Performance analysis of an improved MMSE multiuser receiver formismatched delay channels

Motivated by the fact that time delays in a practical direct-sequence code-division multiple-access (DS-CDMA) system can never be perfectly estimated, an improved minimum-mean squared-error (MMSE)-based receiver is proposed and analyzed. Via the simple assumption of a probability distribution for the delay estimation errors, the proposed receiver can achieve a performance superior to that of the conventional MMSE (CMMSE) receiver. The performances of this improved receiver and the CMMSE receiver are compared in terms of the mean squared error (MSE), probability of error, and asymptotic multiuser efficiency (AME). As the original definition of AME does not consider mismatched channels, the behavior of three single-user receivers bearing imperfect delay estimation is also investigated. These single-user receivers are employed to define a more appropriate AME. Finally, an efficient update mechanism to accommodate dynamic channel statistics, and thus practical implementation, is proposed     

HgCdTe离子注入掺杂及损伤特性

运用红外反射谱，背散射谱和二次离子质谱等方法研究ＨｇＣｄＴｅ注入Ｂ、Ｐ、Ｉｎ和Ａｓ等元素的掺杂与损伤特性。     

柱边边缘扫描检出模型的研究

本文建立了两种通用的柱边边缘扫描（白光扫描和激光扫描）检出的理论模型，给出了这两种模型的计算机仿真曲线，分析了影响边缘检出灵敏度的因素，并通过三种边缘检出方法验证了这两种模型的正确性。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Study on stacking faults and microtwins in wide bandgap II-VI semiconductor heterostructures grown on GaAs

ZnMgSSe and ZnSSe layers grown on GaAs substrates with GaAs buffer layers by molecular beam epitaxy have been examined by transmission electron microscopy (TEM). The depth level at which paired triangular stacking faults are nucleated in the ZnMgSSe/GaAs heterostructure has been investigated by using the plan-view TEM technique. It has been found that in the ZnMgSSe/GaAs heterostructure the nucleation of the paired stacking faults occurs within a range of depth which starts at the II-VI/GaAs interface and ends at a level that is above the interface by about 120 nm. The dominant type of defects in ZnSSe layers, which have the single triangular shape, has been identified to be microtwins by high resolution TEM.     

Fast optical switching in Sm/sup 3+/-doped fibers

We report an experimental investigation of the fast optical switching in a Sm/sup 3+/-doped fiber. We discovered that this fiber can effect a fast switching speed less than 5 ns. However, the required switching power is 472 W with pulsewidth 10 ns.     

Nanofabrication of 1-D photonic bandgap structures along a photonic wire

A strongly-guided one-dimensional (1-D) waveguide called a photonic wire has high spontaneous emission coupling efficiency, enabling one to realize low-threshold lasers. Combined with the use of 1-D photonic bandgap structures consisting of arrays of holes etched within the photonic wire, novel microcavity lasers can be realized. We report the nanofabrication of a photonic bandgap structure for 1.5 /spl mu/m wavelength along a InGaAsP photonic wire, and discuss numerical simulations for its electrodynamics.     

Directional light output from photonic-wire microcavity semiconductor lasers

We have obtained directional light output from a recently realized InGaAsP photonic-wire microcavity ring lasers. The output was achieved by fabricating a 0.45-/spl mu/m-wide U-shape waveguide next to a 10-/spl mu/m diameter microcavity ring laser. The laser has a threshold pump power of around 124 /spl mu/W when optically pumped at 514 nm. It is comparable to the former structure without output coupling. The output coupling efficiency can be controlled carefully by choosing the spacing between the laser cavity and the waveguide.     

电力变压器铁芯温度场的数值解法与实施

本文系统地介绍了求解电力变压器铁芯温度场的三维数值方法,较好地解决了流体—构件耦合场的数值求解问题,并采用有限元法对若干影响铁芯温升的相关因素进行了大量的数值模拟研究。     

采用低温等离子体技术净化柴油机排气微粒

本文对当前柴油机排气微粒后处理技术进行了分析，总结了低温等离子体技术在柴油机排气微粒后处理领域的应用情况，介绍了国内外的一些主要研究成果，并对今后的发展趋势进行了展望。