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121.
1/f noise sources   总被引:2,自引:0,他引:2  
This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an α value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on α, α may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The α values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices  相似文献   
122.
The authors survey published results on the application of metal diffraction gratings as laser power or energy dividers when the laser beam is split into two approximately equal pans. The normal incidence of laser radiation on metal diffraction gratings of various profiles in the case of three propagating diffraction orders n=0, ±1 is discussed, along with the case of oblique incidence with only two propagating diffraction orders n=0 and n =–1.Translated from Izmeritel'naya Tekhnika, No. 2, pp. 22–26, February, 1994.  相似文献   
123.
A method is given for calculating the monitoring reliability parameters (MRP) for an engineering system with allowance for the drift in the measurement error of the means of measurement (MM). The approach is based on introducing a biased MM error distribution into the traditional formulas for the conditional probabilities of spurious and unobserved failure. The bias at the center of the distribution is determined by the systematic error at the given instant. An example is given to illustrate the performance in MRP calculation.Translated from Izmeritel'naya Tekhnika, No. 1, pp. 12–13, January, 1994.  相似文献   
124.
125.
The mass and charge identification of secondary particles with Z < 4 by a large CsI(T1) scintillation detector is performed using pulse shape analysis and time-of-flight methods. The dependence of the light output on E, A and Z is studied in the energy range of 1–20 MeV/A and special attention is paid to the integration time of the photomultiplier anode signal. It is found that the behaviour of the calibration curves strongly depends on the choice of the integration time interval.  相似文献   
126.
Heterostructure Acoustic Charge Transport (HACT) devices have been fabricated with a new nondestructive sense (NDS) electrode structure that provides for the recovery of base-band signals without the use of an integrating capacitor. This electrode structure provides an output signal comprising an RF carrier at the SAW frequency, amplitude modulated by the sampled input signal which has been delayed by a period proportional to the output electrodes distance from the input diode. The output of the NDS electrode structure is subsequently demodulated to provide the base-band signal  相似文献   
127.
ABSTRACT: The objective of this work was to observe the microstructure of feta cheese using confocal scanning laser microscopy. Low fat cheese and cheese containing capsule-producing cultures were made. The protein network was observed using the reflectance mode of the confocal microscope. Fat was stained by Nile red dye diluted with whey. More even distribution of fat with a larger number of smaller globules was observed in cheese made with noncapsule-forming culture compared to that made with the capsule-forming culture. Nonfat cheese had compact structure when made with noncapsule-forming culture which contrasted with the open structure observed in cheese made with the capsule-forming culture  相似文献   
128.
Mathematical modeling of viral replication dynamics, based on sequential measurements of levels of virion-associated RNA in plasma during antiretroviral treatment, has led to fundamental new insights into human immunodeficiency virus type 1 pathogenesis. We took advantage of the simian immunodeficiency virus (SIV)-infected macaque model to perform detailed measurements and mathematical modeling during primary infection and during treatment of established infection with the antiretroviral drug (R)-9-(2-phosphonylmethoxypropyl)adenine (PMPA). The calculated clearance half-life for productively infected cells during resolution of the peak viremia of primary infection was on the order of 1 day, with slightly shorter clearance half-lives calculated during PMPA treatment. Viral reproduction rates upon discontinuation of PMPA treatment after 2 weeks were approximately twofold greater than those obtained just prior to initiation of treatment in the same animals, likely reflecting accumulation of susceptible target cells during treatment. The basic reproductive ratio (R0) for the spread of SIV infection in vivo, which represents the number of productively infected cells derived from each productively infected cell at the beginning of infection, was also estimated. This parameter quantifies the extent to which antiviral therapy or vaccination must limit the initial spread of virus to prevent establishment of chronic disseminated infection. The results thus provide an important guide for efforts to develop vaccines against SIV and, by extension, human immunodeficiency virus.  相似文献   
129.
Phospholamban (PLN) was expressed in Escherichia coli as a protein fusion with glutathione S-transferase (GST). GST-PLN was mostly present in the insoluble protein fraction and accounted for approximately 50% of total insoluble protein. Attempts to suppress inclusion body formation or to use GST as an affinity-purification tag failed. A successful purification method is based on preparative SDS/PAGE and electrodialysis. From 1 g cells we typically purified 13.5 mg fusion protein with a PLN content of 2.8 mg. We genetically inserted an enterokinase (EK) protease site just in front of the PLN sequence and demonstrated the proteolytical liberation of PLN from the carrier protein. The approach described represents a substantial advancement in PLN expression and purification.  相似文献   
130.
This paper presents a high-speed, small-area circuit specifically designed to identify the levels in the read out operation of a flash multilevel memory. The circuit is based on the analog computation of the Euclidean distance between the current read out from a memory cell and the reference currents that represent the different logic levels. An experimental version of the circuit has been integrated in a standard double-metal 0.7-μm CMOS process with a die area of only 140×100 μm2. Operating under a 5-V power supply, this circuit identifies the read-out current of a memory cell, and associates it with the appropriate logic level in 9 ns  相似文献   
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