006,25(11):1492-1501
In this paper, three different calibration methods for three-dimensional (3-D) freehand ultrasound (US) are evaluated. Calibration is the process of estimating the rigid transformation from US image coordinates to the coordinate system of the tracking sensor mounted onto the probe. Calibration accuracy has an important impact on quantitative studies. Geometrical precision can also be crucial in many interventions and surgery. The proposed evaluation framework relies on a single point phantom and a 3-D US phantom which mimics the US characteristics of human liver. Four quality measures are used: 3-D point localization criterion, distance and volume measurements, and shape based criterion. Results show that during the acquisition procedure, volumetric measurements and shapes of the reconstructed object depend on probe motion used, particularly fan motions for which errors are larger. It is also shown that accurate calibration is essential to obtain reliable quantitative information. 相似文献
112.
Christian Stephan Bernd 《AEUE-International Journal of Electronics and Communications》2006,60(1):20-24
Security for ad hoc network environments has received a lot of attention as of today. Previous work has mainly been focussing on secure routing, fairness issues, and malicious node detection. However, the issue of introducing and conserving trust relationships has received considerably less attention. In this article, we present a scalable method for the use of public key certificates and their revocation in mobile ad hoc networks (MANETs). With the LKN-ad hoc security framework (LKN-ASF) a certificate management protocol has been introduced, bringing PKI technology to MANETs. In addition a performance analysis of two different revocation approaches for MANETs will be presented. 相似文献
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115.
Liquid–Liquid Diffusion‐Assisted Crystallization: A Fast and Versatile Approach Toward High Quality Mixed Quantum Dot‐Salt Crystals 下载免费PDF全文
Marcus Adam Zhiyu Wang Aliaksei Dubavik Gordon M. Stachowski Christian Meerbach Zeliha Soran‐Erdem Christin Rengers Hilmi Volkan Demir Nikolai Gaponik Alexander Eychmüller 《Advanced functional materials》2015,25(18):2638-2645
Here, a new, fast, and versatile method for the incorporation of colloidal quantum dots (QDs) into ionic matrices enabled by liquid–liquid diffusion is demonstrated. QDs bear a huge potential for numerous applications thanks to their unique chemical and physical properties. However, stability and processability are essential for their successful use in these applications. Incorporating QDs into a tight and chemically robust ionic matrix is one possible approach to increase both their stability and processability. With the proposed liquid–liquid diffusion‐assisted crystallization (LLDC), substantially accelerated ionic crystallization of the QDs is shown, reducing the crystallization time needed by one order of magnitude. This fast process allows to incorporate even the less stable colloids including initially oil‐based ligand‐exchanged QDs into salt matrices. Furthermore, in a modified two‐step approach, the seed‐mediated LLDC provides the ability to incorporate oil‐based QDs directly into ionic matrices without a prior phase transfer. Finally, making use of their processability, a proof‐of‐concept white light emitting diode with LLDC‐based mixed QD‐salt films as an excellent color‐conversion layer is demonstrated. These findings suggest that the LLDC offers a robust, adaptable, and rapid technique for obtaining high quality QD‐salts. 相似文献
116.
Semiconductor Nanocrystals: Liquid–Liquid Diffusion‐Assisted Crystallization: A Fast and Versatile Approach Toward High Quality Mixed Quantum Dot‐Salt Crystals (Adv. Funct. Mater. 18/2015) 下载免费PDF全文
117.
Harald Kröll Stefan Zwicky Benjamin Weber Christian Benkeser Qiuting Huang 《Journal of Signal Processing Systems》2013,73(3):301-314
The open source GSM protocol stack of the OsmocomBB project offers a versatile development environment regarding the data link and network layer. There is no solution available for developing physical layer baseband algorithms in combination with the data link and network layer. In this paper, a baseband development framework architecture with a suitable interface to the protocol stack of OsmocomBB is presented. With the proposed framework, a complete GSM protocol stack can be run and baseband algorithms can be evaluated in a closed system. It closes the gap between physical layer signal processing implementations in Matlab and the upper layers of the OsmocomBB GSM protocol stack. An embedded version of the system has been realized with FPGA and PowerPC to enable real-time operation. The functionality of the system has been verified with a testbed comprising an OpenBTS base-station emulator, a receiver board with RF transceiver and our developed physical layer signal processing system. 相似文献
118.
Dynamic Control Over Electronic Transport in 3D Bulk Nanographene via Interfacial Charging 下载免费PDF全文
Subho Dasgupta Di Wang Christian Kübel Horst Hahn Theodore F. Baumann Jürgen Biener 《Advanced functional materials》2014,24(23):3494-3500
Electrochemical surface charge‐induced variation of physical properties in interface‐dominated bulk materials is a rapidly emerging field in material science. The recently developed three‐dimensional bulk nanographene (3D‐BNG) macro‐assemblies with ultra‐high surface area and chemical inertness offer new opportunities in this area. Here, the electronic transport in centimeter‐sized 3D‐BNG monoliths can be dynamically controlled via electrochemically induced surface charge density. Specifically, a fully reversible variation in macroscopic conductance up to several hundred percent is observed with ≤1 V applied gate potential. The observed conductivity change can be explained in the light of the electrochemically‐induced accumulation or depletion of charge carriers in combination with a large variation in the carrier mobility; the latter, being highly affected by the defect density modulations resulting from the interfacial charge injection, sharply decreases with an increase in defect concentrations. The phenomenon presented in this study is believed to open the door to novel applications of bulk graphene materials such as, for example, low voltage and high power tunable resistors. 相似文献
119.
Superparamagnetic Twist‐Type Actuators with Shape‐Independent Magnetic Properties and Surface Functionalization for Advanced Biomedical Applications 下载免费PDF全文
Christian Peters Olgaç Ergeneman Pedro D. Wendel García Michelle Müller Salvador Pané Bradley J. Nelson Christofer Hierold 《Advanced functional materials》2014,24(33):5269-5276
Directed nanoparticle self‐organization and two‐photon polymerization are combined to enable three‐dimensional soft‐magnetic microactuators with complex shapes and shape‐independent magnetic properties. Based on the proposed approach, single and double twist‐type swimming microrobots with programmed magnetic anisotropy are demonstrated, and their swimming properties in DI‐water are characterized. The fabricated devices are actuated using weak rotating magnetic fields and are capable of performing wobble‐free corkscrew propulsion. Single twist‐type actuators possess an increase in surface area in excess of 150% over helical actuators with similar feature size without compromising the forward velocity of over one body length per second. A generic and facile combination of glycine grafting and subsequent protein immobilization exploits the actuator's increased surface area, providing for a swimming microrobotic platform with enhanced load capacity desirable for future biomedical applications. Successful surface modification is confirmed by FITC fluorescence. 相似文献
120.
Using full 3D TCAD, an evaluation of process parameter space of bulk FinFET is presented from the point of view of DRAM, SRAM and I/O applications. Process and device simulations are performed with varying uniform fin doping, anti-punch implant dose and energy, fin width, fin height and gate oxide thickness. Bulk FinFET architecture with anti-punch implant is introduced beneath the channel region to reduce the punch-through and junction leakage. For 30 nm bulk FinFET, anti-punch implant with low energy of 15 to 25 keV and dose of 5.0 × 1013 to 1.0 × 1014 cm−2 is beneficial to effectively suppress the punch-through leakage with reduced GIDL and short channel effects. Our simulations show that bulk FinFETs are approximately independent of back bias effect. With identical fin geometry, bulk FinFETs with anti-punch implant show same ION-IOFF behavior and approximately equal short channel effects like SOI FinFETs. 相似文献