Design and Fabrication of Asymmetric MOSFETs Using a Novel Self-Aligned Structure

A novel asymmetric MOSFET with no lightly doped drain on the source side is simulated on bulk Si using a device simulator (SILVACO). To overcome the problems of the conventional asymmetric process, a novel asymmetric MOSFET using a mesa structure and a sidewall spacer gate is proposed, and it provides a self-alignment process, aggressive scaling, and better uniformity. First of all, we have compared the simulated characteristics of the asymmetric and symmetric MOSFETs. Basically, both asymmetric and symmetric MOSFETs have an n-type channel and the same physical parameters. Compared with the symmetric MOSFET, the asymmetric MOSFET shows better device performance. Moreover, we have successfully fabricated 50-nm asymmetric NMOSFETs based on simulation results and investigated its operation and characteristics.     

Surface Chemistry of Vitamin: Pyridoxal 5′‐Phosphate (Vitamin B6) as a Multifunctional Compound for Surface Functionalization

Vitamins are non‐toxic compounds that perform a variety of biological functions and also available in a large quantity. Other than the usage as food supplements, few attempts have been made to use them as functional materials. In this study, we report that vitamin B6, pyridoxal 5′‐phosphate (PLP), is a multi‐functional molecule for oxide surface chemistry. PLP‐immobilized surfaces exhibit superhydrophilicity and even hemophilicity, enhancing proliferation, migration, and differentiation of mammalian cells. Unlike existing molecules used so far in surface modification, PLP has an intrinsic chemical reactivity toward biomacromolecules due to the presence of the aldehyde group. In fact, RGD peptide is covalently tethered onto PLP surfaces directly in one step without any chemical activation. Furthermore, PLP‐functionalized implant device showed rapid bone healing. As vitamin B6 is a FDA approved molecule for human usage, the surface chemistry of vitamin B6 potentially allows a fast route for surface functionalized medical devices into clinic.     

Computer-aided diagnosis of solid breast nodules: use of an artificial neural network based on multiple sonographic features

A computer-aided diagnosis (CAD) algorithm identifying breast nodule malignancy using multiple ultrasonography (US) features and artificial neural network (ANN) classifier was developed from a database of 584 histologically confirmed cases containing 300 benign and 284 malignant breast nodules. The features determining whether a breast nodule is benign or malignant were extracted from US images through digital image processing with a relatively simple segmentation algorithm applied to the manually preselected region of interest. An ANN then distinguished malignant nodules in US images based on five morphological features representing the shape, edge characteristics, and darkness of a nodule. The structure of ANN was selected using k-fold cross-validation method with k = 10. The ANN trained with randomly selected half of breast nodule images showed the normalized area under the receiver operating characteristic curve of 0.95. With the trained ANN, 53.3% of biopsies on benign nodules can be avoided with 99.3% sensitivity. Performance of the developed classifier was reexamined with new US mass images in the generalized patient population of total 266 (167 benign and 99 malignant) cases. The developed CAD algorithm has the potential to increase the specificity of US for characterization of breast lesions.     

High-field mobility effects in reoxidized nitrided oxide (ONO)transistors

The high-field mobility behavior of silicon MOSFETs fabricated with reoxidized nitrided oxide (ONO) gate dielectrics has been investigated. Measurements have been performed at both room temperature and 77 K on both n- an p-channel FETs, for both ONO and conventional SiO ₂ films. While the peak electron mobility is much higher for standard SiO₂, a crossover occurs in the high-field region beyond which ONO transistors exhibit higher mobility. The crossover voltage is reduced at 77 K. Measurements intended to gain further insight into this phenomenon suggest that differences in surface roughness scattering, or the buried-channel nature of an ONO NMOS transistor, are the most likely explanations for the high-field mobility behavior observed     

Modeling of spiking analog neural circuits using organic semiconductor thin film transistors with silicon oxide nitride semiconductor gates

This paper uses the results of the characterization of amorphous semiconductor thin film transistors (TFTs) with the quasi-permanent memory structure referred to as silicon oxide nitride semiconductor (SONOS) gates, to model spiking neural circuits. SONOS gates were fabricated and characterized. In addition, MOSFETs using organic copper phthalocyanine (CuPc) were fabricated with these SONOS gates to demonstrate proof of concept performance. Analog spiking circuits were then modeled using these low performance TFTs to demonstrate the general suitability of organic TFTs in neural circuits. The basic circuit utilizes a standard comparator with charge and discharge circuits. A simple Hebbian learning circuit was added to charge and discharge the SONOS device. The use of these elements allows for the design and fabrication of high-density 3-dimensional circuits that can achieve the interconnect density of biological neural systems.     

Well‐Defined Functional Linear Aliphatic Diblock Copolyethers: A Versatile Linear Aliphatic Polyether Platform for Selective Functionalizations and Various Nanostructures

Low‐temperature anionic ring‐opening homopolymerizations and copolymerizations of two glycidol derivatives (allyl glycidyl ether (AGE) and ethoxyethyl glycidyl ether (EEGE)) are studied using a metal‐free catalyst system, 3‐phenyl‐1‐propanol (PPA) (an initiator) and 1‐tert‐butyl‐4,4,4‐tris(dimethylamino)‐2,2‐bis[tris‐(dimethylamino)phosphoranylidenamino]‐2Λ⁵,4Λ⁵‐catenadi(phosphazene) (t‐Bu‐P₄) (a promoter) in order to obtain well‐defined functional linear polyethers and diblock copolymers. With the aid of the catalyst system, AGE is found to successfully undergo anionic ring‐opening polymerization (ROP) even at room temperature (low reaction temperature) without any side reactions, producing well‐defined linear AGE‐homopolymer in a unimodal narrow molecular weight distribution. Under the same conditions, EEGE also undergoes polymerization, producing a linear EEGE‐homopolymer in a unimodal narrow molecular‐weight distribution. In this case, however, a side reaction (i.e., chain‐transfer reaction) is found to occur at low levels during the early stages of polymerization. The chemical properties of the monomers in the context of the homopolymerization reactions are considered in the design of a protocol used to synthesize well‐defined linear diblock copolyethers with a variety of compositions. The approach, anionic polymerization via the sequential step feed of AGE and EEGE as the first and second monomers, is found to be free from side reactions at room temperature. Each block of the obtained linear diblock copolymers undergoes selective deprotection to permit further chemical modification for selective functionalization. In addition, thermal properties and structures of the polymers and their post‐modification products are examined. Overall, this study demonstrates that a low‐temperature metal‐free anionic ROP using the PPA/t‐Bu‐P₄ catalyst system is suitable for the production of well‐defined linear AGE‐homopolymers and their diblock copolymers with the EEGE monomer, which are versatile and selectively functionalizable linear aliphatic polyether platforms for a variety of post‐modifications, nanostructures, and their applications.     

40 GHz Vertical Transition with a Dual‐Mode Cavity for a Low‐Temperature Co‐fired Ceramic Transceiver Module

A new vertical transition between a substrate integrated waveguide in a low‐temperature co‐fired ceramic substrate and an air‐filled standard waveguide is proposed in this paper. A rectangular cavity resonator with closely spaced metallic vias is designed to connect the substrate integrated waveguide to the standard air‐filled waveguide. Physical characteristics of an air‐filled WR‐22 to WR‐22 transition are compared with those of the proposed transition. Simulation and experiment demonstrate that the proposed transition shows a ?1.3 dB insertion loss and 6.2 GHz bandwidth with a 10 dB return loss for the back‐to‐back module. A 40 GHz low‐temperature co‐fired ceramic module with the proposed vertical transition is also implemented. The implemented module is very compact, measuring 57 mm × 28 mm × 3.3 mm.     

Soluble processed low-voltage and high efficiency blue phosphorescent organic light-emitting devices using small molecule host systems

We report low voltage driving and highly efficient blue phosphorescence organic light emitting diodes (PHOLEDs) fabricated by soluble process. A soluble small molecule mixed host system consisting of hole transporting 4,4’,4’’ tris(N-carbazolyl)triphenylamine (TCTA) and bipolar carrier transporting 2,6-bis(3-(carbazol-9-yl)phenyl)pyridine (26DCzPPy) exhibits high solubility with smooth surface properties. Moreover, this small molecule host shows the smoothest morphological property similar to a vacuum deposited amorphous film. A low driving voltage of 5.4 V at 1000 cd/m² and maximum external quantum efficiency 14.6% obtained in the solution processed blue PHOLEDs are useful for large area low cost manufacturing.     

Threshold voltage reduction model for buried channel PMOSFETs using quasi-2-D Poisson equation

A quasi-two-dimensional (2-D) threshold voltage reduction model for buried channel pMOSFETs is derived. In order to account for the coexistence of isoand anisotype junctions in a buried channel structure, we have incorporated charge sharing effect in the quasi-2-D Poisson model. The proposed model correctly predicts the effects of drain bias (V/sub DS/), counter doping layer thickness (x/sub CD/), counter doping concentration (N/sub CD/), substrate doping concentration (N/sub sub/) and source/drain junction depth (x/sub j/), and the new model performs satisfactorily in the sub-0.1 /spl mu/m regime. By using the proposed model on the threshold voltage reduction and subthreshold swing, we have obtained the process windows of the counter doping thickness and the substrate concentration. These process windows are very useful for predicting the scaling limit of the buried channel pMOSFET with known process conditions or systematic design of the buried channel pMOSFET.     

Effects of PAI on interface properties between HfSiO gate dielectric and silicon substrate

The effects of preamorphization implantation (PAI) on the interface properties between hafnium-silicate (HfSiO) gate dielectrics and silicon substrates were examined. In the case of an NH/sub 3/ nitrided interface, it was found that the PAI can improve the interface trap density (D/sub IT/) compared with the no PAI case. However, for the PAI samples, it was also found that samples with sacrificial screening oxide (Sac Ox) had worse interface properties compared with the samples without Sac Ox. It is attributed to the recoiled oxygen from Sac Ox during PAI.