ESR Refining Potential for Titanium Alloys using a CaF2‐based Active Slag

Since the end of the Cold War and due to the needs to produce titanium more cost‐efficient and thus more attractive for its civilian use, the electroslag remelting (ESR) process has become an increasingly important topic of international research programmes, because titanium and titanium aluminides can be chemically refined by ESR in some degree. Using ESR, titanium turnings from machining steps and scrap from foundries can be remelted, refined and provided as secondary titanium for the market at relatively favourable prices. This article investigates the removability of the main impurities out of titanium and titanium‐aluminium alloys by electroslag remelting using the active slag system CaF₂‐Ca‐(CaO). Thermochemical and kinetic aspects of the ESR process are considered.     

合成2,4-二叔丁基苯酚工业试验

以离子交换树脂为催化剂，苯酚和甲基叔丁基醚为原料合成2，4-二叔丁基苯酚(简称2，4酚)，合成产物经过滤再经间歇真空精馏精制提纯，得到高纯度的2，4酚成品。成品精馏后釜中残液在酸性白土催化剂的作用下通过歧化反应生成对叔丁基苯酚，再经精馏提纯得到成品对叔丁基苯酚。通过工艺优化，使2，4酚、对叔丁基苯酚形成联产生产工艺，降低了生产原料消耗和成本。     

Hydriding and Dehydriding Characteristics of Mechanically Alloyed LaMg_(17) Ni Composite Material

Magnesiumandmagnesiumalloyshavebeenin vestigatedashydrogenstoragematerialsforseveralde cadesbecausefarmorehydrogenbyweightcanbestoredinthemthaninmostoftheothercurrentlyknownhydrogenstoragealloys .Moreover ,thehighnaturalabundanceofMg ,itslightmassandenviron mentalcompatibilitypotentiallymakemagnesiumoneofthemostprospectivecandidatesforfuturehydrogenstoragematerials .Unfortunately ,thepracticalappli cationofMganditsalloyshasbeenlimitedonlytocertainstoragedevicebecauseoftheirpoorhydriding dehydr…     

基于加载算法的室内无线信道OFDM接收机的性能

本文研究了无线局域网中使信号频谱得到优化的一种简单OFDM子载波加载算法。此算法基于边缘自适应（Margin Adaptive）加载准则及其在室内无线信道上的性能。     

Freestanding Alumina Membrane by Double-Layer Anodization

A novel method has been developed for fabricating full or partial freestanding anodic alumina. In our method a sacrificial metal layer is introduced between an Al film and a Si₃N₄ substrate. A freestanding alumina film at wafer scale is successfully achieved by anodizing the double metal layer, during which the alumina is spontaneously stripped off the Si₃N₄ substrate due to the anodic oxidation of the sacrificial layer. The barrier oxide of the alumina film is effectively removed either by H₃PO₄ dissolution or by CF₄ reactive ion etching. The freestanding alumina film is utilized as a contact mask to transfer its nanoporous pattern to a Si substrate. By patterning the sacrificial metal layer with contact lithography, a partial freestanding alumina film is successfully achieved on the silicon chip, producing a unique micro/nanofluidic channel. Compared with previous techniques, the method reported here is advantageous for its simplicity and flexibility