Hybrid multiferroic nanostructure with magnetic-dielectric coupling

The development of methods to economically synthesize single wire structured multiferroic systems with room temperature spin-charge coupling is expected to be important for building next-generation multifunctional devices with ultralow power consumption. We demonstrate the fabrication of a single nanowire multiferroic system, a new geometry, exhibiting room temperature magnetodielectric coupling. A coaxial nanotube/nanowire heterostructure of barium titanate (BaTiO(3), BTO) and cobalt (Co) has been synthesized using a template-assisted method. Room temperature ferromagnetism and ferroelectricity were exhibited by this coaxial system, indicating the coexistence of more than one ferroic interaction in this composite system.     

Narrow antagonistic activity of antimicrobial peptide from Bacillus subtilis SCK-2 against Bacillus cereus

Bacillus subtilis SCK-2, producing an antimicrobial peptide of this study, was isolated from Kyeopjang, the Korean traditional fermented-soybean paste. This strain showed a narrow antagonistic activity as it inhibited Bacillus cereus causing food poisoning in human. The antimicrobial peptide, tentatively named AMP IC-1, was purified, characterized, and compared to BSAP-254, another peptide which was previously recovered from traditionally fermented-soybean paste. AMP IC-1 was found to be more thermally stable than BSAP-254, retained inhibitory activity similar to that of BSAP-254 over wide range of pH values, and was also destroyed by proteolytic enzymes. Two compounds were detected by anti-BSAP-254 polyclonal antibody and showed to contain peptide moieties and aliphatic hydrocarbons by Fourier transform infrared analysis. AMP IC-1 had an identical R(f) value (0.69) on TLC plate and a molecular weight similar to that of BSAP-254 (AMP IC-1, m/z 3401; BSAP-254, m/z 3400 to 3473). AMP IC-1 was found to contain about 33 residues and 13 types of amino acids: Cys, Asp or Asn, Glu or Gln, Ser, Gly, Arg, Thr, Ala, Pro, Val, Ile, Leu, and Lys. Compared to BSAP-254, the molar ratios of Asp or Asn, Ser, Val, and Leu were different and only AMP IC-1 contained Arg, but not Trp. Both compounds showed non-hemolytic activity. A partial synergistic effect against B. cereus was observed in response to treatment when AMP IC-1 and BSAP-254 were administered in combination. Therefore, AMP IC-1 is a possible candidate as an antimicrobial agent to prevent food-borne infectious disease in human caused by B. cereus.     

A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

We have fabricated an enhancement-mode n-channel Schottky-barrier-MOSFET (SB-MOSFET) for the first time on a high mobility p-type GaN film grown on silicon substrate. The metal contacts were formed by depositing Al for source/drain contact and Au for gate contact, respectively. Fabricated SB-MOSFET exhibited a threshold voltage of 1.65 V, and a maximum transconductance(g/sub m/) of 1.6 mS/mm at V/sub DS/=5V, which belongs to one of the highest value in GaN MOSFET. The maximum drain current was higher than 3 mA/mm and the off-state drain current was as low as 3 nA/mm.     

Novel Rewritable,Non‐volatile Memory Devices Based on Thermally and Dimensionally Stable Polyimide Thin Films

Novel digital memory devices were fabricated with a thermally and dimensionally stable polyimide containing carbazole moieties in its side groups by using a simple and conventional solution coating process. The devices exhibit excellent unipolar ON and OFF switching behavior. With very low power consumption, the devices can be repeatedly written, read, and erased in air. The ON/OFF current ratio of the devices is high up to 10¹¹. The high ON/OFF switching ratio and stability of the devices, as well as their repeatable writing, reading, and erasing capability with low power consumption, open up the possibility of the mass production of high performance non‐volatile memory devices at low cost.     

Millimetre-wave wideband reflection-type CPW MMIC phase shifter

A reflection-type coplanar waveguide (CPW) phase shifter fabricated using a standard monolithic microwave integrated circuit (MMIC) process is presented. Air-gap overlay CPW couplers were employed for wideband 3 dB coupling and low loss at millimetre wave. The two-stage cascaded analogue phase shifter showed insertion losses of 6.9 ± 1.6 dB, return losses > 10 dB, and maximum rms phase error of +5.5° for the relative phase shift from -20° to 135°, over a wideband 27 to 47 GHz     

Damage assessment in layered composites using spectral analysis and Lamb wave

Piezo-ceramic transducers of the surface mounted type are commonly used for structural health monitoring (SHM) techniques. But, there is a disadvantage to use piezo-ceramic transducers of the surface mounted type in Lamb wave application. Due to the symmetric and antisymmetric Lamb wave modes generated by the surface mounted piezo-ceramic transducers simultaneously, the received signals are very complex and it is difficult to extract damage information from the signals.

In this paper, the practical method for SHM was proposed using piezo-ceramic transducers of the surface mounted type and Lamb wave. In order to overcome the difficulties in the signal processing of the simultaneous modes, the symmetric and antisymmetric modes were separated by using the two sensors bonded on the opposite surfaces at the same point. Also, spectral analyses of the separated symmetric and antisymmetric Lamb waves showed that each mode propagated with different frequency characteristics in the exciting frequency range.

By making use of these findings, the changes of power spectrum density in characteristic frequency band of symmetric and antisymmetric modes are proportional to the delamination size in quasi-isotropic Gr/Ep laminates. Therefore, this paper presents the damage assessment technique to extract damage information from the complicated PZT signals that could not be interpreted in time domain.     

Minimizing Cost and Delay in Shared Multicast Trees

Existing tree construction mechanisms are classified into source‐based trees and center‐based trees. The source‐based trees produce a source‐rooted tree with a low delay. However, for the applications with multiple senders, the management overheads for routing tables and resource reservations are too high. The center‐based trees are easy to implement and manage, but a priori configuration of candidate center nodes is required, and the optimization nature such as tree cost and delay is not considered. In this paper, we propose a new multicast tree building algorithm. The proposed algorithm basically builds a non‐center based shared tree. In particular, any center node is not pre‐configured. In the proposed algorithm, a multicast node among current tree nodes is suitably assigned to each incoming user. Such a node is selected in a fashion that tree cost and the maximum end‐to‐end delay on the tree are jointly minimized. The existing and proposed algorithms are compared by experiments. In the simulation results, it is shown that the proposed algorithm approximately provides the cost saving of 30 % and the delay saving of 10 %, compared to the existing approaches. In conclusion, we see that the cost and delay aspects for multicast trees can be improved at the cost of additional computations.     

Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

We have grown high quality GaN layers on (1 1 1)-oriented silicon substrate using a two-step growth method and fabricated high-performance normally-off n-channel GaN Schottky-barrier MOSFET (SB-MOSFET). Indium-tin-oxide (ITO) was used as Schottky-barrier contact for source and drain (S/D) because the work function of ITO is close to the electron affinity of GaN. Due to enhanced crystalline quality and reduced surface roughness of GaN layer grown by two-step process, the fabricated device exhibited much improved performances: sufficiently high threshold voltage of 3.75 V, subthreshold slope of 171 mV/dec, low specific on-resistance of 9.98 mΩ cm², and very high field-effect mobility of 271 cm²/V s. This is the highest mobility value among the GaN MOSFETs ever reported so far.