Microcalorimetry for characterization of film formation and cure of coatings and adhesives

A new microcalorimeter with eight parallel channels using robust, low cost sensors for characterization of coatings and adhesives is described and first experiments on coatings and adhesives are presented. The calorimetric sensors are based on thin glass plates (20 mm × 20 mm, thickness 150 μm) with heater and thermocouple sputtered on the surfaces (calorimetric active area of about 9 mm²). The setup allows heating and cooling experiments as well as isothermal measurements in the temperature-modulated mode with up to eight sensors in parallel. The measured quantities are the real (C^′_p) and imaginary part (C^″_p) of the complex heat capacity (), the related absolute value of the heat capacity () and the heat flow . An industrial computer (NI PXI system) with specific software for calibration and data recording controls the electronic components. Sensors can be embedded in a temperature controlled oven (heating and cooling by Peltier elements) or alternatively in a climatic cabinet with controlled temperature and humidity.

The method has been applied successfully to monitoring of film formation of aqueous polymer dispersions (styrene-acrylate copolymer) and curing of coatings.     

Atomic-scale STM experiments on semiconductor surfaces: towards molecular nanomachines

The electronic or quantum control of individual molecules with the scanning tunnelling microscope offers exciting perspectives on operating molecular nanomachines. This implies the use of semiconductor surfaces rather than metallic surfaces which would rapidly quench the electronic excitations. We review recent results illustrating the state of the art and the main problems which need to be solved: the choice, design and properties of functionalized organic molecules on semiconductor surfaces; the control of the inelastic electronic channels through a single molecule; and the search for well-controlled atomic-scale wide-band-gap semiconductor surfaces.     

Smart polyoxometalate-based nitrogen monoxide sensors

An electrochemical sensor design for selective NO detection is presented based on a polyoxometalate (POM) cluster immobilized on an electrode through a polyelectrolyte matrix. It is suggested that the POM can electrocatalyze the reduction of NO. The reduction current is proportional to the NO concentration in the investigated concentration window ranging from 1 nM to 10 microM. The sensitivity of the device can be adjusted by the number of immobilized layers. The response to possible interfering reagents such as nitrate and nitrite can be controlled through the multilayer design. By a predominant negatively charged outer surface, the response to these ions is markedly reduced.     

Synthesis of cubic zirconium and hafnium nitride having Th3P4 structure

High-pressure synthesis is a powerful method for the preparation of novel materials with high elastic moduli and hardness. Additionally, such materials may exhibit interesting thermal, optoelectronic, semiconductuing, magnetic or superconducting properties. Here, we report on the high-pressure synthesis of zirconium and hafnium nitrides with the stoichiometry M3N4, where M = Zr, Hf. Synthesis experiments were performed in a laser-heated diamond anvil cell at pressures up to 18 GPa and temperatures up to 3,000 K. We observed formation of cubic Zr3N4 and Hf3N4 (c-M3N4) with a Th3P4-structure, where M-cations are eightfold coordinated by N anions. The c-M3N4 phases are the first binary nitrides with such a high coordination number. Both compounds exhibit high bulk moduli around 250 GPa, which indicates high hardness. Moreover, the new nitrides, c-Zr3N4 and c-Hf3N4, may be the first members of a larger group of transition metal and/or lanthanide nitrides with interesting ferromagnetic or superconducting behaviour.     

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A Compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs

The valence-band electron (EVB) tunneling current in partially depleted silicon-on-insulator (SOI) MOSFETs increases as the gate oxide gets thinner and affects the dynamic behavior of devices and circuits. We present an engineering model of EVB tunneling current based on the surface-potential formulation. The new model is implemented in a SOI MOSFET compact model and is used to study the impact of EVB tunneling on circuit performance. Simulations of stacked logic gates show that the EVB tunneling current not only boosts circuit switching speed but also mitigates the history dependence of propagation delays