Ultra-low temperature sensitive deep-well quantum cascade lasers (λ - 4.8 μm) via uptapering conduction band edge of injector region

A new design feature for deep-well quantum cascade (QC) lasers, in which the conduction band edge of the injector region is uptapered, results in virtual suppression of carrier leakage out of the active regions of 4.8 mm emitting devices. For heatsink temperatures in the 20?90°C range the characteristic temperature coefficients for threshold, T₀, and slope efficiency, T₁, reach values as high as 278 and 285 K, respectively, which are nearly twice the values for conventional QC lasers. At 20°C, the threshold current density for uncoated, 30 period, 3 mm-long devices is only ~1.8 kA/cm².     

Improvement of the cell performance in the ZnS/Cu(In,Ga)Se2 solar cells by the sputter deposition of a bilayer ZnO : Al film

ZnS is a candidate to replace CdS as the buffer layer in Cu(In,Ga)Se₂ (CIGS) solar cells for Cd‐free commercial product. However, the resistance of ZnS is too large, and the photoconductivity is too small. Therefore, the thickness of the ZnS should be as thin as possible. However, a CIGS solar cell with a very thin ZnS buffer layer is vulnerable to the sputtering power of the ZnO : Al window layer deposition because of plasma damage. To improve the efficiency of CIGS solar cells with a chemical‐bath‐deposited ZnS buffer layer, the effect of the plasma damage by the sputter deposition of the ZnO : Al window layer should be understood. We have found that the efficiency of a CIGS solar cell consistently decreases with an increase in the sputtering power for the ZnO : Al window layer deposition onto the ZnS buffer layer because of plasma damage. To protect the ZnS/CIGS interface, a bilayer ZnO : Al film was developed. It consists of a 50‐nm‐thick ZnO : Al plasma protection layer deposited at a sputtering power of 50 W and a 100‐nm‐thick ZnO : Al conducting layer deposited at a sputtering power of 200 W. The introduction of a 50‐nm‐thick ZnO : Al layer deposited at 50 W prevented plasma damage by sputtering, resulting in a high open‐circuit voltage, a large fill factor, and shunt resistance. The ZnS/CIGS solar cell with the bilayer ZnO : Al film yielded a cell efficiency of 14.68%. Therefore, the application of bilayer ZnO : Al film to the window layer is suitable for CIGS solar cells with a ZnS buffer layer. Copyright © 2012 John Wiley & Sons, Ltd.     

Effect of Oxygen Binding Energy on the Stability of Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistors

From a practical viewpoint, the topic of electrical stability in oxide thin‐film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium‐gallium‐zinc‐oxide (IGZO)‐TFTs have revealed that an IGZO‐TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X‐ray photoelectron spectroscopy analysis.     

DFR: an efficient directional flooding‐based routing protocol in underwater sensor networks

Unlike terrestrial sensor networks, underwater sensor networks (UWSNs) have salient features such as a long propagation delay, narrow bandwidth, and high packet loss over links. Hence, path setup‐based routing protocols proposed for terrestrial sensor networks are not applicable because a large latency of the path establishment is observed, and packet delivery is not reliable in UWSNs. Even though routing protocols such as VBF (vector based forwarding) and HHVBF (hop‐by‐hop VBF) were introduced for UWSNs, their performance in terms of reliability deteriorates at high packet loss. In this paper, we therefore propose a directional flooding‐based routing protocol, called DFR, in order to achieve reliable packet delivery. DFR performs a so‐called controlled flooding, where DFR changes the number of nodes which participate in forwarding a packet according to their link quality. When a forwarding node has poor link quality to its neighbor nodes geographically advancing toward the sink, DFR allows more nodes to participate in forwarding the packet. Otherwise, a few nodes are enough to forward the packet reliably. In addition, we identify two types of void problems which can occur during the controlled flooding and introduce their corresponding solutions. Our simulation study using ns‐2 simulator proves that DFR is more suitable for UWSNs, especially when links are prone to packet loss. Copyright © 2011 John Wiley & Sons, Ltd.     

Optical properties of Si0.8Ge0.2/Si multiple quantum wells

The optical property was studied on the Si_0.8Ge_0.2/Si strained multiple quantum well (MQW) structure grown using ultra-high vacuum chemical vapor deposition (UHV-CVD). Three peaks are observed in Raman spectrum, which are located at about 510, 410, and 300 cm⁻¹, corresponding to the vibration of Si–Si, Si–Ge, and Ge–Ge phonons, respectively. The photoluminescence (PL) spectrum originates from the radiative recombinations both from the Si substrate and the Si_0.8Ge_0.2/Si MQW. For Si_0.8Ge_0.2/Si strained MQW, the transition peaks related to the MQW region observed in the photocurrent (PC) spectrum were preliminarily assigned to electron–heavy hole (e–hh) and electron–light hole (e–lh) fundamental excitonic transitions.     

Resistive switching characteristics of ultra-thin TiOx

We investigated the resistive switching characteristics of Ir/TiO_x/TiN structure with 50 nm active area. We successfully formed ultra-thin (4 nm) TiO_x active layer using oxidation process of TiN BE, which was confirmed by X-ray Photoelectron Spectroscopy (XPS) depth profiling. Compared to large area device (50 μm), which shows only ohmic behavior, 250 and 50 nm devices show very stable resistive switching characteristics. Due to the formation and rupture of oxygen vacancies induced conductive filament at Ir and TiO_x interface, bipolar resistive switching was occurred. We obtained excellent switching endurance up to 10⁶ times with 100 ns pulse and negligible degradation of each resistance state at 85 °C up to 10⁴ s.     

Analysis of adaptive bandwidth allocation in wireless networks with multilevel degradable quality of service

A wireless/mobile network supporting multilevel quality of service (QoS) is considered. In such a network, users or applications can tolerate a certain degree of QoS degradation. Bandwidth allocation to users can, therefore, be adjusted dynamically according to the underlying network condition so as to increase bandwidth utilization and service provider's revenue. However, arbitrary QoS degradation may be unsatisfactory or unacceptable to the users, hence resulting in their subsequent defection. Instead of only focusing on bandwidth utilization or blocking/dropping probability, two new user-perceived QoS metrics, degradation ratio and upgrade/degrade frequency, are proposed. A Markov model is then provided to derive these QoS metrics. Using this model, we evaluate the effects of adaptive bandwidth allocation on user-perceived QoS and show the existence of trade offs between system performance and user-perceived QoS. We also show how to exploit adaptive bandwidth allocation to increase system utilization (for the system administrator) with controlled QoS degradation (for the users). By considering various mobility patterns, the simulation results are shown to match our analytical results, demonstrating the applicability of our analytical model to more general cases.     

Fine‐Grained FSMD Power Gating Considering Power Overhead

As a fine‐grained power gating method for achieving greater power savings, our approach takes advantage of the finite state machine with a datapath (FSMD) characteristic which shows sequential idleness among subcircuits. In an FSMD‐based power gating, while only an active subcircuit is expected to be turned on, more subcircuits should be activated due to the power overhead. To reduce the number of missed opportunities for power savings, we deactivated some of the turned‐on subcircuits by slowing the FSMD down and predicting its behavior. Our microprocessor experiments showed that the power savings are close to the upper bound.