The effect of surface roughness on the radiative properties ofpatterned silicon wafers

The radiative properties of patterned silicon wafers have a major impact on the two critical issues in rapid thermal processing (RTP), namely wafer temperature uniformity and wafer temperature measurement. The surface topography variation of the die area caused by patterning and the roughness of the wafer backside can have a significant effect on the radiative properties, but these effects are not well characterized. We report measurements of room temperature reflectance of a memory die, logic die, and various multilayered wafer backsides. The surface roughness of the die areas and wafer backsides is characterized using atomic force microscopy (AFM). These data are subsequently used to assess the effectiveness of thin film optics in providing approximations for the radiative properties of patterned wafers for RTP applications     

Effects of forced power transfer on high speed generator-loadsystems

A computer-aided method for investigating disturbances due to the forced paralleling of out of phase high speed salient pole AC generator systems feeding isolated loads is presented. The method is used to predict the system performance including the reverse voltage across the rotating bridge rectifier of the field exciter. This paper presents the fundamentals and the modeling approach used in the development of this method. In addition, the results of using this approach to compute the machine parameters under different load conditions including saturation effects due to magnetic material nonlinearities and space harmonics effects due to machine geometry and winding layouts are presented. The computed parameters are validated by comparison to test data. These parameters form the main data for simulating the forced paralleling of out of phase high speed salient pole AC generator systems feeding isolated loads. Further, the results of using this modeling approach in a case study to predict the system performance due to forced power transfer are summarized and are shown to be in good agreement with test data     

Dimensionless relations for zero-consumption electric arcs in a channel

Limiting dimensionless relations are presented for the cnaracteristics of an arc in a channel when the consumption of the plasma-generating gas approaches zero. An extensive comparison of calculation with experiment is carried out. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 70, No. 1, pp. 99–104, January–February, 1997.     

The "pedrada" ("coup-de-fouet") syndrome. A possibility to be considered in acute leg pain

The authors report the case of a woman admitted to hospital for minor trauma of the left hip and who presented major ST segment elevation on the second day suggesting an acute anterior wall myocardial infarction at the same time as a cerebrovascular accident. Complementary investigations and follow-up excluded the diagnosis of myocardial infarction with normalisation of the ECG on the 5th day. ECG changes during cerebrovascular accidents may be very variable ranging from extrasystoles to ST elevation mimicking myocardial infarction. They carry a poor prognosis with an increased risk of sudden death necessitating continuous ECG monitoring until the ECG reverts to normal. The cardiac involvement is not ischaemic but due to disease of the insular cortex of the brain which induces myocytolysis (centered around the intra-cardiac nerve endings) due to the sudden liberation of catecholamines. These lesions may be treated by propranolol or phentolamine.     

Issues in nonlinear stochastic grey box identification

Grey box identification refers to the practice of identifying dynamical systems in model structures exploiting partial prior information. This contribution reviews a method for stochastic grey box identification and surveys experiences and lessons of applying it to a number of industrial processes. Issues to be addressed include advantages and costs of introducing stochastics into the model, the question of what contribution must be expected from the model designer as opposed to what can be formalized in computer algorithms, and an outlook on future plans to resolve present shortcomings.     

Theoretical and Experimental Study of Water Transport in a Hollow Cylinder Applied to the Drying of Round Squid Mantle

Until now, attention has been focused solely in the drying of squid mantle from an experimental point of view, neglecting the transport phenomenon studies of water in squid muscle. This work studies the drying of squid mantle (Loligo brasiliensis), previously salted and smoked by liquid smoking (hickory extract), using a tubular dryer in closed cycle with a silicagel fixed bed in series. The mass transfer phenomenon during drying was studied, based on the Fick's second law, with the effective diffusivity supposed constant, which enabled an analytical solution to the problem. The drying curve calculated with the resulting equation was compared with experimental data. The model was applied to a hollow cylinder geometry (round squid mantle), with its internal surface isolated from the drying environment by a plastic film. The latter was given a tubular form and introduced inside the mantle cavity (impervious wall boundary condition).     

Structured genetic algorithm for robust H∞ controlsystems design

A structured genetic algorithm (SGA) approach is developed for robust controller design based on the concept of an H^∞ loop-shaping technique and the method of inequalities. Such an SGA is capable of simultaneously searching the orders and coefficients of the precompensator and postcompensator for the weighted plant. It is, therefore, not necessary to predefine the order of compensators as in usual practice. A multiple objective ranking approach is also incorporated so that the design criteria of extreme plants can be easily achieved. The effectiveness of such a technique is illustrated by a high-purity distillation column design example     

PLATOP: a novel planarized trench isolation and field oxideformation using poly-silicon

A novel isolation scheme named planarized trench isolation and field oxide formation using poly-silicon (PLATOP) Is described. PLATOP is applicable to high-performance submicron VLSI since it results in encroachment-free shallow trenches, and planarized field oxide. The process offers poly silicon-filled deep trenches. The process also relies on noncritical lithography and novel etch processes to planarize the deposited poly-silicon from the top of the active areas, and oxidation to consume the poly-silicon in the field regions. Electrical results are presented proving the viability of the isolation scheme