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101.
Nickel-rich β-NiAl alloys, which are potential materials for high-temperature shape-memory alloys, show a thermoelastic martensitic transformation,
which produces their shape memory effect. However, the transformation to Ni5Al3 phase during heating of NiAl martensite can interrupt the reversible martensitic transformation; consequently, the shape
memory effect in NiAl martensite might not appear after heating. The phase transformation process in binary Ni-(34 to 37)Al
martensite was investigated by differential thermal analysis (DTA) method, and we found that the condition of reversible martensitic
transformation was not the β → Ni5Al3 transformation, but rather the M → Ni5Al3 transformation occurring at 250 °C to 300 °C. Therefore, the transformation temperature of M → Ni5Al3 determined the highest operating temperature for the shape memory effect. For verifying the critical temperature, the phase
transformation process was investigated for eight ternary Ni-33Al-X alloys (X=Cu, Co, Fe, Mn, Cr, Ti, Si, and Nb). Only Ti,
Si, and Nb additions were found to be effective in dropping the M
s temperature, and they facilitated the shape memory effect in Ni-33Al-X alloys. In particular, the addition of Si and Nb raised
the transformation temperature of M → Ni5Al3, a potentially beneficial effect for shape memory at higher temperatures.
This article is based on a presentation made in the symposium entitled “Fundamentals of Structural Intermetallics,” presented
at the 2002 TMS Annual Meeting, February 21–27, 2002, in Seattle, Washington, under the auspices of the ASM and TMS Joint
Committee on Mechanical Behavior of Materials. 相似文献
102.
Kim S. Wang Y. E. 《IEEE transactions on circuits and systems. I, Regular papers》2006,53(12):2521-2528
Transient characteristics of switched resonators have been studied. The resonators exhibit controllable impedance and energy storage behaviors during an alternating charging and discharging process. It is discovered that these unique characteristics of switched resonators can lead to novel RF envelope signal processing functions. The paper discusses the basic theory of switched resonators and the designing methodology of relevant RF signal processing applications. Two applications are presented as examples. The first example is a variable, reflective attenuator which uses the controllable impedance of the switched resonators to achieve different attenuation/reflection levels. In the second example, a simple, compact and efficient RF pulse compression technique based on the switched resonator concept is introduced. It utilizes the charging/discharging characteristics of the circuit resonator by varying the resonator's Q-factor. The approach compresses the duration of the modulated pulse without changing the phase characteristics of the RF carrier. The pulse compression technique can also be implemented with other type of resonators including distributed resonators, as demonstrated through the experiments 相似文献
103.
J.-G. Kim W.-P. Tai Y.-J. Kwon K.-J. Lee W.-S. Cho N.-H. Cho C.M. Whang Y.-C. Yoo 《Journal of Materials Science: Materials in Electronics》2004,15(12):807-811
Donor doped BaTiO3 (n-BaTiO3) ceramics were fabricated by adding polyethylene glycol (PEG) at 20 wt %. The effects of reducing and oxidizing atmospheres on the PTCR characteristics of the porous n-BaTiO3 ceramics were investigated. The PTCR characteristics of the porous n-BaTiO3 ceramics is strongly affected by chemisorbed oxygen at the grain boundaries and are recovered as the atmosphere is changed from the reducing gas to oxidizing gas. The low room-temperature resistivity of the porous n-BaTiO3 ceramics in reducing atmospheres may be caused by the decrease in potential barrier height, which originates from an increase in the number of electrons owing to the desorption of chemisorbed oxygen atoms at the grain boundaries. In addition, the high room-temperature resistivity of the porous n-BaTiO3 ceramics in oxidizing atmospheres may be caused by the increase in potential barrier height, which results from the adsorption of chemisorbed oxygen atoms at the grain boundaries. 相似文献
104.
铁电纳米粒子悬浮在向列相液晶母体中,增强介电各向异性,而且对施加的电场信号敏感。本文也展示了纳米粒子对所述复合材料可实现的总的相变的作用。这种方法也许可应用于设计新型显示材料。 相似文献
105.
Takuma Suzuki Hang-Ju Ko Agus Setiawan Jung-Jin Kim Koh Saitoh Masami Terauchi Takafumi Yao 《Materials Science in Semiconductor Processing》2003,6(5-6):519-521
We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH3 is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH3 pre-exposure helps form a Zn3N2 layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar. 相似文献
106.
This paper proposes a new LDMOSFET structure with a trenched sinker for high‐power RF amplifiers. Using a low‐temperature, deep‐trench technology, we succeeded in drastically shrinking the sinker area to one‐third the size of the conventional diffusion‐type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power‐added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below ?40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling. 相似文献
107.
Hordon Kim 《电子与电脑》2006,(5):107
发光聚合物P-OLED开发领导厂商并将P-OLED广泛应用在电子显示器产品上的剑桥显示技术公司(CDT),是一家于1992年在英国成立,以发展、制造并销售P-OLED材料与IP给显示器产业的公司。P-OLED隶属于有机发光二极管的一部份,是一种质地薄、重量轻且具功率效益的组件,当电流流过时就会发光。相较于其它平面显示器技术,如液晶显示器,它们提供更为强化的视觉体验与卓越的效能特性。在技术方面,2005年计有9家获授权公司给付权利金,授权金额总计达到420万美元。这些授权的客户包括Epson在内,Epson最近才发表一项使用OLED做为高亮度的光源,… 相似文献
108.
Jae-Duk Lee Jeong-Hyuk Choi Donggun Park Kinam Kim 《Electron Device Letters, IEEE》2003,24(12):748-750
In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells. 相似文献
109.
Munhyoung Cho Chong Hyun Lee Soohong Kim Joohwan Chun 《AEUE-International Journal of Electronics and Communications》2004,58(4):299-301
In this paper, we propose a new robust code division multiple access (CDMA) receiver of which weight vector is obtained by projecting the effective spatio-temporal signature waveform onto the signal subspace of the data covariance matrix. We verified our proposed algorithm by the field measured data obtained with a custom-built wideband CDMA test-bed. It will be shown that the proposed algorithm is robust to the signal mismatch. 相似文献
110.
U. H. Pi D. H. Kim Z. G. Khim U. Kaiser M. Liebmann A. Schwarz R. Wiesendanger 《Journal of Low Temperature Physics》2003,131(5-6):993-1002
We have studied vortex dynamics in Bi2Sr2CaCu2O8 single crystal with low density columnar defects by using a magnetic force microscope. Single crystal Bi2Sr2CaCu2O8 sample was irradiated by 1.3 GeV uranium ion to form artificial pinning centers along the crystalline c-axis. The irradiation dose corresponded to a matching field of 20 gauss. The radius of an individual vortex is approximately 140 nm, which is close to the penetration depth of this material. Magnetic force microscope (MFM) images show that intrinsic crystalline defects such as stacking fault dislocations are very effective pinning centers for vortices in addition to the pinning centers due to ion bombardment. By counting the number of vortex, we found that the flux trapped at each pinning center is a single flux quantum. At higher magnetic field, the vortex structure showed an Abrikosov lattice disturbed only by immobile vortices located at pinning centers. When increasing or decreasing the external magnetic field, the spatial distribution of vortices showed a Bean model like behavior. 相似文献