应用覆膜支架介入救治颈动脉破裂并假性动脉瘤

目的探讨应用覆膜支架介入治疗颈动脉破裂并假性动脉瘤.方法4例肿瘤所致颈动脉破裂并假性动脉瘤形成的患者,均出现颈部或口腔危及生命的出血,采用Seldinger方法,选用自膨式聚四氟乙烯覆膜支架治疗.结果4例成功施行血管内介入治疗,其中颈总动脉中段1例,颈动脉球2例,颈总动脉远段1例.共置入覆膜支架6枚.术后假性动脉瘤腔被隔绝,颈动脉通畅,患者的临床症状明显改善,无神经功能障碍.1例患者11 d后支架下缘颈总动脉与原瘤腔相通,再次置入覆膜支架,2个月的随访无再出血.1例患者经钢圈栓塞、放置覆膜支架及裸支架瘤腔     

进气系统阻力对柴油机性能影响的试验研究

通过发动机台架试验,研究进气系统阻力对柴油机性能的影响。得到D9-220柴油机进气系统和空滤器的最大阻力限值,为进气管路的设计和空滤器的选择提供了依据。     

Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion

Effects of fixed charge on R₀A value of ZnS-passivated x=0.3 HgCdTe n-on-p diode are explained as a shunt resistance that affects current-voltage (I-V) and dynamic resistance-voltage (Rd-V) characteristics. The fixed charge of 1×10¹¹/cm² to 2 × 10¹¹/cm² which is usually obtained with ZnS passivation makes the surface weakly inverted and reduces HgCdTe diode R₀A value owing to the short generation lifetime of HgCdTe substrate. The gate-controlled diode and specially fabricated diode are used to explain the surface leakage current in the weak inversion and charge sheet model is used to explain the characteristics. It is found that the surface leakage current by the inverted channel in the weak inversion can reduce R₀A more than other currents such as the generation current and tunneling current which are usually used to explain the surface leakage current of HgCdTe diode.     

Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two-Dimensional and Oxide/Two-Dimensional Transition Metal Dichalcogenide Diodes

Among many of 2D semiconductor-based devices, type III PN junction diodes are given special attentions due to their unique function, negative differential resistance (NDR). However, it has been found uneasy to achieve well-matched type III PN junctions from 2D–2D van der Waals heterojunctions. Here, the authors present other alternatives of type III heterojunctions, using 2D p-MoTe₂/organic n-type dipyrazino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) and 2D p-WSe₂/n-MoO_x systems. Those junction diodes appear to well-demonstrate static and dynamic NDR behavior via resonant tunneling and electron–hole recombination. Extended to an inverter circuit, p-MoTe₂/n-HAT-CN diode enables multilevel inverter characteristics as monolithically integrated with p-MoTe₂ channel field effect transistor. The same NDR diode shows dynamic LC oscillation behavior under a constant DC voltage, connected to an external inductor. From p-WSe₂/n-MoO_x oxide diode, similar NDR behavior to those of p-MoTe₂/n-HAT-CN is again observed along with LC oscillations. The authors attribute these visible oscillation results to high peak-to-valley current ratios of their organic or oxide/2D heterojunction diodes.     

Progressive NO2 Sensors with Rapid Alarm and Persistent Memory-Type Responses for Wide-Range Sensing Using Antimony Triselenide Nanoflakes

Antimony triselenide (Sb₂Se₃) nanoflake-based nitrogen dioxide (NO₂) sensors exhibit a progressive bifunctional gas-sensing performance, with a rapid alarm for hazardous highly concentrated gases, and an advanced memory-type function for low-concentration (<1 ppm) monitoring repeated under potentially fatal exposure. Rectangular and cuboid shaped Sb₂Se₃ nanoflakes, comprising van der Waals planes with large surface areas and covalent bond planes with small areas, can rapidly detect a wide range of NO₂ gas concentrations from 0.1 to 100 ppm. These Sb₂Se₃ nanoflakes are found to be suitable for physisorption-based gas sensing owing to their anisotropic quasi-2D crystal structure with extremely enlarged van der Waals planes, where they are humidity-insensitive and consequently exhibit an extremely stable baseline current. The Sb₂Se₃ nanoflake sensor exhibits a room-temperature/low-voltage operation, which is noticeable owing to its low energy consumption and rapid response even under a NO₂ gas flow of only 1 ppm. As a result, the Sb₂Se₃ nanoflake sensor is suitable for the development of a rapid alarm system. Furthermore, the persistent gas-sensing conductivity of the sensor with a slow decaying current can enable the development of a progressive memory-type sensor that retains the previous signal under irregular gas injection at low concentrations.     

导体-介质组合体散射分析两种积分方程法比较

采用耦合积分方程和单积分方程两种方法,分析了三维导体-介质组合体目标的电磁散射问题.与传统的耦合积分方程法相比,单积分方程法使介质体表面的未知量数目减少一半,并且能获得更快的迭代解.讨论了导体-介质交界线上RWG基函数的正确处理问题.对介质锥-导体柱组合体、导体-介质组合球和某导弹模型的雷达截面(RCS)进行了计算和比较,验证了两种积分方程方法的正确性,且数值结果表明单积分方程法更加有效.     

SET/CMOS hybrid process and multiband filtering circuits

We have developed an integration technology for the single electron transistor (SET)/CMOS hybrid systems. SET and CMOS transistors can be optimized without any possible degradation due to mixing dissimilar devices by adopting just one extra mask step for the separate gate oxidation (SGOX). We have confirmed that discrete devices show ideal characteristics required for the SET/CMOS hybrid systems. An SET shows obvious Coulomb oscillations with a 200-mV period and CMOS transistors show high voltage gain. Based on the hybrid process, new hybrid circuits, called periodic multiband filters, are proposed and successfully implemented. The new filter is designed to perform a filtering operation according to the periodic multiple blocking bands of which a period is originated from the SET. Such a novel function was implemented efficiently with a few transistors by making full use of the periodic nature of SET characteristics.     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

Design of bidirectionally pumped fiber amplifiers generating doubleRayleigh backscattering

Optimum pumping schemes for bidirectionally pumped distributed fiber amplifiers are evaluated that simultaneously minimize the beat noise between signal and amplified spontaneous emission, as well as between signal and double Rayleigh backscattering. A way of adding a constraint on signal power to describe operation in a strong Kerr fiber nonlinearity regime is included. We show that one can find an optimum Raman net gain, as well as a percentage of forward to total Raman pumping maximizing the signal-to-noise ratio at the end of a transmission line using bidirectionally Raman-pumped transmission fibers