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81.
Hyun-Chul Kim Author VitaeDaijin KimAuthor Vitae Sung Yang Bang Author Vitae 《Pattern recognition》2003,36(5):1095-1105
Linear discriminant analysis (LDA) is a data discrimination technique that seeks transformation to maximize the ratio of the between-class scatter and the within-class scatter. While it has been successfully applied to several applications, it has two limitations, both concerning the underfitting problem. First, it fails to discriminate data with complex distributions since all data in each class are assumed to be distributed in the Gaussian manner. Second, it can lose class-wise information, since it produces only one transformation over the entire range of classes. We propose three extensions of LDA to overcome the above problems. The first extension overcomes the first problem by modelling the within-class scatter using a PCA mixture model that can represent more complex distribution. The second extension overcomes the second problem by taking different transformation for each class in order to provide class-wise features. The third extension combines these two modifications by representing each class in terms of the PCA mixture model and taking different transformation for each mixture component. It is shown that all our proposed extensions of LDA outperform LDA concerning classification errors for synthetic data classification, hand-written digit recognition, and alphabet recognition. 相似文献
82.
Sol-gel methods offer many advantages over conventional slip-casting, including the ability to produce ceramic membranes. They are purer, more homogeneous, more reactive and contain a wider variety of compositions. We produced ormosil sol using sol-gel process under different molecular weight of polymer species [polyethylene glycol (PEG) ] in total system [Tetraethyl ortho silicate(TEOS)-polyethylene glycol (PEG)]. The properties of as-prepared ormosil sol such as,viscosity, gelation time were characterized. Also, the ceramic membrane was prepared by dip-coating with synthetic sol and its micro-structure was observed by scanning electron microscopy. The permeability and rejection efficiency of membrane for oil/water emulsion were evaluated as cross-flow apparatus. The ormosil sol coated Membrane is easily formed by steric effect of polymer and it improves flux efficiency because infiltration into porous support decreased. Its flux efficiency is elevated about 200(1/m2·h) compared with colloidal sol coated membrane at point of five minutes from starting test. 相似文献
83.
Nickel-rich β-NiAl alloys, which are potential materials for high-temperature shape-memory alloys, show a thermoelastic martensitic transformation,
which produces their shape memory effect. However, the transformation to Ni5Al3 phase during heating of NiAl martensite can interrupt the reversible martensitic transformation; consequently, the shape
memory effect in NiAl martensite might not appear after heating. The phase transformation process in binary Ni-(34 to 37)Al
martensite was investigated by differential thermal analysis (DTA) method, and we found that the condition of reversible martensitic
transformation was not the β → Ni5Al3 transformation, but rather the M → Ni5Al3 transformation occurring at 250 °C to 300 °C. Therefore, the transformation temperature of M → Ni5Al3 determined the highest operating temperature for the shape memory effect. For verifying the critical temperature, the phase
transformation process was investigated for eight ternary Ni-33Al-X alloys (X=Cu, Co, Fe, Mn, Cr, Ti, Si, and Nb). Only Ti,
Si, and Nb additions were found to be effective in dropping the M
s temperature, and they facilitated the shape memory effect in Ni-33Al-X alloys. In particular, the addition of Si and Nb raised
the transformation temperature of M → Ni5Al3, a potentially beneficial effect for shape memory at higher temperatures.
This article is based on a presentation made in the symposium entitled “Fundamentals of Structural Intermetallics,” presented
at the 2002 TMS Annual Meeting, February 21–27, 2002, in Seattle, Washington, under the auspices of the ASM and TMS Joint
Committee on Mechanical Behavior of Materials. 相似文献
84.
J.-G. Kim W.-P. Tai Y.-J. Kwon K.-J. Lee W.-S. Cho N.-H. Cho C.M. Whang Y.-C. Yoo 《Journal of Materials Science: Materials in Electronics》2004,15(12):807-811
Donor doped BaTiO3 (n-BaTiO3) ceramics were fabricated by adding polyethylene glycol (PEG) at 20 wt %. The effects of reducing and oxidizing atmospheres on the PTCR characteristics of the porous n-BaTiO3 ceramics were investigated. The PTCR characteristics of the porous n-BaTiO3 ceramics is strongly affected by chemisorbed oxygen at the grain boundaries and are recovered as the atmosphere is changed from the reducing gas to oxidizing gas. The low room-temperature resistivity of the porous n-BaTiO3 ceramics in reducing atmospheres may be caused by the decrease in potential barrier height, which originates from an increase in the number of electrons owing to the desorption of chemisorbed oxygen atoms at the grain boundaries. In addition, the high room-temperature resistivity of the porous n-BaTiO3 ceramics in oxidizing atmospheres may be caused by the increase in potential barrier height, which results from the adsorption of chemisorbed oxygen atoms at the grain boundaries. 相似文献
85.
This paper proposes a new LDMOSFET structure with a trenched sinker for high‐power RF amplifiers. Using a low‐temperature, deep‐trench technology, we succeeded in drastically shrinking the sinker area to one‐third the size of the conventional diffusion‐type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power‐added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below ?40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling. 相似文献
86.
Hordon Kim 《电子与电脑》2006,(5):107
发光聚合物P-OLED开发领导厂商并将P-OLED广泛应用在电子显示器产品上的剑桥显示技术公司(CDT),是一家于1992年在英国成立,以发展、制造并销售P-OLED材料与IP给显示器产业的公司。P-OLED隶属于有机发光二极管的一部份,是一种质地薄、重量轻且具功率效益的组件,当电流流过时就会发光。相较于其它平面显示器技术,如液晶显示器,它们提供更为强化的视觉体验与卓越的效能特性。在技术方面,2005年计有9家获授权公司给付权利金,授权金额总计达到420万美元。这些授权的客户包括Epson在内,Epson最近才发表一项使用OLED做为高亮度的光源,… 相似文献
87.
Jae-Duk Lee Jeong-Hyuk Choi Donggun Park Kinam Kim 《Electron Device Letters, IEEE》2003,24(12):748-750
In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells. 相似文献
88.
U. H. Pi D. H. Kim Z. G. Khim U. Kaiser M. Liebmann A. Schwarz R. Wiesendanger 《Journal of Low Temperature Physics》2003,131(5-6):993-1002
We have studied vortex dynamics in Bi2Sr2CaCu2O8 single crystal with low density columnar defects by using a magnetic force microscope. Single crystal Bi2Sr2CaCu2O8 sample was irradiated by 1.3 GeV uranium ion to form artificial pinning centers along the crystalline c-axis. The irradiation dose corresponded to a matching field of 20 gauss. The radius of an individual vortex is approximately 140 nm, which is close to the penetration depth of this material. Magnetic force microscope (MFM) images show that intrinsic crystalline defects such as stacking fault dislocations are very effective pinning centers for vortices in addition to the pinning centers due to ion bombardment. By counting the number of vortex, we found that the flux trapped at each pinning center is a single flux quantum. At higher magnetic field, the vortex structure showed an Abrikosov lattice disturbed only by immobile vortices located at pinning centers. When increasing or decreasing the external magnetic field, the spatial distribution of vortices showed a Bean model like behavior. 相似文献
89.
This study explored strengths and limitations of table formatting choices by engaging twenty-eight participants in information searches in online tables, presented on a small-screen interface (Palm IIIc). Table length across conditions was held constant at three screens long (24 rows total) but varied from one to three screens wide (approximately 35, 70, and 105 characters per line). Target information was positioned in either the upper left, lower left, upper right, or lower right quadrants. Data collected were time on task, error rate, and level of participants' confidence in their answers. Experimenters found that increased horizontal scrolling imposed the heaviest burden on information search. This study supports restricting table widths to one screen on handheld computers. If necessary, however, tables can go to two screens wide without critical detriment to usability. While ruled line formatting is slightly better than interface character in providing visual support for the burden of horizontal scrolling, neither formatting option adequately compensates for the added burden. 相似文献
90.
Kerber A. Cartier E. Pantisano L. Degraeve R. Kauerauf T. Kim Y. Hou A. Groeseneken G. Maes H.E. Schwalke U. 《Electron Device Letters, IEEE》2003,24(2):87-89
The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling. 相似文献