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991.
S.T.V. Parthasaradhi R. Derakhshani L.A. Hornak S.A.C. Schuckers 《IEEE transactions on systems, man and cybernetics. Part C, Applications and reviews》2005,35(3):335-343
Fingerprint scanners may be susceptible to spoofing using artificial materials, or in the worst case, dismembered fingers. An anti-spoofing method based on liveness detection has been developed for use in fingerprint scanners. This method quantifies a specific temporal perspiration pattern present in fingerprints acquired from live claimants. The enhanced perspiration detection algorithm presented here improves our previous work by including other fingerprint scanner technologies; using a larger, more diverse data set; and a shorter time window. Several classification methods were tested in order to separate live and spoof fingerprint images. The dataset included fingerprint images from 33 live subjects, 33 spoofs created with dental material and Play-Doh, and fourteen cadaver fingers. Each method had a different performance with respect to each scanner and time window. However, all the classifiers achieved approximately 90% classification rate for all scanners, using the reduced time window and the more comprehensive training and test sets. 相似文献
992.
The conditions for a rather fast increase in parametric thermomechanical oscillations have been revealed by using numerical solutions of some types of Hill's equation. It is shown that the occurrence of a real parametric resonance is essentially determined by the character of thermal modulations. It is hypothesized that the indicated trends are observed in oscillations of any physical nature.Stavropol State Pedagogical Institute, Stavropol. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 63, No. 3, pp. 294–298, September, 1992. 相似文献
993.
N. M. Shchetinin L. T. Kochelaeva V. A. Iveleva G. V. Kuz'mina N. S. Kireeva 《Glass and Ceramics》1991,48(1):5-7
Translated from Steklo i Keramika, No. 1, pp. 6–7, January, 1991. 相似文献
994.
Meijer G.A.L. Westerterp K.R. Verhoeven F.M.H. Koper H.B.M. ten Hoor F. 《IEEE transactions on bio-medical engineering》1991,38(3):221-229
Motion sensors may be applied for the assessment of physical activity. This paper reviews the evolution of these instruments from the mechanical pedometer to the electronic accelerometer. We conclude that for accurate assessment of physical activity under free living conditions the recently introduced accelerometer looks most promising, although little information was available regarding the reliability of these instruments. Subsequently, reliability of an accelerometer with a three-directional sensor was examined. Intrainstrument variation in a bench test was less than 8% during four measurements over a week. Interinstrument variation during treadmill experiments while subjects wore two accelerometers at the same time was on average 22% and was not improved after adjustment for differences found in the bench test. Reproducibility in the treadmill experiment was approximately 76, 85, and 95% at 3, 5, and 7 km/h, respectively. Bench testing revealed that the sensitivity of a piezoelectric element is prone to shifts, probably due to mechanical, electromagnetic, and/or temperature shock, which may be encountered during outdoor application. However, the relevance of the bench test in this study may be questioned, as results did not correspond with the findings in subjects. This needs further investigation. 相似文献
995.
An asymptotic analysis for current flow to small contacts in MOSFET source/drain regions is obtained. The formula for end resistance is compared with numerical simulations. It shows good agreement for contacts whose width is smaller than half the diffusion width 相似文献
996.
The aim of this letter is to derive the spectral density of decimated processes, and to establish their model when they are generated from ARMA processes. The optimal conditions of decimation are also discussed.<> 相似文献
997.
Raynaud C. Gautier J. Guegan G. Lerme M. Playez E. Dambrine G. 《Electron Device Letters, IEEE》1991,12(12):667-669
Polycide-gate silicon n-channel MOSFETs were fabricated on the basis of a standard 0.5-μm MOS technology and measured over the 1.5-26.5-GHz frequency range, in order to investigate the effects of channel-length reduction on device behavior at high frequency. Excellent microwave performances were obtained with a maximum operating frequency (f max) and a unity-current-gain frequency f t near 20 GHz for 0.5-μm-gate-length NMOS devices. An equivalent circuit for a MOSFET with its parasitic elements was extracted from measured S-parameter data. The influence of gate resistance, gate-to-drain overlap capacitance, substrate conductivity, and the transit-time effect between the source and drain on microwave characteristics was analyzed 相似文献
998.
P. G. Bannov G. E. Shumilova N. A. Voronina O. V. Yurkina T. F. Alekseenko 《Chemistry and Technology of Fuels and Oils》1992,28(3):178-179
Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 3, pp. 34–35, March, 1992. 相似文献
999.
1000.