High pass filter with above IC integrated SrTiO3 high K MIM capacitors

This paper describes realization and characterization of SrTiO₃ (STO) high K MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors in order to realize a high pass filter. Surface capacitance achieved is 10 nF/mm² with capacitance value of 1.2 nF. The process for STO MIM fabrication does not exceed 400 °C, which is compatible with interconnections. Typical K and dielectric losses values obtained are, respectively 110% and 2%. Yield obtained reaches 83% for capacitors. A functional high pass filter using these STO capacitors was realized in this study. It exhibits a cut-off frequency at 6.5 kHz and a constant gain at higher frequencies of −1.3 dB.     

Toward two-dimensional self-organization of nanostructures using wafer bonding and nanopatterned silicon surfaces

The structure of ultrathin silicon layers obtained by molecular hydrophobic bonding is investigated. The twist and tilt angles between the two crystals are accurately controlled. The buried Si|Si interface is observed by transmission electron microscopy and by grazing incidence X-ray techniques. For low twist angle values (/spl psi/<5/spl deg/) plane view observations reveal well-defined dislocation networks. Cross-section observations give evidence that the dislocation networks are localized at the bonding interfacial plane with no threading dislocation. Grazing incidence small angle X-ray scattering measurements confirm the good quality of the bonding interface as well as the quality of the dislocation networks. Grazing incidence X-ray diffraction is also used and shows the long-range order of the periodic strain field in the silicon layer. It shows, especially, the interaction between the dislocations. X-ray reflectivity was employed and estimated that the interfacial thickness (i.e., thickness of the bonding) lower than 1 nm decreases when the twist angle increases. The nanopatterned surface is then investigated by scanning tunneling microscopy and X-ray methods. To validate these substrates for long-range order self-organization, the growth of Si and Ge quantum dots is finally achieved.     

Twitter information for contributing to the strategic digital city: Towards citizens as co-managers

Actions towards an effective city management require a focus on citizens, and it is a role of local governments to search for ways to provide their participation in the decision-making process. Among other information technology resources, local governments use social platforms thus facing the challenge of extracting and classifying information for strategic use. The objective of this study is to analyze Twitter information to contribute to the strategic digital city. The research methodology used was a case study of a Brazilian city. Twitter was analyzed, and the information assessed according to its characteristics, source, nature, quality, intelligence and organizational level. Results reveal Twitter allows communication, rudiments of public services and exchange and sharing information on municipal themes inherent to strategic digital cities. Information has quality and intelligence to serve the strategic level of government. The conclusion confirms that Twitter enhances transparency and strengthens bonds between local government and citizens.     

Synthesis,size-dependent optoelectronic and charge transport properties of thieno(bis)imide end-substituted molecular semiconductors

The synthesis of two new thieno(bis)imide (TBI, N) end functionalized oligothiophene semiconductors is reported. In particular, trimer (NT3N) and pentamer (NT5N) have been synthesized and characterized. Two different synthetic approaches for their preparation were tested and compared namely conventional Stille cross coupling and direct arylation reaction via C–H activation. Theoretical calculations, optical and electrochemical characterization allowed us to assess the role of the π-conjugation extent, i.e., of the oligomer size on the optoelectronic properties of these materials. In both TBI ended compounds, due to the strong localization of the LUMO orbital on the TBI unit, the LUMO energy is almost insensitive to the oligomer size, this being crucial for the fine-tailoring of the energy and the distribution of the frontier orbitals. Surprisingly, despite its short size and contrarily to comparable TBI-free analogues, NT3N shows electron charge transport with mobility up to μ_N = 10⁻⁴ cm² V⁻¹ s⁻¹, while increasing the oligomer size to NT5N promotes ambipolar behavior and electroluminescence properties with mobility up to μ_N = 0.14 cm² V⁻¹ s⁻¹ and to μ_P = 10⁻⁵ cm² V⁻¹ s⁻¹.     

Quantitative determination of Botrytis laccase in musts and wines by the syringaldazine test

The syringaldazine assay was adapted for quantitative determination of laccase (EC 1.10.3.2) activity from Botrytis cinerea Pers in musts and new wines. This colorimetric method is fast, specific and sensitive. It makes it possible to assess the level of contamination of crops by Botrytis cinerea. The assay can be performed in the presence of tyrosinase but the phenolic compounds of the grape must first be eliminated because of their inhibition of syringaldazine oxidation by laccase. When measured in botrytised grape, laccase activity is related to the stages of development of the fungus.     

Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

A new concept of nanoscale MOSFET, the Gate Modulated Resonant Tunneling Transistor (RT-FET), is presented and modeled using 3D Non-Equilibrium Green’s Function simulations enlightening the main physical mechanisms. Owing to the additional tunnel barriers and the related longitudinal confinement present in the device, the density of state is reduced in its off-state, while remaining comparable in its on-state, to that of a MOS transistor without barriers. The RT-FET thus features both a lower RT-limited off-current and a faster increase of the current with V_G, i.e. an improved slope characteristic, and hence an improved I_on/I_off ratio. Such improvement of the slope can happen in subthreshold regime, and therefore lead to subthreshold slope below the kT/q limit. In addition, faster increase of current and improved slope occur above threshold and lead to high thermionic on-current and significant I_on/I_off ratio improvement, even with threshold voltage below 0.2 V and supply voltage V_dd of a few hundreds of mV as critically needed for future technology nodes. Finally RT-FETs are intrinsically immune to source-drain tunneling and are therefore promising candidate for extending the roadmap below 10 nm.     

Lone‐Pair‐Induced Covalency as the Cause of Temperature‐ and Field‐Induced Instabilities in Bismuth Sodium Titanate

Bismuth sodium titanate (BNT)‐derived materials have seen a flurry of research interest in recent years because of the existence of extended strain under applied electric fields, surpassing that of lead zirconate titanate (PZT), the most commonly used piezoelectric. The underlying physical and chemical mechanisms responsible for such extraordinary strain levels in BNT are still poorly understood, as is the nature of the successive phase transitions. A comprehensive explanation is proposed here, combining the short‐range chemical and structural sensitivity of in situ Raman spectroscopy (under an applied electric field and temperature) with macroscopic electrical measurements. The results presented clarify the causes for the extended strain, as well as the peculiar temperature‐dependent properties encountered in this system. The underlying cause is determined to be mediated by the complex‐like bonding of the octahedra at the center of the perovskite: a loss of hybridization of the 6s² bismuth lone pair interacting with the oxygen p‐orbitals occurs, which triggers both the field‐induced phase transition and the loss of macroscopic ferroelectric order at the depolarization temperature.     

A 1.4GS/s 9-bit 45 dB power control RFDAC for digital radio transmitters

This paper presents a high speed, 9-bit RF Digital-to-Analog Converter based on a new architecture implemented in a 0.13 μm BiCMOS process and able to adjust the output power by 45 dB to meet gain control requirements of the new communications standards with a SFDR >25 dBc. The maximum test-demonstrated frequency is 1.4 GHz and the chip dissipates <25 mW.     

Plasmomechanical Systems: Principles and Applications

Extreme confinement of electromagnetic waves and mechanical displacement fields to nanometer dimensions through plasmonic nanostructures offers unprecedented opportunities for greatly enhanced interaction strength, increased bandwidth, lower power consumption, chip-scale fabrication, and efficient actuation of mechanical systems at the nanoscale. Conversely, coupling mechanical oscillators to plasmonic nanostructures introduces mechanical degrees of freedom to otherwise static plasmonic structures thus giving rise to the generation of extremely large resonance shifts even for minor position changes. This nanoscale marriage of plasmonics and mechanics has led to the emergence of a new field of study called plasmomechanics that explores the fundamental principles underneath the coupling between light and plasmomechanical nanoresonators. In this review, both the fundamental concepts and applications of plasmomechanics as an emerging field of study are discussed. After an overview of the basic principles of plasmomechanics, the active tuning mechanisms of plasmonic nano-mechanical systems are extensively analyzed. Moreover, the recent developments on the practical implications of plasmomechanic systems for such applications as biosensing and infrared detection are highlighted. Finally, an outlook on the implications of the plasmomechanical nanosystems for development of point-of-care diagnostic devices that can help early and rapid detection of fatal diseases are forwarded.