Influence of the intensity of gg irradiation on the photoluminescence of GaAs:Te

The influence of gg irradiation (⁶⁰Co) of various intensities (P _γ≈1.7−7.5kGR/h) on the photoluminescence of GaAs:Te single crystals [n ₀=(1.2–2.3×10¹⁸ cm⁻³] is investigated. Together with the known photoluminescence impurity bands (hν _max≈1.2 eV and/or hν _max≈1.35 eV) and edge band (hν _max≈1.51 eV), new bands are also observed in the spectra at hν _max≈1.3 eV and hν _max≈1.48 eV. The observed effects are attributed to radiation-stimulated ordering of the donor impurity and deep impurity centers. Fiz. Tekh. Poluprovodn. 32, 38–39 (January 1998)     

On the Yustova threshold plates

A response to criticism of threshold plates for the study of color vision developed at the Mendeleev All-Russia Research Institute of Metrology and published in 1994 is presented. The critics base their conclusions on colorimetric testing and the examination of the plates. In response to the article by M. V. Danilova and J. D. Mollon [4]. __________ Translated from Izmeritel’naya Tekhnika, No. 1, pp. 37–39, January, 2007.     

Production and properties of micro‐porous glas bubble zinc and aluminium composites

Micro‐porous syntactic foams were produced by means of integration of glass bubbles into aluminium and zinc matrices. Preforms of glass bubbles were pressure infiltrated with the alloys AlSi9Cu9 ans ZnAl4Cu using squeeze casting. The preforms were sintered thermically without the use of bonding agents. Using the combination of different sintering steps syntactic foams with locally different densities could be produced. The mechanical properties of the foams were tested indicating a high compression strength of the foams and a very good compression energy absorption. Furthermore, corrosion behaviour and behaviour at higher temperatures were investigated.     

A model for electroluminescence in SrS:Ce ACTFEL display devices

An analytical model for electroluminescence in SrS:Ce AC thin-film electroluminescent display devices is presented. The model incorporates an exact calculation of the electric field and the effect of activator ionization and bulk traps. Activator ionization is needed to explain several features of luminescence behavior in SrS:Ce devices. These features include the second luminescence peak at the trailing edge of the voltage pulse and the time lag between the luminescence and the applied voltage when the applied voltage consists of bipolar trapezoidal pulses and rectangular pulses of low voltage amplitudes. As a mechanism for the ionization of activators, field-assisted tunneling is shown to be more likely than impact ionization by hot electrons. Physical processes are described in terms of rate equations, and field, current, and luminescence waveforms are calculated for one set of device parameters. The calculated and experimental luminescence waveforms agree     

Extended fundamental frequency analysis of the LCC resonant converter

Fundamental frequency techniques are used to analyze the series-parallel resonant converter under heavy load conditions, both with a continuous, but distorted parallel capacitor voltage waveform, and with a discontinuous capacitor voltage waveform. The analysis is validated with results from an experimental prototype. The application of the technique to the parallel-loaded L-C resonant converter is also considered.     

Contemporary approaches to certification of measurement provision software

Contemporary approaches to the certification of measurement provision software are considered in domestic and overseas publications. Normative documentation is analyzed and a scheme is proposed for certification that takes account of the features of programs used for metrological purposes. __________ Translated from Izmeritel’naya Tekhnika, No. 5, pp. 65–68, May, 2007.     

Effect of Annealing in an Active Boron-Containing Medium on Surface Hardening of Nitrided Titanium

We studied the effect of the structural and phase state of surface layers of nitrided VT1-0 titanium on its surface hardening after additional saturation in an active boron-containing atmosphere (900°C, 5 h, 0.1 MPa Ar, a mixture of boron carbide and borax). Additional treatment almost doubles the surface microhardness of the specimens. Surface hardening is a result of both the formation of borides and carbides and the introduction of additional elements into the lattice of titanium nitrides. We established that the formation of a nonstoichiometric nitride with a deficiency of the nonmetallic component prior to additional treatment enables one to reach the maximum effect of surface hardening.