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101.
The X-ray scattering intensity curves for vitreous As2S3 are experimentally measured using soft (copper) and hard (molybdenum) X rays. The inclusion of all the specific features revealed in the experimental scattering intensity curves makes it possible to obtain the experimental atomic radial distribution function (ARDF) in the ordering range up to ~1 nm. The experimental ARDF is interpreted in the framework of the fragmentary model. A comparison of the experimental ARDF with the model ARDF calculated from the crystal structure data obtained for orpiment demonstrates that the corrugated layers inherent in crystalline As2S3 are retained in the glass structure but the characteristic interlayer interatomic distances are absent. The layers are joined together through the As4S5 molecular clusters. Microcrystals consisting of several unit cells are absent in the glass structure, which involves only the structural fragments of both crystalline analogs. One of the possible variants of their joining is proposed. 相似文献
102.
Programs are presented for calculating dusty air flow in ventilation systems, which have been derived from the method of singular
integral equations. They allow one to construct flow lines and determine the velocity pattern for the air in a closed rectangular
region with outlet, flow, and extraction holes; a study is made on the dust particle behavior in the aerodynamic field in
which there may be a rotating cylinder or pumping cylinder; determinations are made of the concentration and grain-size composition
of the dust in the extraction hole; one can construct flow lines and single-particle paths in multicoupled regions of potential
flows containing any number of rotating cylinders and cylinder pumps.
Translated from Novye Ogneupory, No. 5, pp. 53–58, May, 2008. 相似文献
103.
104.
A technique is proposed for introducing microdoses (10?5–10?10 g) of germanium and indium metals into semiconductor compounds by coulometric titration in a solid electrolyte cell. The solid electrolytes that are reversible with respect to germanium cations (the GeSe-GeI2 system containing 5 mol % GeI2) and indium cations (the InCl3-MgCl2 system containing 15 mol % MgCl2, the InCl3-CdCl2 system containing 1.5 mol % CdCl2, and the In2S3-InCl3 system containing 5 mol % InCl3) are chosen, and their electric transport properties are characterized. The optimum conditions for electrochemical doping (temperature, current density), under which the current efficiency reaches 90–100%, are determined. The doping with germanium and indium is performed for nonstoichiometric compounds, such as lead monotelluride, indium sulfide, and ternary chalcogenide spinel Cd1 ± δCr2Se4. The doping efficiency is controlled by measuring the electromotive force of the corresponding electrochemical cells and the Hall effect, as well as using the electrical conductivity method. The solid electrolytes that are reversible with respect to indium are used to determine the standard Gibbs energies of formation of a number of indium-containing semiconductors. 相似文献
105.
Tsang T.K.K. Kuan-Yu Lin El-Gamal M.N. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2008,55(3):214-218
This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology. 相似文献
106.
A theory describing the optical orientation and Hanle effect for holes in quantum wells or quantum dots based on cubic semiconductors is developed. It is demonstrated that the presence of internal or external strain in quantum-confinement heterostructures leads to the dependence of the Hanle effect on the orientation of the magnetic field with respect to the heterostructure growth axis. 相似文献
107.
N. N. Zalogin A. V. Sknarya 《Journal of Communications Technology and Electronics》2008,53(10):1233-1239
The problems related to digitization of sonar compound analog sounding signals reflected from a target are considered. With the use of mathematical simulation, it is shown that, in the case of the most efficient Kotel’nikov digitization, errors occur that impede correct correlation signal processing. This difficulty can be overcome via a reduction of the sampling interval by a factor of 2 to 4 relative to the interval proposed by Kotel’nikov. 相似文献
108.
V. N. Jmerik A. M. Mizerov T. V. Shubina A. V. Sakharov A. A. Sitnikova P. S. Kop’ev S. V. Ivanov E. V. Lutsenko A. V. Danilchyk N. V. Rzheutskii G. P. Yablonskii 《Semiconductors》2008,42(12):1420-1426
Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells. Structural and optical properties of the Al x Ga1 ? x N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al2O3 substrates, heterostructures for light-emitting diodes with Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm. 相似文献
109.
This paper presents the mass transfer results from an impinging liquid jet to a rotating disk. The mass transfer coefficients were measured using the electrochemical limiting diffusion current technique (ELDCT). Rotational Reynolds number (Rer) in the range of 3.4 × 104–1.2 × 105, jet Reynolds number (Rej) 1.7 × 104–5.3 × 104 and non-dimensional jet-to-disk spacing (H/d) 2–8 were taken into consideration as parameters. It was found that the jet impingement resulted in a substantial enhancement in the mass transfer compared to the case of the rotating disk without jet. 相似文献
110.
The redistribution of components in the crystal layer-melt system at the main stages of fractional crystallization on cooled walls is studied. Mathematical solutions that can be used for calculating the fraction of trapped melt and the value of effective distribution (partition) coefficient in the crystallization of systems of different types are obtained. The kinetics of diffusion of impurities and migration of liquid inclusions under the action of temperature gradients at the growth and diffusion-washing stages of a two-phase crystal layer is studied. Simple relations for calculating the holdup of a melt and the maximal degree to which the main component can be purified in the partial melting (sweating) of crystal layers are derived. The theoretical results are compared with the experimental data obtained in the fractional crystallization of organic mixtures and freezing of aqueous solutions. Comparative analysis of the efficiency of the studied stages of fractional crystallization is accomplished and some practical recommendations are formulated. 相似文献