Influence of joint detail on the flexural/torsional interaction of thin-walled structures

For a structure formed from two thin-walled open members connected at 90°, torsion applied to one member can result in torsion as well as flexure in the second member, with the magnitude and direction of this torsion as well as flexure in the second member being determined by the type of joint used. Conventional structural analysis would normally assume the presence of only flexure in the second member. The results from a finite element study of structures formed from thin-walled channel sections connected by box, mitre and stiffened mitre joints is presented and an explanation for the behaviour of the different joint types is given. It is shown that for the box joint the warping deformation of the loaded member is the dominant factor in determining the magnitude and direction of the twisting of the second member, whilst this is determined for the stiffened mitre joint primarily by the St Venant rotation deformation of the loaded member. For the unstiffened joint it is shown that the warping and St Venant rotation deformation effects tend to cancel each other out.     

THE FRACTURE MECHANISM OF 475°C EMBRITTLEMENT IN A DUPLEX STAINLESS STEEL

The mechanism of “475°C embrittlement” of a duplex stainless steel was investigated using finite element modelling of the stress distribution at brittle fracture initiation. Brittle fracture initiated at a critical shear stress, which increased with ferrite hardness. The fracture stress was affected by the duplex microstructure. Fracture was nucleated by deformation twins, which were identified using electron back-scatter diffraction. The ductile-to-brittle fracture transition was sensitive to age-hardening and could be described simply by the effect of age-hardening and test temperature on the yield stress.     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

The Effect of Organic Ligands on the Rate of Loss of Phenylmercuric Nitrate into Rubber Closures and Plastic Containers

The effect of the presence of various organic compounds containing a variety of functional groups on the rate of loss of phenylmericuric (PM) nitrate into plastic containers and rubber closures has been investigated. The presence of organic compounds profoundly influenced the loss of the phenylmercuric nitrate, that loss being dependent upon their chemical structure and concentration. This effect explains the unpredictability of the loss of PM nitrate into polymer matrices from pharmaceutical products.     

Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition

The effects of nitrogen-beam voltage on the structure, stress, energy band gap and hardness of AIN thin films deposited on Si (111), Si (100) and sapphire (0001) by ion beam assisted deposition (IBAD) are reported. As the nitrogen-beam voltage was increased from 50 to 200 V, the stress and disorder in the AIN films increased as determined by X-ray diffraction, FTIR and Raman spectroscopy. The preferred orientation of the film's c-axis changed from completely normal to the film at 100 V, to a mixture of normal and in the plane of the film at 200 V. For AIN films deposited under the same conditions, the films were more highly oriented on sapphire (0001) than in Si (111). The hardness of the films increased from 18.2 to 23.7 GPa with the nitrogen-beam voltage, and possible reasons for this change in hardness are considered.