Electrotunable Non‐reciprocal Laser Emission from a Liquid‐Crystal Photonic Device

A liquid crystal (LC) photonic device with an anisotropic optical heterojunction structure has been fabricated. The device has a phase‐retarding nematic LC (NLC) layer sandwiched between two polymer cholesteric LC films with right‐handed helices of different pitches. Electrotunable non‐reciprocal light transmittance and unidirectional circularly polarized (CP) lasing emission have been successfully demonstrated for this device structure. Two left CP (LCP) lasing emission peaks are observed at the edges of the overlapping region between the two photonic bands in the structure and are shifted upon the application of a voltage. In contrast, a non‐reciprocal right CP (RCP) lasing emission peak emerges at one of the band edges and diminishes upon the application of a voltage. These phenomena are interpreted based on the selective reflection of RCP light and the reorientation of the NLC molecules by the application of a voltage.     

A fiber depolarizer using polarization beam splitter loop structure for narrow linewidth light source

A new fiber depolarizer employing a polarization beam splitter loop structure is proposed and demonstrated. The depolarizer is devised for broad-band operation and the depolarization of narrow linewidth light source without any help of polarization controllers or Faraday rotator mirrors. A polarizing method is developed that shows good performance without polarization control unit. Therefore, the proposed depolarizer can be cost-effective and easily configured. From experiments, low output degree of polarization less than 10% is obtained for a narrow linewidth light source.     

Parasitic-aware RF circuit design and optimization

RF circuit synthesis techniques based on particle swarm optimization and adaptive simulated annealing with tunneling are described, and comparisons of parasitic-aware designs of an RF distributed amplifier and a nonlinear power amplifier are presented. Synthesized in 0.35-/spl mu/m digital CMOS using a single 3.3-V power supply, the designs provide an 8-dB gain and 8-GHz bandwidth for a four-stage distributed amplifier, and 1.2-W output power with 55% drain efficiency at 900 MHz for a three-stage power amplifier. A standard circuit simulator, HSPICE or SPECTRE, embedded in an optimization loop is used to evaluate cost functions. The proposed design and optimization methodology is computationally efficient and robust in searching complex multidimensional design spaces.     

Fatigue growth of multiple-cracks near a row of fastener-holes in a fuselage lap-joint

The fatigue growth of multiple cracks, of arbitrary lengths, emanating from a row of fastener holes in a bonded, riveted, lap joint in a pressurized aircraft fuselage is studied. The effects of residual stresses due to a rivet misfit, and of plastic deformation near the hole, are included. A Schwartz-Neumann alternating method which uses the analytical solution for a row of multiple colinear cracks in an infinite sheet (the crack-faces being subject to arbitrary tractions), is developed to analyze this MSD problem on a personal computer. It is found that for a range of crack lengths, a phenomena wherein the shorter cracks may grow faster than longer cracks may exist.     

Microwave induced plasma processing of nuclear waste calcines

Microwave induced plasma processing was used to sinter synthetic Idaho Chemical Processing Plant (ICPP) alumina and zirconia based high level nuclear waste calcines in a nitrogen atmosphere. The microwave densification behaviour of these nuclear waste calcines was observed parallel with identification of the phases formed after sintering. Sintered densities of > 3.20 g cm^–3 were obtained within 10 min of microwave sintering of pure calcines. Glass frit containing calcines showed lower sintering densities (< 2.0 g cm^–3) due to reactions between the frit and volatile substances in both zirconia based and alumina based calcines; prior removal of frit volatiles increased the sintered density. Phases formed in the microwave sintered calcines were identified by X-ray diffraction.     

Semiconductor optical amplifier for CWDM operating over 1540-1620 nm

A semiconductor optical amplifier was developed for coarse wavelength-division-multiplexing (CWDM) operating over 1540-1620 nm (C-L band). A unique quantum-well structure was designed to meet the requirements for the CWDM operation such as wide bandwidth, low polarization-dependent gain, and high-saturation power at the short wavelength end of the band (1540 nm). Over the band, 24-dB maximum chip gain was obtained with less than 4.3-dB gain flatness and more than 14.6-dBm saturation power.     

Pseudorandomness of Basic Structures in the Block Cipher KASUMI

The notion of pseudorandomness is the theoretical foundation on which to consider the soundness of a basic structure used in some block ciphers. We examine the pseudorandomness of the block cipher KASUMI, which will be used in the next‐generation cellular phones. First, we prove that the four‐round unbalanced MISTY‐type transformation is pseudorandom in order to illustrate the pseudorandomness of the inside round function FI of KASUMI under an adaptive distinguisher model. Second, we show that the three‐round KASUMI‐like structure is not pseudorandom but the four‐round KASUMI‐like structure is pseudorandom under a non‐adaptive distinguisher model.     

50-nm Self-Aligned and “Standard” T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node

Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date. In addition, more recent research has begun to focus on reducing the parasitic device elements such as access resistance and gate fringing capacitance, which become crucial for short gate length device performance maximization. Adopting a self-aligned T-gate architecture is one method used to reduce parasitic device access resistance, but at the cost of increasing parasitic gate fringing capacitances. As the device gate length is then reduced, the benefits of the self-aligned gate process come into question, as at these ultrashort-gate dimensions, the magnitude of the static fringing capacitances will have a greater impact on performance. To better understand the influence of these issues on the dc and RF performance of short gate length InP pHEMTs, the authors present a comparison between In_0.7Ga_0.3As channel 50-nm self-aligned and "standard" T-gate devices. Figures of merit for these devices include transconductance greater than 1.9 S/mm, drive current in the range 1.4 A/mm, and fT up to 490 GHz. Simulation of the parasitic capacitances associated with the self-aligned gate structure then leads a discussion concerning the realistic benefits of incorporating the self-aligned gate process into a sub-50-nm HEMT system     

Master sintering curve concepts as applied to the sintering of molybdenum

Sintering experiments with various molybdenum powders are rationalized using a master sintering curve concept that collapses density, grain size, or other parameters onto a single curve. In this case, the integral work of sintering is developed and customized for different green densities. Construction of the master sintering curve is described to show how the curve can be normalized with respect to green density effects. Various grades of molybdenum for metal injection molding and die compaction are included in the analysis, processed over a range of heating cycles. Die-compacted samples of varying green densities are used to illustrate the efficacy of the new, normalized master sintering curve concept. Sintering cycle optimization is one possible outcome from this analysis.