International Working Group on Assurance Cases (for Security)

Critical systems are aptly named - from electric power to water and gas to the telephone system and the Internet, they're all critical to some aspect of our daily lives. We're a networked society and as such, it's important to both know whether critical systems are trustworthy and be able to communicate, review, and debate the level of trust achieved in them. In the safety domain, explicit safety cases are increasingly required by law, regulations, and standards. In this article, we outline what a small, international group of experts, spanning various disciplines in safety, security, reliability, and critical infrastructure, been doing with the International Working Group on Assurance Cases (for Security), what we hope to achieve, and where we go next.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

LDPC-based space-time coded OFDM systems over correlated fadingchannels: Performance analysis and receiver design

We consider a space-time coded (STC) orthogonal frequency-division multiplexing (OFDM) system with multiple transmitter and receiver antennas over correlated frequency- and time-selective fading channels. It is shown that the product of the time-selectivity order and the frequency-selectivity order is a key parameter to characterize the outage capacity of the correlated fading channel. It is also observed that STCs with large effective lengths and ideal built-in interleavers are more effective in exploiting the natural diversity in multiple-antenna correlated fading channels. We then propose a low-density parity-check (LDPC)-code-based STC-OFDM system. Compared with the conventional space-time trellis code (STTC), the LDPC-based STC can significantly improve the system performance by exploiting both the spatial diversity and the selective-fading diversity in wireless channels. Compared with the previously proposed turbo-code-based STC scheme, LDPC-based STC exhibits lower receiver complexity and more flexible scalability. We also consider receiver design for LDPC-based STC-OFDM systems in unknown fast fading channels and propose a novel turbo receiver employing a maximum a posteriori expectation-maximization (MAP-EM) demodulator and a soft LDPC decoder, which can significantly reduce the error floor in fast fading channels with a modest computational complexity. With such a turbo receiver, the proposed LDPC-based STC-OFDM system is a promising solution to highly efficient data transmission over selective-fading mobile wireless channels     

Adaptive cell division for ray tracing

In ray tracing the two most commonly used data structures are the octree and uniform cell division. The octree structure allows efficient adaptive subdivision of space, while taking care of the spatial coherence of the objects in it; however, the tree structure locating the next node in the path of a ray is complex and time consuming. The cell structure, on the other hand, can be stored in a three-dimensional array, and each cell can be efficiently accessed by specifying three indices. However, such a uniform cell division does not take care of object coherence. The proposed data structure combines the positive features of the above data structures while minimising their disadvantages. The entire object space is implicitly assumed to be a three-dimensional grid of cells. Initially, the entire object space is a single voxel which later undergoes “adaptive cell division.” But, unlike in the octree structure, where each voxel is divided exactly at the middle of each dimension, in adaptive cell division, each voxel is divided at the nearest cell boundary. The result is that each voxel contains an integral number of cells along each axis. Corresponding to the implicit cell division we maintain a three-dimensional array, with each array element containing the voxel number which is used to index into the voxel array. The voxel array is used to store information about the structure of each voxel, in particular, the objects in each voxel. While a ray moves from one voxel to another we always keep track of the cell through which the ray is currently passing. Since only arrays are involved in accessing the next voxel in the path of the ray, the operation is very efficient.     

Finite-element grid improvement by minimization of stiffness matrix trace

A new and simple method of finite-element grid improvement is presented. The objective is to improve the accuracy of the analysis. The procedure is based on a minimization of the trace of the stiffness matrix. For a broad class of problems this minimization is seen to be equivalent to minimizing the potential energy. The method is illustrated with the classical tapered bar problem examined earlier by Prager and Masur. Identical results are obtained.     

Measurement of the delayed-neutron yields in the fission of233U,236U,237Np,240Pu,and241Pu by neutrons from the spectrum of a fast reactor

Translated from Atomnaya Énergiya, Vol. 66, No. 2, pp. 100–103, February, 1989.     

Magnetic anisotropy of Co-Cr thin films as a function of substrate temperature during deposition

A sequence of Co78Cr22films, 500 nm in thickness, was prepared by deposition on glass in a modified Varian D.C. magnetron S-gun sputtering system. The substrate temperature during deposition, Ts, was fixed at various values with an upper limit of 300°C. Specimens were examined by VSM, TM, FMR and TEM. Msrises significantly with increasing Ts, peaking at 200°C at 370 emu/cm³. The effective volume-averaged anisotropy drops for Ts>110°C from +1.6 KOe to progressively negative values (-4.3 KOe at 300°C). From FMR we find indications of the presence, in addition to the transition and bulk layers, of a highly negative anisotropy constituent (sim-11.5KOe anisotropy field). This resonance appears at Tsvalues of 150°C and above. TEM plane and cross-section views taken on a Ts= 150°C specimen show islands composed of tilted columns within the bulk. For vertical recording, specimens prepared at Tsvalues between 50 and 100°C are recommended. On the other hand, for longitudinal recording applications, films prepared at Tsvalues above 250°C would seem to be appropriate.