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991.
Multirate adaptive filters have numerous advantages such as low computational load, fast convergence, and parallelism in the adaptation. Drawbacks when using multirate processing are mainly related to aliasing and reconstruction effects. These effects can be minimized by introducing appropriate problem formulation and employing sophisticated optimization techniques. In this paper, we propose a formulation for the design of a filter bank which controls the distortion level for each frequency component directly and minimizes the inband aliasing and the residual aliasing between different subbands. The advantage of this problem formulation is that the distortion level can be weighted for each frequency depending on the particular practical application. A new iterative algorithm is proposed to optimize simultaneously over both the analysis and the synthesis filter banks. This algorithm is shown to have a unique solution for each iteration. For a fixed distortion level, the proposed algorithm yields a significant reduction in both the inband aliasing and the residual aliasing levels compared to existing methods applied to the numerical examples.  相似文献   
992.
Five new salts based on 1-alkyl-2-methyl pyrrolinium ion are reported, two involving the iodide ion and three involving the bis(trifluoromethanesulfonyl) amide ion. The iodide salts have melting points around 100 °C, while the amide salts have melting points around room temperature. Two of the amide salts can be easily quenched into the glassy state and exhibit glass transition temperatures around −70 °C. The 2-methyl pyrrolinium cation bears structural similarities to the aromatic imidazolium cations on one hand and the cyclic ammonium cation family based on the pyrrolidinium cation on the other. The properties of the salts reported here are compared within these two related families of salts.  相似文献   
993.
We have studied vortex dynamics in Bi2Sr2CaCu2O8 single crystal with low density columnar defects by using a magnetic force microscope. Single crystal Bi2Sr2CaCu2O8 sample was irradiated by 1.3 GeV uranium ion to form artificial pinning centers along the crystalline c-axis. The irradiation dose corresponded to a matching field of 20 gauss. The radius of an individual vortex is approximately 140 nm, which is close to the penetration depth of this material. Magnetic force microscope (MFM) images show that intrinsic crystalline defects such as stacking fault dislocations are very effective pinning centers for vortices in addition to the pinning centers due to ion bombardment. By counting the number of vortex, we found that the flux trapped at each pinning center is a single flux quantum. At higher magnetic field, the vortex structure showed an Abrikosov lattice disturbed only by immobile vortices located at pinning centers. When increasing or decreasing the external magnetic field, the spatial distribution of vortices showed a Bean model like behavior.  相似文献   
994.
The interfacial microstructures of 96 and 98% polycrystalline alumina joined with single crystal sapphire have been investigated in relation to the joining parameters. Joining has been evaluated based on either using a thin spin-on silica interlayer or by placing the alumina and sapphire in direct contact. The materials were joined by placing the coated or uncoated surfaces in contact and heating in the range of 1340–1475 °C with minimum external load. With the aid of a silica interlayer, sapphire and 98% polycrystalline alumina were successfully joined in 180 min at 1400 °C and above, while samples without a silica interlayer failed to join under these conditions. However, sapphire and 96% polycrystalline alumina were joined both with and without the use of silica interlayer. A variety of interfacial morphologies have been observed, including amorphous regions, fine crystalline alumina, and intimate contact between the sapphire and polycrystalline alumina.  相似文献   
995.
A defect-free, two-material component can be obtained via co-sintering by suitably altering the powder characteristics or compositions, as demonstrated in Part I. In this paper, a model to ascertain the suitability of material systems to be co-sintered without defects such as delamination or interface pores is presented. The model is based on the management of the stress induced due to the difference in shrinkage and an analysis of the in situ strength of the weaker material during sintering. Tool steel in combination with stainless steel admixed with boron and Fe-2Ni admixed with boron are two systems used to validate the model. The predictions of the model are in good agreement with the observations.  相似文献   
996.
This paper examines the current status and methodologies of study of material and system reliability in Microelectromechanical Systems (MEMS). This includes: a review of the current literature in the area of MEMS regarding failure analysis experimental investigations; testing methods and philosophies for material characterization and possible mechanistic analytical solutions for estimating material properties. The paper proposes a reliability framework that encompasses all the available information. This statistical platform will enable the MEMS design engineer to distill all the available information in the literature into a stand-alone semi-empirical material reliability model, and a holistic system-level model for a complete system.  相似文献   
997.
An experiment is reported on the effect of 60Co gamma rays or 45-keV x-ray photons on the GaAs/(Al, Ga)As PHEMT. It is shown that x-ray treatment can improve the dc performance of the device in some cases. This finding is attributed in part to the annealing or modification of DX centers.  相似文献   
998.
We develop a method to estimate the variation of leakage current due to both intra-die and inter-die gate length process variability. We derive an analytical expression to estimate the probability density function (PDF) of the leakage current for stacked devices found in CMOS gates. These distributions of individual gate leakage currents are then combined to obtain the mean and variance of the leakage current for an entire circuit. We also present an approach to account for both the inter- and intra-die gate length variations to ensure that the circuit leakage PDF correctly models both types of variation. The proposed methods were implemented and tested on a number of benchmark circuits. Comparison to Monte Carlo simulation validates the accuracy of the proposed method and demonstrates the efficiency of the proposed analysis method. Comparison with traditional deterministic leakage current analysis demonstrates the need for statistical methods for leakage current analysis.  相似文献   
999.
Thermodynamic analysis is used to identify the possible chemical reactions of CdTe and ZnTe with the container material and gaseous atmosphere during Bridgman growth. Thermodynamic parameters of carbide and oxycarbide formation in the growth system are evaluated. The calculation results are consistent with the well-known fact that oxygen-containing impurities can be removed from the growth charge by calcination in hydrogen. Moreover, as shown in experiment, the removal of oxygen from the charge ensures a substantial decrease in the carbon content of the crystals.  相似文献   
1000.
We present a study of magneto-thermal instabilities in polycrystalline MgB2 superconductor, by magnetic hysteresis loop measurements and by investigations of magnetic flux dynamics with a miniature Hall probe. Temperature and magnetic field ranges where the flux jumps may be observed have been determined. On the basis of measurements of the magnetic flux dynamics, an average magnetic diffusivity describing the process of the flux jump is estimated. This parameter is compared with the thermal and magnetic diffusivities calculated on the basis of available data for thermal conductivity, heat capacity and resistivity. It is shown that the estimated value of the field of the first flux jump is influenced significantly by the field dependence of specific heat. In order to explain the observed phenomenon, the temperature reached by the sample during the flux jump at different magnetic fields is calculated.  相似文献   
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