Fabrication of polymeric large-core waveguides for opticalinterconnects using a rubber molding process

Polymeric large-core (47 μm×41 μm) optical waveguides for optical interconnects have been fabricated by using a rubber molding process. For low-cost low-loss large-core waveguides, our newly developed thick-photoresist patterning process is used for a master fabrication. Also a low-loss thermocurable polymer, perfluorocyclobutane (PFCB), is used in fabricating optical waveguides by rubber molding for the first time. The propagation loss is measured to be 0.4 dB/cm at the wavelength of 1.3 μm, and 0.7 dB/cm at the wavelength of 1.55 μm     

Restorable Type Conversion of Carbon Nanotube Transistor Using Pyrolytically Controlled Antioxidizing Photosynthesis Coenzyme

Here, a pyrolytically controlled antioxidizing photosynthesis coenzyme, β‐Nicotinamide adenine dinucleotide, reduced dipotassium salt (NADH) for a stable n‐type dopant for carbon nanotube (CNT) transistors is proposed. A strong electron transfer from NADH, mainly nicotinamide, to CNTs takes place during pyrolysis so that not only the type conversion from p‐type to n‐type is realized with 100% of reproducibility but also the on/off ratio of the transistor is significantly improved by increasing on‐current and/or decreasing off‐current. The device was stable up to a few months with negligible current changes under ambient conditions. The n‐type characteristics were completely recovered to an initial doping level after reheat treatment of the device.     

Construction of block orthogonal golay sequences and application to channel estimation of mimo-ofdm systems

In this paper, we construct a family of block orthogonal Golay sequences that have low peak-to-mean envelope power ratio (PMEPR) as well as block wise orthogonal properties. We then present an application of the sequences to channel estimation of multiple-input multiple-output orthogonal frequency division multiplexing (MIMO-OFDM) systems. We compare the performance of the proposed algorithm with that of a frequency division multiplexing (FDM) piloting algorithm, and investigate the effect of co-channel interference (CCI) on the channel estimation performance.     

An Interactive Design Environment for C-Based High-Level Synthesis of RTL Processors

Much effort in register transfer level (RTL) design has been devoted to developing "push-button" types of tools. However, given the highly complex nature, and lack of control on RTL design, push-button type synthesis is not accepted by many designers. Interactive design with assistance of algorithms and tools can be more effective if it provides control to the steps of synthesis. In this paper, we propose an interactive RTL design environment which enables designers to control the design steps and to integrate hardware components into a system. Our design environment is targeting a generic RTL processor architecture and supporting pipelining, multicycling, and chaining. Tasks in the RTL design process include clock definition, component allocation, scheduling, binding, and validation. In our interactive environment, the user can control the design process at every stage, observe the effects of design decisions, and manually override synthesis decisions at will. We present a set of experimental results that demonstrate the benefits of our approach. Our combination of automated tools and interactive control by the designer results in quickly generated RTL designs with better performance than fully-automatic results, comparable to fully manually optimized designs.     

CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-/spl mu/m VCSELs grown by MOCVD

We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-/spl mu/m vertical-cavity surface-emitting laser operating continuous wave up to 35/spl deg/C. The structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In/sub 0.4/Al/sub 0.6/As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.     

Microgenerator Using BiSbTe-Pt Thermopile and Pt-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> Ceramic Combustor

The performance of a microcombustor thermoelectric generator device based on a thermopile using p-type Bi_0.3Sb_1.7Te₃ (BST) and n-type Pt films has been investigated. The BST films were prepared by two different methods—pulsed laser deposition (PLD) and sputter deposition—on Si₃N₄/SiO₂ multilayers on Si substrate. The ceramic catalyst combustor was patterned on the thermopile end on a thin membrane fabricated by back-side bulk etching of the silicon substrate. At 138°C the thermoelectric power factors of the PLD and sputter-deposited films were 3.6 × 10⁻³ W/mK² and 0.22 × 10⁻³ W/mK², respectively. The power from the generator with the sputter-deposited film was 0.343 μW, which was superior to that of the device with the PLD film, which provided 0.1 μW, for combustion of a 200 sccm flow of 3 v/v% hydrogen in air.     

Modular Layer‐by‐Layer Assembly of Polyelectrolytes,Nanoparticles, and Molecular Catalysts into Solar‐to‐Chemical Energy Conversion Devices

The design and fabrication of solar‐to‐chemical energy conversion devices are enabled through interweaving multiple components with various morphologies and unique functions using a versatile layer‐by‐layer assembly method. Cationic and anionic polyelectrolytes are used as an electrostatic adhesive to assemble the following functional materials: plasmonic Ag nanoparticles for improved light harvesting, upconversion nanoparticles for utilization of near‐infrared light, and polyoxometalate water oxidation catalysts for enhanced catalytic activity. Polyelectrolytes also have an additional function of passivating the surface recombination centers of the underlying photoelectrode. These functional components are precisely assembled on a model photoanode (e.g., Fe₂O₃ and BiVO₄) in a desired order and various combinations without degradation of their intrinsic properties. As a result, the performance of water oxidation photoanodes is synergistically enhanced. This study can enable the design and fabrication of novel solar‐to‐chemical energy conversion devices.     

Improved HBT linearity with a "post-distortion"-type collector linearizer

An HBT amplifier with a "post-distortion"-type linearizer utilizing a base-collector junction diode shows more than 8-dB improvement of adjacent channel power ratio, and the collector linearizer comprising a reverse biased base-collector junction diode requires no additional dc power consumption and has no deterioration of RF performance. The linearization technique of post-distortion compensates the nonlinearity of HBTs, which arises from the C/sub bc/ variation due to a large-signal swing.     

Ultra-low temperature sensitive deep-well quantum cascade lasers (λ - 4.8 μm) via uptapering conduction band edge of injector region

A new design feature for deep-well quantum cascade (QC) lasers, in which the conduction band edge of the injector region is uptapered, results in virtual suppression of carrier leakage out of the active regions of 4.8 mm emitting devices. For heatsink temperatures in the 20?90°C range the characteristic temperature coefficients for threshold, T₀, and slope efficiency, T₁, reach values as high as 278 and 285 K, respectively, which are nearly twice the values for conventional QC lasers. At 20°C, the threshold current density for uncoated, 30 period, 3 mm-long devices is only ~1.8 kA/cm².     

Improvement of the cell performance in the ZnS/Cu(In,Ga)Se2 solar cells by the sputter deposition of a bilayer ZnO : Al film

ZnS is a candidate to replace CdS as the buffer layer in Cu(In,Ga)Se₂ (CIGS) solar cells for Cd‐free commercial product. However, the resistance of ZnS is too large, and the photoconductivity is too small. Therefore, the thickness of the ZnS should be as thin as possible. However, a CIGS solar cell with a very thin ZnS buffer layer is vulnerable to the sputtering power of the ZnO : Al window layer deposition because of plasma damage. To improve the efficiency of CIGS solar cells with a chemical‐bath‐deposited ZnS buffer layer, the effect of the plasma damage by the sputter deposition of the ZnO : Al window layer should be understood. We have found that the efficiency of a CIGS solar cell consistently decreases with an increase in the sputtering power for the ZnO : Al window layer deposition onto the ZnS buffer layer because of plasma damage. To protect the ZnS/CIGS interface, a bilayer ZnO : Al film was developed. It consists of a 50‐nm‐thick ZnO : Al plasma protection layer deposited at a sputtering power of 50 W and a 100‐nm‐thick ZnO : Al conducting layer deposited at a sputtering power of 200 W. The introduction of a 50‐nm‐thick ZnO : Al layer deposited at 50 W prevented plasma damage by sputtering, resulting in a high open‐circuit voltage, a large fill factor, and shunt resistance. The ZnS/CIGS solar cell with the bilayer ZnO : Al film yielded a cell efficiency of 14.68%. Therefore, the application of bilayer ZnO : Al film to the window layer is suitable for CIGS solar cells with a ZnS buffer layer. Copyright © 2012 John Wiley & Sons, Ltd.