The copula: a tool for simulating speckle dynamics

Use of a copula for generating a sequence of correlated speckle patterns is introduced. The chief characteristic of this algorithm is that it generates a continuous speckle sequence with a specified evolution of the correlation and does so with just two arrays of random numbers. Thus, physically realistic temporally varying speckle patterns with proper first- and second-order statistics are easily realized. We illustrate use of the algorithm for generating sequences with prescribed Gaussian, exponential, and equal-interval correlations and demonstrate how correlation times can be specified independently. This approach to generating sequences of random realizations with prescribed correlations should prove useful in modeling such phenomena as dynamic light scatter, flow-dependent laser speckle contrast, and propagation of spatial coherence.     

The wabush mines fire

How could a five-million-dollar fire occur in a seemingly low hazard industry? The author discusses one such fire and examines the lessons learned from it. It takes careful study to determine if well-known fire protection principles are being violated.     

Layout-Specific Circuit Evaluation in 3-D Integrated Circuits

In this paper, we describe a comprehensive layout methodology for bonded three-dimensional integrated circuits (3D ICs). In bonded 3D integration technology, parts of a circuit are fabricated on different wafers, and then, the wafers are bonded with a glue layer of Cu or polymer based adhesive. Using our layout methodology, designers can layout such 3D circuits with necessary information on inter-wafer via/contact and orientation of each wafer embedded in the layout. We have implemented the layout methodology in 3DMagic. Availability of 3DMagic has led to interesting research with a wide range of layout-specific circuit evaluation, from performance comparison of 2D and 3D circuits to layout-specific reliability analyses in 3D circuits. Using 3DMagic, researchers have designed and simulated an 8-bit encryption processor mapped into 2D and 3D FPGA layouts. Moreover, the layout methodology is an essential element of our ongoing research for the framework of a novel Reliability Computer Aided Design tool, ERNI-3D.     

A shared-memory virtual channel queue for ATM broadband terminal adaptors

In order to take advantage of the low entry cost of the future public ATM (asynchronous transfer mode) network with shared facilities, it is highly desirable to interconnect different hosts and local area networks (LANs) to the ATM network. The interface between the computer hosts or LANs and the ATM network, commonly called a broadband terminal adaptor (BTA), provides the necessary format conversion for the data packets and the ATM cells. It is conceivable that multiple packets from different virtual channels are interleaved as they arrive at the receive-end BTA. The BTA must have a sufficiently large buffer, called a virtual channel queue (VCQ), to temporarily store the partially received packets. Once a complete packet has been received, it is forwarded to the host or LAN. Whenever the buffer fills with all incomplete packets, a packet must be discarded to make room for others. In this paper, we first study, through computer simulations, the buffer size requirement of a shared-memory VCQ for different numbers of virtual channels at various packet loss probabilities. We then present two different implementation architectures for the shared-memory VCQ, and compare their hardware complexity. The second architecture with linked-queue approach, adopted in our work, requires less buffer and has better scalability to accommodate a large number of virtual channels. Various possible error conditions, such as cell losses in the ATM network and the VCQ buffer overflow, are considered. Corresponding solutions are proposed and included in the VCQ designs.     

Ion beam-assisted planarization of chemically vapor deposited diamond thin films using electron cyclotron resonance plasma

The high inherent surface roughness of as-deposited polycrystalline diamond films has made effective planarization processing of these films essential for most industrial applications. We have investigated the efficacy of ion beam sources for planarization in an electron cyclotron resonance plasma system using both direct substrate biasing and an accelerating grid system. Rough polycrystalline diamond films were synthesized using hot filament chemical vapor deposition. Both the etching rates and the resultant surface roughnesses were found to decrease as the angle of incidence (relative to the substrate surface normal) of the ion beam was increased. In the case of direct biasing of the sample, acicular features were observed following processing at higher incident angles. The use of double ion-extraction grids in conjunction with concomitant sample rotation was found to produce more uniform planarization of the diamond films. The rate of surface roughness reduction was found to be nonlinear and decreased with time. For both ion extraction methods investigated, the average film roughness (R_a) was significantly reduced from 0.2 to 0.05–0.06 μm.     

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.