EFFECT OF THE RATIO Th/U ON TL DATING ACCURACY

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Multitemporal passive microwave mapping in MACHYDRO'90

MACHYDR0'90 was an experiment conducted in Pennsylvania in 1990 to study the synergistic use of remote sensors in multitemporal hydrologic studies. As part of this mission the pushbroom microwave radiometer was flown and used to produce brightness temperature maps. Verification studies and vegetation algorithms for mixed land cover areas are described     

Simultaneous solution of emission transfer and thermal conductivityequations in the problems of atmosphere and subsurface radiothermometry

Expressions are derived that relate the half-space temperature profile and the heat flux with the brightness temperature evolution. Remote sensing methods are proposed to measure the temperature and heat flux in the atmosphere and subsoil layer by radiometric measurements     

Controlling for stimulus dominance in dichotic listening tests: A modification of !l.

Dichotic listening procedures have been used to assess cerebral lateralization in normal Ss. One particularly useful technique is the use of stimuli that fuse into a single percept. Although this procedure has many advantages over other dichotic listening methods, it is particularly susceptible to stimulus dominance, which acts as noise in a S's response data, thus reducing the power of any statistical test of the ear advantage. It is proposed that the solution to this problem is a log-linear analysis of the response data to yield a λ-type index (λ*) that is a measure of ear dominance independent of stimulus dominance. Details of the analysis are provided, as well as a sample analysis of data collected from 104 right-handed and 30 left-handed Ss. Comparisons are drawn between the log-linear analysis and other methods that have been proposed to control for stimulus dominance in this single-response dichotic fusion procedure. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Protocol design and performance analysis for manufacturing messagespecification: A Petri net approach

The manufacturing message specification (MMS) is the ISO standard communication protocol specific to manufacturing. To analyze MMS design and performance, service unit automats are introduced to represent individual MMS services, while service connection Petri Nets (PNs) are constructed from these automats to describe MMS service connections and processes. This approach makes MMS protocol specification and analysis possible in terms of well-developed concepts and methods in PN theory. It leads to a distributed and hierarchical model of MMS software system by integrating service connection PNs. A generalized stochastic PN for MMS performance evaluation is obtained by incorporating service parameters and time factors into the model. A technique based on T-invariants is used to simplify the performance analysis     

A novel scheme for protection of power semiconductor devicesagainst short circuit faults

Power semiconductor devices find wide application in modern power electronic converters. Protection of these devices against overload/short circuit conditions is of paramount importance. Present day protection topologies employing different circuits have invariably one main drawback in that the fault current reaches the set value before action is initiated to trip the system. This poses a severe stress on the device. Hence an adequate safety margin has to be necessarily provided to prevent excessive device stresses and care has to be taken to see that the device is operated well within its safe operating areas. The present paper proposes a method wherein the slope or rate of rise of the fault current is detected and once the slope exceeds the set reference, action is initiated to trip the system much before the fault current reaches dangerous levels. The method provides a fast means of detection of overload and short circuit currents and can be conveniently adopted for the protection of devices in power transistor/IGBT based inverters against short circuited load conditions or shoot through faults. The possible reduction of stresses in the power devices are also highlighted     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate