New generation of hydrotreating catalysts

Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 2, pp. 2–4, February, 1991.     

On the Pulse Response of a Flush-Mounted Coaxial Aperture

The radiation field pattern of a flush-mounted coaxial aperture is derived in the frequency domain. By using the Lorentz reciprocity theorem, the equivalent current generator is obtained which drives the apparent annular antenna admittance in shunt with the load admittance. The current source, aperture admittance, and load admittance determine the transfer function. The transfer function multiplied by the expression for the spectrum of the incident pulse forms the integrand of the Fourier transform from which the time history of the current waveform in the load admittance may be obtained using a computer. There are several applications of the theory. The one of dominant interest at present may be described as follows. A coaxial transmission line terminated in a known load admittance is located in the interior of a missile. The free end of the cable forms an aperture antenna at the skin of the missile, i.e., at the normal junction of coaxial connectors. The problem is to determine the time history of the current in the load admittance when an intense transient electromagnetic field impinges on the receiving antenna. Very accurate numerical results may be obtained from this theory provided the ground plane is sufficiently large and certain dimensional limitations on the sizes of the inner conductor and sheath of the coaxial aperture (expressed in terms of the wavelength) are met.     

In situ X-ray diffraction study of melting in gold contacts to gallium arsenide

By in situ X-ray diffraction, we have obtained direct evidence for the distinction in melting temperature between the first and subsequent heating in ～ 1000 Å gold contacts to GaAs. During the first heating, melting occurred at 456–500°C and is attributed to the melting of a reaction product tentively identified as the orthorhombic AuGa compound (50 at.% Ga), which formed in the solid state. The minimum temperature required for the solid-state reaction and the melting temperature decreased with decreasing hydrostatic pressure. During second and subsequent heating, melting occurred at 410–415°C and is attributed to the melting of β AuGa (or Au₇Ga₂), which formed after the first melting-solidification cycle. At high cooling rates (e.g. 40°C/min) during the first solidification, β was observed together with a phase (tentative Au₂Ga) which increased in proportion with increasing cooling rate.     

Improved theory for microstrip antennas

An improvement to a recently reported theory for the analysis of the pattern and impedance loci of microstrip antennas is developed. It yields a theory that is simple and inexpensive to apply. This is achieved by lumping all antenna losses into an effective dielectric loss tangent and then analysing the microstrip antenna as a lossy cavity. It is found that the resulting expression for impedance of the microstrip antenna is in good agreement with measured results for all modes and feed locations.     

Cut-off frequency in radially inhomogeneous single-mode fibre

The limit for single-mode operation in a graded-index fibre has been obtained by calculating the normalised cut-off frequency of the TE01 mode, The affect of diffusion at the core-cladding boundary has been estimated.     

Effect of dip in the referctive index on the cut-off frequency of a single-mode fibre

The normalised frequency for single-mode cut-off in an optical fibre has been calculated as a function of the dip in the refractive index at the centre of the core. For a particular class of profiles, dip width up to 40% have a negligible effect on the propagation characteristics.     

Offset frequency stabilization of RF excited waveguide CO2 laser arrays

A close-packed array of waveguide lasers provides an offset frequency which is inherently more stable than that from independent devices, and permits difference frequency tuning based on the tilting of a common resonator mirror. Examples are given for two- and three-channel arrays. Passive stability of the beat frequencies between channels generated by this tuning method is shown to be good, and for two channel arrays was further enhanced by using an electronic stabilization loop. A simple model of the control loop is formulated to express the relationship between the loop parameters and resultant improvement in frequency stability. The model parameters are compared to experimental results through Allan variance measurements. An Allan variance minimum of 20 Hz has been achieved for the two-channel system and areas for further improvements are considered     

High temperature superconducting transresistance amplifiers for farinfrared detectors

Far-infrared (IR) focal plane arrays are becoming increasingly important for terrestrial and space-based imaging applications. For noise reasons, it is desirable to have transresistance preamplifiers at the focal plane, and, therefore, they need to operate over wide temperature ranges. High-temperature superconducting (HTS) amplifiers that have a high gain, relatively low noise, and response times of <200 ps over at least a 10-80-K temperature range have been developed     

Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering

High-resolution x-ray diffraction patterns and 90 K microcathodoluminescence (MCL) spectra were taken for undoped, symmetric AlGaN/GaN superlattices (SLs) with GaN quantum-well (QW) widths of 35 Å and 80 Å. The short-period SL spectra were blue shifted by about 60 meV compared to the GaN substrate, and the magnitude of the blue shift was increased by about 20 meV by application of a reverse bias of ?3 V (electric field of about 4 · 10⁵ V/cm) to a Schottky diode prepared on this SL. A small red shift of about 40 meV compared to GaN was observed for the long-period SL. The two latter observations were interpreted as manifestations of the presence of a strong built-in piezoelectric field, giving rise to the quantum-confined Stark effect (QCSE). Partial disordering of the short-period SL was observed after Ar ion implantation (energy 150 keV, dose 8·10¹³ cm^?2 and 80 keV, 2·10¹³ cm^?2) and subsequent annealing at 1000°C for 3 h under the protective layer of Si₃N₄. However, it was observed that this partial disordering was accompanied by strain relaxation via formation of misfit dislocations or cracks.     

Effects of quasi-ballistic base transport on the high-frequencycharacteristics of bipolar transistors

High-frequency transport in bipolar transistors with quasi-ballistic base widths (on the order of a minority-carrier scattering length) is examined by using the approach of Grinberg and Luryi (1992) to solve the Boltzmann transport equation (BTE). By considering the phase angle of the dynamic distribution function in wave-vector space, it is shown that the ballistic mechanism of decay in the common-base current gain becomes important even for base widths in the quasi-ballistic regime. Simple expressions, which correctly yield both the magnitude and phase of all the forward characteristics, as predicted by the BTE, up to the intrinsic transit frequency, are found by combining the results from a one-flux approach with the well-known expressions of Thomas and Moll (1958). Expressions for the reverse small-signal parameters are also found by applying a “moving boundary condition” to the basic one-flux equations of Shockley (1962)