Nano Molecular‐Platform: A Protocol to Write Energy Transmission Program Inside a Molecule for Bio‐Inspired Supramolecular Engineering

In a coded self‐assembly, a simple code is written in the molecule, which self‐assembles the molecules into a fractal like structure, which acts as a seed for the next step. As the molecule turns into a complex seed, the code transforms into another form and several seeds self‐assemble into another structure, which acts as a seed for the next step. Until now, this technology was considered as a prerogative of nature. Here, a dendritic network is used to write a basic code by synthetically attaching 32 molecular rotors and doping two controller molecules in its cavity. The code live, which is an energy transmission path in the molecule, is imaged. When the energy transmission path or code is triggered, a series of products generate one after another spontaneously. Two examples are: i) dendritic seed (5–6 nm)→paired nanowire (≈12 nm)→nanowire (≈200 nm)→microwire (500 nm)→wire like rod (1–2 μm)→jelly→rectangular sheet (5 μm). ii) dendritic seed→nano‐sphere (20 nm)→micro‐sphere (500 nm)→large balls(1 μm)→oval shape rod (5–10 μm)→Y, L or T shaped rod assembly. The energy level interactions are tracked using spectroscopy how exactly a directed energy transfer code generates multi‐step synthesis from nano to the visible scale.     

An asymmetric Y-branching circuit using total reflectionfor semiconductor integrated optical circuits

A new structure for a compact optical branching circuit is proposed. An asymmetric Y-branching circuit using total reflection is fabricated on an AlGaAs/GaAs wafer. Good branching operation is observed in a single-mode branching circuit with a branching angle of 45°. The exact origins of loss in the branching circuit are also clarified     

Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy

Defects and stress gradually accumulate throughout various Si large-scale integration fabrication processes. It is essential to monitor defects and stress carefully to suppress their unintentional introduction. In this study, we measured the stress and crystal quality in shallow trench isolation (STI) samples by ultraviolet (UV)-Raman spectroscopy with an extremely high-resolution wavenumber to evaluate the effect of post-annealing on the recovery of Si crystals. The variations of crystal quality in 200-mm wafers with STI structures gradually decreased after post-annealing for 4 h, 6 h, and 8 h; however, there was no substantial difference in the values of full-width at half-maximum of the Raman spectra. Precise measurements of variations of stress and crystal quality were successfully performed by UV-Raman spectroscopy with a high-resolution wavenumber, which enabled us to evaluate the STI process accurately.     

Synthesis of Nanohole‐Structured Single‐Crystalline Platinum Nanosheets Using Surfactant‐Liquid‐Crystals and their Electrochemical Characterization

Nanohole‐structured single‐crystalline Pt nanosheets have been synthesized by the borohydride reduction of Na₂PtCl₆ confined to the lyotropic liquid crystals (LLCs) of polyoxyethylene (20) sorbitan monooleate (Tween 80) with or without nonaethylene‐glycol (C₁₂EO₉). The Pt nanosheets of around 4–10 nm in central thickness and up to 500 nm or above in diameter have a number of hexagonal‐shaped nanoholes ∼1.8 nm wide. High‐resolution electron microscope images of the nanosheets showed atomic fringes with a spacing of 0.22 nm indicating that the nanosheets are crystallographically continuous through the nanoholed and non‐holed areas. The inner‐angle distributions for the hexagonal nanoholes indicate that the six sides of the nanoholes are walled with each two Pt (111), Pt (1 1) and Pt (010) planes. The formation mechanism of nanoholed Pt nanosheets is discussed on the basis of structural and compositional data for the resulting solids and their precursory LLCs, with the aid of similar nanohole growth observed for a Tween 80 free but oleic acid‐incorporated system. It is also demonstrated that the nanoholed Pt nanostructures loaded on carbon exhibit fairly high electrocatalytic activity for oxygen reduction reaction and a high performance as a cathode material for polymer‐electrolyte fuel cells, along with their extremely high thermostability revealed through the effect of electron‐irradiation.     

1-V 100-MHz embedded SRAM techniques for battery-operatedMTCMOS/SIMOX ASICs

Multithreshold-voltage CMOS (MTCMOS) has a great advantage of lowering physical threshold voltages without increasing the power dissipation due to large subthreshold leakage currents. This paper presents the embedded SRAM techniques for high-speed low-power MTCMOS/SIMOX application-specified integrated circuits (ASICs) that are operated with a single battery cell of around 1 V. In order to increase SRAM operating frequency, a pseudo-two stage pipeline architecture is proposed. The address decoder using a pass-transistor-type NAND gate and a segmented power switch presents a short clocked wordline selection time. The large bitline delay in read operations is greatly shortened with a new memory cell using extra low-V_th nMOSs. The small readout signal from memory cells is detected with a high-speed MTCMOS sense amplifier, in which a pMOS bitline selector is merged. The wasted power dissipation in writing data is reduced to zero with a self-timed writing action. A 8 K-words×16-bits SRAM test chip, fabricated with a 0.35-μm MTCMOS/SIMOX process (shortened effective channel length of 0.17 μm is available), has demonstrated a 100-MHz operation under the worst power-supply condition of 1 V. At a typical 1.2 V, the power dissipation during the standby time is 0.2-μW and that of a 100-MHz operation with a checkerboard test pattern is 14 mW for single fan-in loads     

Wideband and high-power compressively strained GaInAsP/InPmultiple-quantum-well ridge waveguide lasers emitting at 1.3 μm

Compressively strained 1.3-μm GaInAsP/InP multiple-quantum-well (MQW) ridge waveguide lasers were fabricated. Through optimizing the total well thickness, large bandwidth over 11 GHz was achieved, together with high quantum efficiency of about 0.48 W/A and high power output of 60 mW before rollover. The laser also showed less temperature sensitivity up to an elevated temperature of 85°C     

Small turn-on delay time in 1.3 μm InAsP/InP strained doublequantum-well lasers with very-low threshold current

It is demonstrated for the first time that compressively strained InAsP/InP double quantum-well (DQW) lasers emitting at 1.3 μm performed a very small turn-on delay time by a significant reduction in threshold current. Lasers with 200 μm cavity length and high reflection coating achieved both very low threshold current of 1.8 mA and a small turn-on delay time (200 ps) even under a bias-less 30 mA pulse current. An additional power penalty was simulated, and it was shown that these small-delay and low-threshold performances are suitable for high-speed optical parallel data transmitters in computer networks     

Neuron MOS binary-logic integrated circuits. I. Design fundamentalsand soft-hardware-logic circuit implementation

Described are the fundamental design principles for binary-logic circuits using a highly functional device called the neuron MOS transistor (νMOS), a single MOS transistor simulating the function of biological neurons. To facilitate logic design employing this transistor, a graphical technique called the floating-gate potential diagram has been developed. It is shown that any Boolean functions can be generated using a common circuit configuration of two-stage νMOS inverters. One of the most striking features of νMOS binary-logic application is the realization of a so-called soft hardware logic circuit. The circuit can be made to represent any logic function (AND, OR, NAND, NOR, exclusive-NOR, exclusive-OR, etc.) by adjusting external control signals without any modifications in its hardware configuration. The circuit allows real-time reconfigurable systems to be built. Test circuits were fabricated by a double-polysilicon CMOS process and their operation was experimentally verified     

Steam absorption process of water/LiBr system inside vertical small bore pipes

In a previous paper, a numerical model for absorption within vertical pipes was proposed and compared with the experiments. Agreements were good for pipes with an OD 28–15 mm but at 10 mm pipe experiments fell below the predicted values. For smaller diameters, the difference between the surface area of the falling liquid film and that of the outer surface of the pipe is not negligible and the thickness of the liquid film is also not negligible. In this paper a new model is formulated in cylindrical coordinates and experiments using pipes with 9.52 mm and 7 mm OD are done. Smooth pipes and two kinds of internally finned pipes, originally developed and used to enhance the heat transfer characteristics of the evaporator and condenser of a refrigerator using HFC as refrigerant, are tested in the experiments. The absorption performance is enhanced by 30% when compared to the smooth pipes, but the difference between the finned pipes is small. © 2004 Wiley Periodicals, Inc. Heat Trans Asian Res, 34(1): 18–28, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/htj.20040