The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

石油系油浆与煤系闪蒸油的焦化性能——I．热解条件的影响

通过偏光显微镜观察了石油系油浆（LH）与煤系闪蒸油（SN）焦化后所得焦块的光学结构。结果表明，在较宽条件下两种原料单独焦化均得不到取向度高的流线型结构。将两种原料以一定比例混合后先热解丙焦化所得焦块的光学结构明显好于二者混合后直接焦化所得焦块的光学结构，其中LH和SN以3：2的重量比混合后在440℃、1MPa下热解3．5h然后再在530℃、1MPa下焦化8h所得焦块为具有较高取向度的流线型结构，适合于作为针状焦的起始原料。     

高纯锗探测器的快定时性能及其应用

为了将高纯锗（ＨＰＧｅ）探测器用于快定时的物理实验中，本实验研究厂影响高纯锗探测器定时谱仪时间性能的各种因素，找出了获得谱仪最小时间分辨的各种最佳参数。并建立了分辨时间为４．１９ｎｓ，能量分辨率为２０ｋｅＶ，微分非线性好于±２．０％，计效率可承受１２０×１０￣３ｓ￣（－１）的时间微分扰动角关联谱仪。利用此谱仪，以￣（２０４）Ｂｉ为探针核，研究了Ｂｉ系高温超导的微观机理，取得了较好的结果。     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Methylaluminoxane/haloalkane as initiator system for styrene polymerization

Summary Styrene polymerization was initiated by methylaluminoxane in the presence of haloalkane. The propagating species are shown by trapping experiments and electron paramagnetic resonance to be both radicals and cations.     

Rugorous analysis of planar waveguides with two-dimensionally periodic layer

Rigorous analysis of planar waveguides with two-dimensionally periodic (2DP) layer is presented. Characteristic solutions in periodic layer are exactly represented by a double Fourier series known as the Floquet solutions. The vector amplitudes of space harmonics are proved to be governed by five-term recurrence relation in the operator-vector form for sinusoidal modulation. A general transmission-line network representation of two-dimensionally periodic medium and multiport network representation of uniform-periodic-medium interface are introduced. Any layered structures cascading with periodic ones can be analyzed. Numerical results based on the established theory are also presented to illustrate characteristics of 2DP medium and structure.     

空间三重奏

设计的确是一项非常有趣的工作，就如同一位导演运用出色的技巧掌控有限的预算，为观众呈现令人回味的剧情，逼真的音效和异彩纷呈的视觉映像，这无疑是三个紧密相扣的环。     

Shear mode coupling and tilted grain growth of A1N thin films in BAW resonators.

Polycrystalline A1N thin films were deposited by RF reactive magnetron sputtering on Pt(111)/Ti electrode films. The substrates were tilted by an angle ranging from 40 degrees to 70 degrees with respect to the target normal. A low deposition temperature and a high sputter gas pressure were found ideal for tilted growth. The resulting grain tilt angle amounts to about half the substrate tilt angle. For coupling evaluation, 5 GHz solidly mounted resonator structures have been realized. The tilted grain A1N films exhibited a permittivity in the 9.5-10.5 range and loss tangent of 0.3%. Two shear modes as well as the longitudinal mode could be clearly identified. The coupling coefficient k2(eff) of the fundamental thickness shear mode (TS0) was found to be about 0.5%, which is compatible with a c-axis tilt of about 6 degrees.